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Florin Zavaliche

from San Ramon, CA
Age ~55
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Also known as:
Florin Zavalick, Zavaliche Florin, Florin E
Phone and address:
4 Rosemary Ln, San Ramon, CA 94583
Related to:
Delia Zavaliche, 53
Connected to:
James K Zavalianos, 62Maria Zavalia, 70Martin E Zavalia, 61Paul J Zavalick, 66Gina M Zavalis, 54Hector Zavalla, 82Brandi L Zavalydriga, 37Thomas J Zavalydriga, 82Daniel M Zavalza, 63Myrna Zavalza, 50

Florin Zavaliche Phones & Addresses

  • 4 Rosemary Ln, San Ramon, CA 94583
  • Fremont, CA
  • 804 Megan Dr, Cranberry Twp, PA 16066 (724) 553-5103
  • Cranberry Township, PA
  • 411 Cornell Ave, Albany, CA 94706 (510) 528-5232
  • College Park, MD
  • Pittsburgh, PA
  • Dublin, CA

Work

Company: Seagate technology Sep 2010 Position: Senior staff research engineer

Education

School / High School: University of California, Berkeley 2004 to 2006 Specialities: Physics

Skills

Thin Films • Afm • Characterization • Materials Science • Physics • Failure Analysis • Magnetics • Metrology • Semiconductors • Scanning Probe Microscopy • Design of Experiments • Nanotechnology • Powder X Ray Diffraction • R&D • Scanning Electron Microscopy • Microscopy • Sputtering • Nanomaterials • Pvd • Image Processing • Data Analysis • Experimentation • Depositions • Solid State Physics • Xrd • Research and Development • Efficiency Improvements • Task Prioritization and Expediting • Instructional Trainings • Team Development and Training • New Product Introduction • Lean Methodologies • Leading Cross Functional Teams

Languages

English

Industries

Computer Hardware

Resumes

Resumes

Florin Zavaliche Photo 1

Senior Staff Research Engineer

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Location:
4 Rosemary Ln, San Ramon, CA 94583
Industry:
Computer Hardware
Work:
Seagate Technology
Senior Staff Research Engineer
Seagate Technology Mar 2009 - Aug 2010
Research Staff Engineer
Seagate Technology May 2006 - Feb 2009
Research Staff Member
Education:
University of California, Berkeley 2004 - 2006
University of Maryland 2003 - 2004
Associates, Physics Université De Montréal 2002 - 2003
The Martin Luther University of Halle - Wittenberg 1998 - 2002
Doctorates, Doctor of Philosophy, Physics University of Virginia 1997 - 1998
Technische Universität Chemnitz 1996 - 1997
University of Bucharest 1989 - 1994
Master of Science, Masters, Bachelors, Bachelor of Science, Physics
Skills:
Thin Films
Afm
Characterization
Materials Science
Physics
Failure Analysis
Magnetics
Metrology
Semiconductors
Scanning Probe Microscopy
Design of Experiments
Nanotechnology
Powder X Ray Diffraction
R&D
Scanning Electron Microscopy
Microscopy
Sputtering
Nanomaterials
Pvd
Image Processing
Data Analysis
Experimentation
Depositions
Solid State Physics
Xrd
Research and Development
Efficiency Improvements
Task Prioritization and Expediting
Instructional Trainings
Team Development and Training
New Product Introduction
Lean Methodologies
Leading Cross Functional Teams
Languages:
English

Publications

Us Patents

Multilayer Ferroelectric Data Storage System With Regenerative Read

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US Patent:
7821808, Oct 26, 2010
Filed:
Jan 30, 2009
Appl. No.:
12/363062
Inventors:
Tong Zhao - Cranberry Township PA, US
Martin Gerard Forrester - Murrysville PA, US
Florin Zavaliche - Cranberry Township PA, US
Joachim Ahner - Pittsburgh PA, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11C 11/22
US Classification:
365145, 365117, 365173, 365171, 257295, 257752
Abstract:
A data storage system comprises first and second storage layers, a reader and a writer. The first storage layer has a first coercive potential and a first polarization. The second storage layer has a second coercive potential that is less than the first coercive potential, and a second polarization that is coupled to the first polarization. The writer performs a write operation in which a write potential is imposed across the first and second storage layers, such that the first coercive potential is exceeded across the first storage layer and the second coercive potential is exceeded across the second storage layer. The reader performs a read operation in which a read potential is imposed across the first and second storage layers, such that the second coercive potential is exceeded across the second storage layer and the first coercive potential is not exceeded across the first storage layer.

Non-Destructive Readback For Ferroelectric Material

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US Patent:
7876661, Jan 25, 2011
Filed:
Oct 2, 2007
Appl. No.:
11/865878
Inventors:
Tong Zhao - Pittsburgh PA, US
Martin G. Forrester - Murrysville PA, US
Florin Zavaliche - Pittsburgh PA, US
Dierk Guenter Bolten - Pittsburgh PA, US
Andreas Karl Roelofs - Eden Prairie MN, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11B 7/00
US Classification:
369126, 977947
Abstract:
An apparatus that provides for non-destructive readback of a ferroelectric material. The apparatus can include a ferroelectric layer with a scannable surface wherein the ferroelectric layer has a compensation charge adjacent the scannable surface. The apparatus also can include an electrode adjacent the scannable surface to sense the compensation charge. A related method is also disclosed.

