Resumes
Resumes
Gang Peng Phones & Addresses
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San Jose, CA
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Fremont, CA
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Milpitas, CA
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Santa Clara, CA
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Cambridge, MA
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Alameda, CA
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Sacramento, CA
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32 Mission Cielo Ave, Fremont, CA 94539
Work
Position:
Personal Care and Service Occupations
Education
Degree:
Associate degree or higher
Business Records
Name / Title
Company / Classification
Phones & Addresses
Manager
GARFIELD GP, LLC
20 Oak St, Wellesley, MA 02482
President
G. PENG STUDIO, INC
540 Memorial Dr #904, Cambridge, MA 02139
540 Memorial Dr #904, Cambridge, MA
540 Memorial Dr #904, Cambridge, MA
Publications
Us Patents
(Alga)Inpn High Brightness White Or Desired Color Led's
View pageUS Patent:
6897489, May 24, 2005
Filed:
Mar 10, 2004
Appl. No.:
10/797339
Inventors:
Hui Peng - Fremont CA, US
Gang Grant Peng - Fremont CA, US
Gang Grant Peng - Fremont CA, US
International Classification:
H01L029/221
H01L029/22
H01L029/24
H01L029/22
H01L029/24
US Classification:
257 96, 257 94, 257103
Abstract:
Group III-V compound semiconductor high brightness white or desire color light emitting diodes (LEDs) are disclosed. One of embodiments of the LEDs of the present invention comprises a first active layer, a second active layer, and a transition active layer sandwiched between the first and the second active layers, and is flip chip bonded on an electrically conductive submount for faster heat dissipation. Material systems for active layers of the LEDs of the present invention comprise (Al. sub. xGa. sub. 1-x). sub. yIn. sub. 1-yP. sub. z N. sub. 1-z. With combinations of different values of “x”, “y”, and “z”, the active layers and the transition active layer emit lights of different wavelengths. Appropriately adjusting wavelengths and intensities of emitted lights provides high brightness white or desire color.
P And N Contact Pad Layout Designs Of Gan Based Leds For Flip Chip Packaging
View pageUS Patent:
20050133806, Jun 23, 2005
Filed:
Dec 17, 2003
Appl. No.:
10/738791
Inventors:
Hui Peng - Fremont CA, US
Gang Peng - Fremont CA, US
Gang Peng - Fremont CA, US
International Classification:
H01L029/22
US Classification:
257099000
Abstract:
Based on the unique properties of the flip chip packaging process and GaN based LEDs with transparent substrates, new principles and methods for designing the layout of P contact pads and N contact pads are disclosed. The new designs of the present invention drastically increase the light extraction efficiency of LEDs by reducing the current crowding effect, increasing the uniformity of the spreading current in the active layer, and utilizing most of the available light emitting semiconductor material of the active layer. The present invention combined with the flip chip packaging process significantly improves the LEDs' heat dissipation.
Flip Chip Assemblies And Lamps Of High Power Gan Leds, Wafer Level Flip Chip Package Process, And Method Of Fabricating The Same
View pageUS Patent:
20050161779, Jul 28, 2005
Filed:
Jan 26, 2004
Appl. No.:
10/765346
Inventors:
Hui Peng - Fremont CA, US
Gang Peng - Fremont CA, US
Gang Peng - Fremont CA, US
International Classification:
H01L021/44
H01L023/02
H01L029/40
H01L023/02
H01L029/40
US Classification:
257678000, 438106000, 438108000, 257778000
Abstract:
The present invention discloses new flip chip assemblies and lamps for high power semiconductor chips or devices including GaN LEDs and a new wafer level flip chip packaging process for cost effectively manufacturing the same. The advantages of the new flip chip assemblies, lamps, and the wafer level flip chip package process are: (1) the fabricating process is simpler; (2) no need for expensive flip chip equipments; (3) the throughput is higher; (4) eliminating lattice mismatch between the substrate and the epitaxial layer by removing the substrate; (5) better thermal dissipation; (6) reduced current crowding effect and higher current density; (7) higher light extraction efficiency; (8) eliminating the totally internal reflection; and (9) eliminating the Fresnel reflection at the dome-air interface.
