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Fen J Chen

from Hicksville, NY
Age ~74
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Also known as:
Fen J Chew, Jian Chen Fen, Chew Fen
Related to:
Cheung L Tam, 68Jian Chen FenZhong Chen, 49Tian K Chen, 60Neng Xiang Chen, 62Chen Mou, 46Mou Chen, 46
Connected to:
Abre G Chen, 65Adele Chen, 52Adeline K Chen, 39Ai M Chen, 60Ai C Chen, 78Aiping Chen, 63Alen Y Chen, 68Alma Chen, 29Amanda Chen, 44Amanda T Chen, 62

Fen Chen Phones & Addresses

  • Hicksville, NY
  • 2502 Cropsey Ave, Brooklyn, NY 11214
  • 2502 Cropsey Ave APT 1, Brooklyn, NY 11214

Business Records

Name / Title
Company / Classification
Phones & Addresses
Fen H. Chen
Principal
Allpurpose Insurance Agency
Insurance Agent/Broker
1849 State, Edison, NJ 08817
Fen Chen
Principal
Chen's Kitchen
Eating Place
6224 N 9 Ave, Pensacola, FL 32504
136 Bowery, New York, NY 10013
(850) 475-8070
Fen Chen Chen
IMPERIAL FEAST CORP
35 Madison St APT 2R, New York, NY 10038
721 Columbus Ave, New York, NY 10025
Fen Teng Chen
BLUE COLOR HAIR SALON INC
4920 8 Ave, Brooklyn, NY 11220
Fen Xi Chen
NEW CHINA ELIM, INC
Restaurants
724 Nereid Ave, Bronx, NY 10466
726 Nereid Ave, Bronx, NY 10466
(718) 324-6666
Fen Chen
President
CHINA 1 RESTAURANT INC
5123 65 St, Woodside, NY 11377
Fen Chen
President
TAK LUCK RESTAURANT INC
Eating Place
746 Myrtle Ave, Brooklyn, NY 11205
(718) 624-3837
Fen Chen
Principal
EXPRESS CHINESE & JAPANESE, INC
Eating Place
370 8 Ave, New York, NY 10001
(212) 564-2079

Publications

Us Patents

3D Via Capacitor With A Floating Conductive Plate For Improved Reliability

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US Patent:
20130161791, Jun 27, 2013
Filed:
Feb 21, 2013
Appl. No.:
13/772493
Inventors:
International Business Machines Corporation - Armonk NY, US
Fen Chen - Williston VT, US
Baozhen Li - South Burlington VT, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 49/02
US Classification:
257532
Abstract:
The present invention provides a 3D via capacitor and a method for forming the same. The capacitor includes an insulating layer on a substrate. The insulating layer has a via having sidewalls and a bottom. A first electrode overlies the sidewalls and at least a portion of the bottom of the via. A first high-k dielectric material layer overlies the first electrode. A first conductive plate is over the first high-k dielectric material layer. A second high-k dielectric material layer overlies the first conductive plate and leaves a remaining portion of the via unfilled. A second electrode is formed in the remaining portion of the via. The first conductive plate is substantially parallel to the first electrode and is not in contact with the first and second electrodes. An array of such 3D via capacitors is also provided.
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Fen J Chen from Hicksville, NY, age ~74 Get Report