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Erik Solyst Phones & Addresses

  • 6720 Landerwood Ln, San Jose, CA 95120 (425) 337-6671
  • Incline Village, NV
  • 6720 Landerwood Ln, San Jose, CA 95120

Work

Company: Solyst Position: Retired

Education

Degree: Graduate or professional degree

Emails

Industries

E-Learning

Resumes

Resumes

Erik Solyst Photo 1

Erik Solyst

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Location:
San Jose, CA
Industry:
E-Learning
Work:
Solyst
Retired

Publications

Us Patents

Charge Electrode For Ink Jet

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US Patent:
39757412, Aug 17, 1976
Filed:
Jul 23, 1975
Appl. No.:
5/598482
Inventors:
Erik R. Solyst - San Jose CA
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G01D 1518
US Classification:
346 75
Abstract:
A charge electrode structure for electrostatic ink jet systems comprises a series of dielectric laminates having planar electrode laminates therebetween and openings therethrough for passage of the ink jet stream approximately normal to the plane of the electrodes. The electrodes for the same stream are electrically interconnected and energizeble to form a charging field similar to that of a tubular charge electrode parallel to the stream.

Method For Producing Nozzle Arrays For Ink Jet Printers

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US Patent:
41579356, Jun 12, 1979
Filed:
Dec 23, 1977
Appl. No.:
5/863827
Inventors:
Erik R. Solyst - San Jose CA
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21308
US Classification:
156644
Abstract:
Nozzle arrays for ink jet recording are produced by preferred chemical etching of a substrate material which frequently has a non-uniform thickness. The preferred substrate is a monocrystalline silicon wafer and the 100 plane surface of the wafer is coated with etchant masking material and the resist coated wafer is held in close physical contact with a base member. A suitable mask member which defines a nozzle array pattern is spaced a predetermined distance from the base member and is positioned parallel to the base member. The wafer is then exposed through the mask by a suitable light source arranged at a suitable angle while the wafer is simultaneously rotated about an axis perpendicular to the wafer. The wafer is then exposed to a chemical anisotropic etching agent to produce a uniform array of nozzles in the wafer wherein the lateral walls of the nozzles are substantially in the "111" plane of the wafer. The masking material is then stripped from the wafer.
Erik R Solyst from San Jose, CA, age ~98 Get Report