High Power And High Brightness White Led Assemblies And Method For Mass Production Of The Same
View pageUS Patent:
20050189551, Sep 1, 2005
Filed:
Feb 26, 2004
Appl. No.:
10/787816
Inventors:
Hui Peng - Fremont CA, US
Gang Peng - Fremont CA, US
Gang Peng - Fremont CA, US
International Classification:
H01L033/00
US Classification:
257094000
Abstract:
High power and high brightness light emitting diode (LED) assemblies emitting white light are disclosed. The present invention also discloses methods for cost effective mass production of the high power and high brightness LED assemblies with high throughput.
Electron Spectroscopic Metrology System
View pageUS Patent:
20060043291, Mar 2, 2006
Filed:
Aug 26, 2004
Appl. No.:
10/927410
Inventors:
Gang Peng - Fremont CA, US
International Classification:
G01N 23/20
H01J 37/28
H01J 37/28
US Classification:
250310000, 250307000
Abstract:
The present invention discloses a new electron spectroscopic metrology system using an electron beam to measure the periodic feature on a substrate. The present invention provides a measurement system for the geometry parameters of the periodic feature which is only a few repeating small elements in the measurement area. The present invention has the following advantages: (1) capable of measuring a small feature of an array of lines (line width less than a couple of ten nanometers); (2) capable of measuring a small feature of an array of via holes; (3) capable of measuring an isolated feature, with a line and patch ratio less than 1:10; (4) capable of measuring a small area, less than twenty five square micrometers; (5) no need to input detailed knowledge about the feature and its film stack; (6) simple theoretical model to derive the geometry parameters. The total simplicity of the present invention will enhance the electron spectroscopic metrology system's overall performance and productivity.
Solar And Thermal Energy To Electricity Conversion
View pageUS Patent:
20100043867, Feb 25, 2010
Filed:
Aug 19, 2008
Appl. No.:
12/229152
Inventors:
Gang Grant Peng - Fremont CA, US
International Classification:
H01L 31/042
US Classification:
136248
Abstract:
The present invention discloses a new apparatus and method for converting solar energy or thermal energy to electricity, requiring simple design and production. The present invention will apply the work from the solar or thermal energy to the variable capacitors that convert into electric energy. The output energy from the present invention will be ready for grid connection.
Apparatus And Method For Enhancing Plasma Etch
View pageUS Patent:
20100055920, Mar 4, 2010
Filed:
Sep 2, 2008
Appl. No.:
12/231446
Inventors:
Gang Grant Peng - Fremont CA, US
International Classification:
H01L 21/3065
US Classification:
438710, 15634543, 257E21218
Abstract:
The present invention discloses a new apparatus and method to enhance the plasma etch rate, etch selectivity and etch uniformity. The present invention will apply sonic waves to the work during plasma etch process. The sonic waves will enhance the plasma etch rate. The applied sonic waves can be of a mixture of multiple frequencies at the same time or at a different time. Applying different sonic frequency for etching different material will further amplify the etch selectivity. Sonic waves with multiple frequencies, especially with some lower frequency components, will further improve the etch uniformity over a large area.
Method Of Sputtering A Carbon Protective Film On A Magnetic Disk With High Sp.sup.3 Content
View pageUS Patent:
60867302, Jul 11, 2000
Filed:
Apr 22, 1999
Appl. No.:
9/298107
Inventors:
Wen Hong Liu - San Jose CA
Gang Peng - Milpitas CA
Tsutomu Yamashita - San Jose CA
Tu Chen - Monte Sereno CA
Gang Peng - Milpitas CA
Tsutomu Yamashita - San Jose CA
Tu Chen - Monte Sereno CA
Assignee:
Komag, Incorporated - San Jose CA
International Classification:
C23C 1434
US Classification:
20419216
Abstract:
Sputtering method for producing amorphous hydrogenated carbon thin films with high sp. sup. 3 content. By sputtering the carbon with a pulsed DC power supply having high voltage peaks, a carbon film with remarkably high sp. sup. 3 bonding fraction can be obtained. Previously, carbon films with a very high sp. sup. 3 fraction film with content as high (e. g. as 80%) could only be produced by methods such as filtered cathodic arc deposition or chemical vapor deposition methods (CVD) such as plasma-enhanced chemical vapor deposition (PE-CVD) and ion-beam deposition operating at some narrowly defined range of deposition conditions. It is very advantageous to use sputtering to create a high sp. sup. 3 content film, since sputtering is more manufacturable and has higher productivity compared to CVD or ion-beam deposition methods. The resultant carbon film has excellent durability and corrosion resistance capability down to very low thickness.