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Gang Peng

from Forest Hills, NY
Age ~65
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Also known as:
Peng Gang
Related to:
Peng Gang
Connected to:
A PengAdam Peng, 63Ai L Peng, 65Aidong Peng, 48Aimee J Peng, 34Althea L Peng, 48Andrea J Peng, 53Annette A Peng, 54Anthony W Peng, 43Bei Peng, 41

Gang Peng Phones & Addresses

  • Forest Hills, NY
  • San Francisco, CA
  • Lafayette, LA
  • Monterey Park, CA
  • 254 Broad St, San Francisco, CA 94112

Work

Position: Administrative Support Occupations, Including Clerical Occupations

Education

Degree: Bachelor's degree or higher

Resumes

Resumes

Gang Peng Photo 1

Software Engineer

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Location:
San Francisco, CA
Industry:
Computer Software
Work:
Facebook
Software Engineer
Vip.com 唯品会
Chief Architect
Microsoft Sep 2012 - Jan 2017
Principal Development Manager
Pplive May 2011 - Sep 2012
Senior Director
Microsoft Mar 2010 - Jun 2011
Software Design Engineer Lead
Education:
Syracuse University 1999 - 2001
Master of Science, Masters Chinese Academy of Sciences 1996 - 1999
Master of Science, Masters Xi'an Jiaotong University 1991 - 1996
Bachelor of Engineering, Bachelors Jingzhou High School 1990 - 1991
Skills:
Distributed Systems
.Net
Clr
Computer Science
Windows
Systems Programming
C#
Web Development
Java
Hadoop
Scalability
Software Engineering
Wpf
Agile Methodologies
Languages:
Mandarin
Certifications:
Coursera
Stanford University
Edx
Coursera Course Certificates, License U2Hbdzzc3Ky3
Coursera Course Certificates, License Jbe76Jrgamkx
Machine Learning
Linear and Integer Programming
Statistical Learning
Introduction To Computer Networking
Edx Honor Code Certificate For Foundations of Data Analysis
Mining Massive Datasets
Edx Honor Code Certificate For Introduction To Big Data With Apache Spark
Edx Honor Code Certificate For Scalable Machine Learning
Edx Honor Code Certificate For Calculus 1A: Differentiation
Neural Networks For Machine Learning
Edx Honor Code Certificate For Introduction To Functional Programming
Edx Honor Code Certificate For Calculus 1B: Integration
Edx Honor Code Certificate For Calculus 1C: Coordinate Systems and Infinite Series
Edx Honor Code Certificate For the Analytics Edge
Probabilistic Graphical Models 1: Representation (With Honors)
Gang Peng Photo 2

It Architect

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Location:
Palo Alto, CA
Industry:
Computer Software
Work:
VMware since Jan 2010
Senior Linux Systems Administrator
SRI International 2005 - 2009
Senior Systems Administrator
Hewlett-Packard 1998 - 2002
Systems Support Engineer
Education:
Marquette University 2003 - 2005
Master of Science, Computing
Skills:
Vmware
Virtualization
Linux
Vmware Esx
Cloud Computing
Apache
Perl
San
Tcp/Ip
Enterprise Architecture
Data Center
Akamai
Nginx
Nfs
Web Services
Networking
Https
Ssl Certificates
Smtp
Languages:
English
Mandarin
Gang Peng Photo 3

Gang Peng

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Business Records

Name / Title
Company / Classification
Phones & Addresses
Gang Peng
President
MACSPORTS INC
Whol Sporting/Recreational Goods
2083 Puddingstone Dr, La Verne, CA 91750
2053 Puddingstone Dr, La Verne, CA 91750
(909) 392-8282
Gang Peng
President
YESDATA USA, INC
8780 E Vly Blvd, Rosemead, CA 91770

Publications

Us Patents

(Alga)Inpn High Brightness White Or Desired Color Led's

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US Patent:
6897489, May 24, 2005
Filed:
Mar 10, 2004
Appl. No.:
10/797339
Inventors:
Hui Peng - Fremont CA, US
Gang Grant Peng - Fremont CA, US
International Classification:
H01L029/221
H01L029/22
H01L029/24
US Classification:
257 96, 257 94, 257103
Abstract:
Group III-V compound semiconductor high brightness white or desire color light emitting diodes (LEDs) are disclosed. One of embodiments of the LEDs of the present invention comprises a first active layer, a second active layer, and a transition active layer sandwiched between the first and the second active layers, and is flip chip bonded on an electrically conductive submount for faster heat dissipation. Material systems for active layers of the LEDs of the present invention comprise (Al. sub. xGa. sub. 1-x). sub. yIn. sub. 1-yP. sub. z N. sub. 1-z. With combinations of different values of “x”, “y”, and “z”, the active layers and the transition active layer emit lights of different wavelengths. Appropriately adjusting wavelengths and intensities of emitted lights provides high brightness white or desire color.

P And N Contact Pad Layout Designs Of Gan Based Leds For Flip Chip Packaging

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US Patent:
20050133806, Jun 23, 2005
Filed:
Dec 17, 2003
Appl. No.:
10/738791
Inventors:
Hui Peng - Fremont CA, US
Gang Peng - Fremont CA, US
International Classification:
H01L029/22
US Classification:
257099000
Abstract:
Based on the unique properties of the flip chip packaging process and GaN based LEDs with transparent substrates, new principles and methods for designing the layout of P contact pads and N contact pads are disclosed. The new designs of the present invention drastically increase the light extraction efficiency of LEDs by reducing the current crowding effect, increasing the uniformity of the spreading current in the active layer, and utilizing most of the available light emitting semiconductor material of the active layer. The present invention combined with the flip chip packaging process significantly improves the LEDs' heat dissipation.

