Resumes
Resumes
Faezeh Gholami Phones & Addresses
-
30 Daniel Ct, Ridgewood, NJ 07450
-
Mahwah, NJ
-
San Diego, CA
-
La Jolla, CA
-
Carlsbad, CA
-
Guttenberg, NJ
Publications
Us Patents
Electrochromic Optical Switch
View pageUS Patent:
20230024042, Jan 26, 2023
Filed:
Jul 20, 2021
Appl. No.:
17/380698
Inventors:
- Armonk NY, US
Faezeh Gholami - Ridgewood NJ, US
Michael Cracraft - Poughkeepsie NY, US
Vahe Minassian - Hopewell Junction NY, US
Faezeh Gholami - Ridgewood NJ, US
Michael Cracraft - Poughkeepsie NY, US
Vahe Minassian - Hopewell Junction NY, US
International Classification:
G02F 1/31
C09K 9/00
C01G 41/02
C09K 9/00
C01G 41/02
Abstract:
A device, a method, and an article of manufacture are disclosed. The device includes a first optical fiber, a second optical fiber, an electrochromic component positioned between tips of the optical fibers, and a voltage source connected to the electrochromic component. The method includes providing an electrochromic component, providing optical fibers and a voltage source, and assembling an optical switch that includes the electrochromic component, the optical fibers, and the voltage source. The voltage source is connected to the electrochromic component. The article of manufacture includes an optical switch with a voltage source connected to an electrochromic component positioned between optical fiber tips.
Method And System For A Vertical Junction High-Speed Phase Modulator
View pageUS Patent:
20190113822, Apr 18, 2019
Filed:
Nov 30, 2018
Appl. No.:
16/206749
Inventors:
- Carlsbad CA, US
Subal Sahni - La Jolla CA, US
Yannick De Koninck - Mechelen, BE
Gianlorenzo Masini - Carlsbad CA, US
Faezeh Gholami - Guttenberg NJ, US
Subal Sahni - La Jolla CA, US
Yannick De Koninck - Mechelen, BE
Gianlorenzo Masini - Carlsbad CA, US
Faezeh Gholami - Guttenberg NJ, US
International Classification:
G02F 1/225
G02F 1/025
G02F 1/025
Abstract:
Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.
Method And System For A Vertical Junction High-Speed Phase Modulator
View pageUS Patent:
20190113823, Apr 18, 2019
Filed:
Nov 30, 2018
Appl. No.:
16/206755
Inventors:
- Carlsbad CA, US
Subal Sahni - La Jolla CA, US
Yannick De Koninck - Mechelen, BE
Gianlorenzo Masini - Carlsbad CA, US
Faezeh Gholami - Guttenberg NJ, US
Subal Sahni - La Jolla CA, US
Yannick De Koninck - Mechelen, BE
Gianlorenzo Masini - Carlsbad CA, US
Faezeh Gholami - Guttenberg NJ, US
International Classification:
G02F 1/225
G02F 1/025
G02F 1/025
Abstract:
Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor waveguide including a slab section, a rib section extending above the slab section, raised ridges extending above the slab section on both sides of the rib section, and a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or fully p-doped in each cross-section along the semiconductor waveguide. Electrical contact may be made to the doped material via contacts on the raised ridges, and electrical contact may be made to the rib section via periodically arranged sections of the semiconductor waveguide. A cross-section of both the rib section and the slab section in the periodically arranged sections may be mostly n-doped with an undoped portion or mostly p-doped with an undoped portion.
Method And System For A Vertical Junction High-Speed Phase Modulator
View pageUS Patent:
20180059504, Mar 1, 2018
Filed:
Sep 1, 2017
Appl. No.:
15/694236
Inventors:
- Carlsbad CA, US
Subal Sahni - La Jolla CA, US
Yannick De Koninck - Mechelen, BE
Gianlorenzo Masini - Carlsbad CA, US
Faezeh Gholami - Guttenberg NJ, US
Subal Sahni - La Jolla CA, US
Yannick De Koninck - Mechelen, BE
Gianlorenzo Masini - Carlsbad CA, US
Faezeh Gholami - Guttenberg NJ, US
International Classification:
G02F 1/225
Abstract:
Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.