Non-Destructive Read Back For Ferroelectric Data Storage Device

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US Patent:
7916513, Mar 29, 2011
Filed:
Nov 5, 2008
Appl. No.:
12/265418
Inventors:
Shan Hu - Pittsburgh PA, US
Tong Zhao - Cranberry Township PA, US
Florin Zavaliche - Cranberry Township PA, US
Joachim Ahner - Pittsburgh PA, US
Stephen John Wrazien - Cranberry Township PA, US
Martin Gerard Forrester - Murrysville PA, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11C 11/22
G11C 11/24
US Classification:
365145, 365149
Abstract:
A data storage device comprising a ferroelectric layer, a perovskite structure, and at least one sensor, where the perovskite structure has a polarity discontinuity configured to generate capacitance voltages in the perovskite structure based on polarization charges of the ferroelectric material, and where the at least one sensor is configured to read the capacitance voltages from the perovskite structure.

Reconfigurable Electric Circuitry And Method Of Making Same

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US Patent:
8227701, Jul 24, 2012
Filed:
Jan 26, 2009
Appl. No.:
12/359386
Inventors:
Stephen John Wrazien - Cranberry Township PA, US
Florin Zavaliche - Cranberry Township PA, US
Joachim Walter Ahner - Pittsburgh PA, US
Tong Zhao - Cranberry Township PA, US
Martin Gerard Forrester - Murrysville PA, US
Shan Hu - Allison Park PA, US
Assignee:
Seagate Technology LLC - Cupertino CA
International Classification:
H05K 1/03
US Classification:
174256, 174250
Abstract:
A reconfigurable electric circuit includes first and second crystalline material layers positioned adjacent to each other and forming a first interface, and a first ferroelectric layer positioned adjacent to the first crystalline material layer and having ferroelectric domains applying an electric field to regions of the first interface to induce a quasi two-dimensional electron gas in the regions, wherein at least one of the regions forms a gate and at least one of the regions forms a channel.

Apparatus Having Electric Circuitry And Method Of Making Same

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US Patent:
20080286587, Nov 20, 2008
Filed:
May 16, 2007
Appl. No.:
11/749368
Inventors:
Joachim Walter Ahner - Pittsburgh PA, US
Florin Zavaliche - Pittsburgh PA, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
B32B 15/04
B05D 5/12
B32B 9/04
US Classification:
428469, 427 961, 4284111
Abstract:
An apparatus includes a first crystalline material layer, a second crystalline material layer positioned adjacent to the first crystalline material layer to form an electron gas, a first interface, and a first ferroelectric layer having ferroelectric domains that apply an electric field to portions of the first interface. A method of making the apparatus is also provided.

Ferroelectric Polarization Pattern With Differing Feedback Signals

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US Patent:
20090086615, Apr 2, 2009
Filed:
Oct 2, 2007
Appl. No.:
11/865806
Inventors:
Florin Zavaliche - Pittsburgh PA, US
Philip George Pitcher - Cranberry Township PA, US
Tong Zhao - Pittsburgh PA, US
Dierk Guenter Bolten - Pittsburgh PA, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11B 3/70
US Classification:
369283
Abstract:
A ferroelectric polarization pattern with differing feedback signals. An apparatus including a ferroelectric layer and a polarization pattern configured in the ferroelectric layer to represent position data. The polarization pattern has a first switchable polarization state domain and a second switchable polarization state domain that are both switchable by an applied signal. The first switchable polarization state domain has a first feedback signal in response to the applied signal that is different than a second feedback signal of the second switchable polarization state domain at the applied signal.

Ferroelectric Material With Polarization Pattern

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US Patent:
20090092805, Apr 9, 2009
Filed:
Oct 3, 2007
Appl. No.:
11/866443
Inventors:
Tong Zhao - Pittsburgh PA, US
Andreas Karl Roelofs - Eden Prairie MN, US
Florin Zavaliche - Pittsburgh PA, US
Philip George Pitcher - Cranberry Township PA, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
B32B 5/14
C23C 14/48
C23C 14/28
US Classification:
428212, 427595, 427523
Abstract:
An apparatus includes a ferroelectric layer and a polarization pattern configured in the ferroelectric layer to represent position data. The polarization pattern has a switchable polarization state domain and an unswitchable polarization state domain. A method includes providing a ferroelectric layer and establishing a polarization pattern in the ferroelectric layer to represent position data.

Multiferroic Storage Medium

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US Patent:
20100188773, Jul 29, 2010
Filed:
Jan 29, 2009
Appl. No.:
12/361762
Inventors:
Florin Zavaliche - Cranberry Township PA, US
Tong Zhao - Cranberry Township PA, US
Philip George Pitcher - Shakopee MN, US
Michael Allen Seigler - Pittsburgh PA, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
G11B 5/33
G11C 11/22
US Classification:
360110, 365145, G9B 5104
Abstract:
A data storage medium that includes a multiferroic thin film and ferromagnetic storage domains formed in the multiferroic thin film. The multiferroic thin film may be formed of at least one of BiFeO, or any other ferroelectric and antiferromagnetic material. The ferromagnetic storage domains may be formed in the multiferroic thin film by an ion implantation process. A data storage system that incorporates the data storage medium is also provided.
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Florin Zavaliche from San Ramon, CA, age ~55 Get Report