Flip Chip Assemblies And Lamps Of High Power Gan Leds, Wafer Level Flip Chip Package Process, And Method Of Fabricating The Same

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US Patent:
20050161779, Jul 28, 2005
Filed:
Jan 26, 2004
Appl. No.:
10/765346
Inventors:
Hui Peng - Fremont CA, US
Gang Peng - Fremont CA, US
International Classification:
H01L021/44
H01L023/02
H01L029/40
US Classification:
257678000, 438106000, 438108000, 257778000
Abstract:
The present invention discloses new flip chip assemblies and lamps for high power semiconductor chips or devices including GaN LEDs and a new wafer level flip chip packaging process for cost effectively manufacturing the same. The advantages of the new flip chip assemblies, lamps, and the wafer level flip chip package process are: (1) the fabricating process is simpler; (2) no need for expensive flip chip equipments; (3) the throughput is higher; (4) eliminating lattice mismatch between the substrate and the epitaxial layer by removing the substrate; (5) better thermal dissipation; (6) reduced current crowding effect and higher current density; (7) higher light extraction efficiency; (8) eliminating the totally internal reflection; and (9) eliminating the Fresnel reflection at the dome-air interface.

High Power And High Brightness White Led Assemblies And Method For Mass Production Of The Same

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US Patent:
20050189551, Sep 1, 2005
Filed:
Feb 26, 2004
Appl. No.:
10/787816
Inventors:
Hui Peng - Fremont CA, US
Gang Peng - Fremont CA, US
International Classification:
H01L033/00
US Classification:
257094000
Abstract:
High power and high brightness light emitting diode (LED) assemblies emitting white light are disclosed. The present invention also discloses methods for cost effective mass production of the high power and high brightness LED assemblies with high throughput.

Electron Spectroscopic Metrology System

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US Patent:
20060043291, Mar 2, 2006
Filed:
Aug 26, 2004
Appl. No.:
10/927410
Inventors:
Gang Peng - Fremont CA, US
International Classification:
G01N 23/20
H01J 37/28
US Classification:
250310000, 250307000
Abstract:
The present invention discloses a new electron spectroscopic metrology system using an electron beam to measure the periodic feature on a substrate. The present invention provides a measurement system for the geometry parameters of the periodic feature which is only a few repeating small elements in the measurement area. The present invention has the following advantages: (1) capable of measuring a small feature of an array of lines (line width less than a couple of ten nanometers); (2) capable of measuring a small feature of an array of via holes; (3) capable of measuring an isolated feature, with a line and patch ratio less than 1:10; (4) capable of measuring a small area, less than twenty five square micrometers; (5) no need to input detailed knowledge about the feature and its film stack; (6) simple theoretical model to derive the geometry parameters. The total simplicity of the present invention will enhance the electron spectroscopic metrology system's overall performance and productivity.

Solar And Thermal Energy To Electricity Conversion

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US Patent:
20100043867, Feb 25, 2010
Filed:
Aug 19, 2008
Appl. No.:
12/229152
Inventors:
Gang Grant Peng - Fremont CA, US
International Classification:
H01L 31/042
US Classification:
136248
Abstract:
The present invention discloses a new apparatus and method for converting solar energy or thermal energy to electricity, requiring simple design and production. The present invention will apply the work from the solar or thermal energy to the variable capacitors that convert into electric energy. The output energy from the present invention will be ready for grid connection.

Apparatus And Method For Enhancing Plasma Etch

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US Patent:
20100055920, Mar 4, 2010
Filed:
Sep 2, 2008
Appl. No.:
12/231446
Inventors:
Gang Grant Peng - Fremont CA, US
International Classification:
H01L 21/3065
US Classification:
438710, 15634543, 257E21218
Abstract:
The present invention discloses a new apparatus and method to enhance the plasma etch rate, etch selectivity and etch uniformity. The present invention will apply sonic waves to the work during plasma etch process. The sonic waves will enhance the plasma etch rate. The applied sonic waves can be of a mixture of multiple frequencies at the same time or at a different time. Applying different sonic frequency for etching different material will further amplify the etch selectivity. Sonic waves with multiple frequencies, especially with some lower frequency components, will further improve the etch uniformity over a large area.

Aluminum Plating At Low Temperature With High Efficiency

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US Patent:
20180230616, Aug 16, 2018
Filed:
Jan 30, 2018
Appl. No.:
15/884006
Inventors:
- Santa Clara CA, US
Gang PENG - Fremont CA, US
Robert MIKKOLA - Kalispell MT, US
International Classification:
C25D 3/44
C25D 5/00
Abstract:
The present disclosure generally relates to methods of electro-depositing a crystalline layer of pure aluminum onto the surface of an aluminum alloy article. The methods may include positioning the article and an electrode in an electro-deposition solution. The electro-deposition solution includes one or more of an aluminum halide, an organic chloride salt, an aluminum reducing agent, a solvent such as a nitrile compound, and an alkali metal halide. The solution is blanketed with an inert gas, agitated, and a crystalline layer of aluminum is deposited on the article by applying a bias voltage to the article and the electrode.
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Gang Peng from Forest Hills, NY, age ~65 Get Report