Friedrich H Doerbeck

20110290173, Dec 1, 2011

Feb 23, 2009

12/589534

David C. Spencer - Heath TX, US
Jimmie D. Walter - Anna TX, US
Friedrich H. Doerbeck - Dallas TX, US

C30B 15/30
C30B 15/16

117 28, 117218

Computer controlled quality control methods for manufacturing high purity polycrystalline granules are introduced. Polycrystalline silicon granules are sampled and converted into single crystal specimen in computer controlled system, eliminating the need of human operator in controlling the processing parameters. Single crystal silicon test samples, then characterized by FTIR and other standard analysis, are therefore more representative of the starting granular silicon.

20130112134, May 9, 2013

Aug 31, 2012

13/601847

David C. Spencer - Heath TX, US
Jimmie D. Walter - Anna TX, US
Friedrich H. Doerbeck - Dallas TX, US

GIGA INDUSTRIES, INC. - Garland TX

C30B 15/20
C30B 15/08
C30B 15/14

117 13, 117216

Computer controlled quality control methods for manufacturing high purity polycrystalline granules are introduced. Polycrystalline silicon granules are sampled and converted into single crystal specimen in computer controlled system, eliminating the need of human operator in controlling the processing parameters. Single crystal silicon test samples, then characterized by FTIR and other standard analysis, are therefore more representative of the starting granular silicon.

46549609, Apr 7, 1987

Dec 13, 1985

6/808901

William V. McLevige - Plano TX
Walter M. Duncan - Dallas TX
Friedrich H. Doerbeck - Dallas TX

Texas Instruments Incorporated - Dallas TX

H01L 21265
H01L 2948

29576B

Bipolar transistors and other electronic structures are fabricated on a gallium arsenide (GaAs) substrate to form an integrated circuit device. This process is made possible by development of an ion implant technique which uses an acceptor material to create a P type region, boron or protons to create insulating regions, and silicon or selenium to create an N type region. The process avoids the difficult problems encountered in diffusion methods, and, due to the precise control available with the ion implant method, makes possible the fabrication of IC quality transistors consistently over a substrate. This same control enables the fabrication of integrated circuits with improved device packing density and reduced parasitic parameters.

45730644, Feb 25, 1986

Nov 2, 1981

6/317367

William V. McLevige - Plano TX
Walter M. Duncan - Dallas TX
Friedrich H. Doerbeck - Dallas TX

Texas Instruments Incorporated - Dallas TX

H01L 2948
H01L 29161
H01L 2702
H01L 2348

357 16

Bipolar transistors and other electronic structures are fabricated on a gallium arsenide (GaAs) substrate to form an integrated circuit device. This integrated circuit device is made possible by development of an ion implant technique which uses an acceptor material to create a P type region, boron or protons to create insulating regions, and silicon or selenium to create an N type region. The use of an ion implant technique avoids the difficult problems encountered in diffusion methods, and, due to the precise control available with ion implantation, makes possible the fabrication of IC quality transistors consistently over a substrate. This same control enables the fabrication of integrated circuits with improved device packing density and reduced parasitic parameters.