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Erika Vote Phones & Addresses

  • Bennett, CO
  • Denver, CO
  • Pasadena, CA
  • Fresno, CA
  • San Clemente, CA

Publications

Us Patents

Uncooled Tunneling Infrared Sensor

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US Patent:
52987485, Mar 29, 1994
Filed:
Jun 15, 1992
Appl. No.:
7/898682
Inventors:
Thomas W. Kenny - Glendale CA
William J. Kaiser - West Covina CA
Judith A. Podosek - Arcadia CA
Erika C. Vote - Golden CO
Howard K. Rockstad - Thousand Oaks CA
Joseph K. Reynolds - Pasadena CA
Assignee:
California Institute of Technology - Pasadena CA
International Classification:
G01J 500
H01J 3700
US Classification:
2503381
Abstract:
An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane which would otherwise change deflection depending upon incident infrared radiation. The resulting infrared sensor will meet or exceed the performance of all other broadband, uncooled, infrared sensors and can be miniaturized to pixel dimensions smaller than 100. mu. m. The technology is readily implemented as a small-format linear array suitable for commercial and spacecraft applications.

Uncooled Tunneling Infrared Sensor

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US Patent:
54364523, Jul 25, 1995
Filed:
Jun 21, 1993
Appl. No.:
8/079507
Inventors:
Thomas W. Kenny - Glendale CA
William J. Kaiser - West Covina CA
Judith A. Podosek - Arcadia CA
Erika C. Vote - Pasadena CA
Richard E. Muller - Sunland CA
Paul D. Maker - Arcadia CA
Assignee:
California Institute of Technology - Pasadena CA
International Classification:
G01J 500
H01J 3700
US Classification:
2503381
Abstract:
An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane. The resulting infrared sensor can be miniaturized to pixel dimensions smaller than 100. mu. m. An alternative embodiment is implemented using a corrugated membrane to permit large deflection without complicated clamping and high deflection voltages. The alternative embodiment also employs a pinhole aperture in a membrane to accommodate environmental temperature variation and a sealed chamber to eliminate environmental contamination of the tunneling electrodes and undesireable accoustic coupling to the sensor.
Erika C Vote from Bennett, CODeceased Get Report