Erik A Edelberg

7204934, Apr 17, 2007

Oct 31, 2001

10/002676

Linda Braly - Albany CA, US
Vahid Vahedi - Albany CA, US
Erik Edelberg - San Francisco CA, US
Alan Miller - Moraga CA, US

Lam Research Corporation - Fremont CA

H01L 21/66
G01L 21/30

216 59, 216 38, 216 60, 438692, 438 9, 438710

A method for processing recess etch operations in substrates is provided including forming a hard mask over the substrate and etching a trench in the substrate using the hard mask, and forming a dielectric layer over the hard mask and in the trench, where the dielectric layer lines the trench. A conductive material is then applied over the dielectric layer such that a blanket of the conductive material lies over the hard mask and fills the trench, and the conductive material is etched to substantially planarize the conductive material. The etching of the conductive material triggers an endpoint just before all of the conductive material is removed from over the dielectric layer that overlies the bard mask. The conductive material is recess etched to remove the conductive material over the dielectric layer that overlies the hard mask and removes at least part of the conductive material from within the trench.

7397555, Jul 8, 2008

Dec 17, 2004

11/016022

Aleksander Owczarz - San Jose CA, US
Jaroslaw W. Winniczek - Daly City CA, US
Luai Nasser - Union City CA, US
Alan Schoepp - Ben Lomond CA, US
Fred C. Redeker - Alameda CA, US
Erik Edelberg - Castro Valley CA, US

Lam Research Corporation - Fremont CA

G01N 21/00

3562373, 3562374

A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle β relative to the first surface of the substrate. A method for inspecting a substrate is also included.

7542134, Jun 2, 2009

Jun 2, 2008

12/131909

Aleksander Owczarz - San Jose CA, US
Jaroslaw W. Winniczek - Daly City CA, US
Luai Nasser - Union City CA, US
Alan Schoepp - Ben Lomond CA, US
Fred C. Redeker - Alameda CA, US
Erik Edelberg - Castro Valley CA, US

Lam Research Corporation - Fremont CA

G01N 21/00

3562373, 3562374

A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle β relative to the first surface of the substrate. A method for inspecting a substrate is also included.

7547636, Jun 16, 2009

Feb 5, 2007

11/671342

Erik A. Edelberg - Castro Valley CA, US

Lam Research Corporation - Fremont CA

H01L 21/302

438714, 438710, 438723, 438724, 438725, 216 67, 216 68, 216 72, 216 74, 216 81

A method for selectively etching an ultra high aspect ratio feature dielectric layer through a carbon based mask in an etch chamber is provided. A flow of an etch gas is provided, comprising a fluorocarbon containing molecule and an oxygen containing molecule to the etch chamber. A pulsed bias RF signal is provided. An energizing RF signal is provided to transform the etch gas to a plasma.

7682986, Mar 23, 2010

Feb 5, 2007

11/671340

Erik A. Edelberg - Castro Valley CA, US

Lam Research Corporation - Fremont CA

H01L 21/302

438723, 438706, 438725, 216 72

A method for etching an ultra high aspect ratio feature in a dielectric layer through a carbon based mask is provided. The dielectric layer is selectively etched with respect to the carbon based mask, wherein the selective etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask. The selective etch is stopped. The fluorocarbon polymer is selectively removed with respect to the carbon based mask, so that the carbon based mask remains, using a trimming. The selectively removing the fluorocarbon polymer is stopped. The dielectric layer is again selectively etched with respect to the carbon based mask, wherein the second selectively etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask.

7977390, Jul 12, 2011

Aug 22, 2006

11/508725

Bing Ji - Pleasanton CA, US
Erik A. Edelberg - Castro Valley CA, US
Takumi Yanagawa - Fremont CA, US
Zhisong Huang - Fremont CA, US
Lumin Li - Santa Clara CA, US

Lam Research Corporation - Fremont CA

B44C 1/22
H01L 21/302

516 67, 216 37, 216 41, 438694, 438706, 438710, 438723, 438725

A method for etching features in a dielectric layer is provided. A mask is formed over the dielectric layer. A protective silicon-containing coating is formed on exposed surfaces of the mask. The features are etched through the mask and protective silicon-containing coating. The features may be partially etched before the protective silicon-containing coating is formed.

8298336, Oct 30, 2012

Apr 1, 2005

11/096820

Ing-Yann Wang - Moraga CA, US
Jaroslaw W. Winniczek - Daly City CA, US
David J. Cooperberg - Mount Kisco NY, US
Erik A. Edelberg - Castro Valley CA, US
Robert P. Chebi - San Carlos CA, US

Lam Research Corporation - Fremont CA

C23C 16/455
C23C 16/458
C23F 1/00
H01L 21/306
C23C 16/06
C23C 16/22

118715, 15634533, 15634534, 15634551, 118728

A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.

8425682, Apr 23, 2013

Sep 21, 2012

13/624558

Jaroslaw W. Winniczek - Daly City CA, US
David J. Cooperberg - Mount Kisco NY, US
Erik A. Edelberg - Castro Valley CA, US
Robert P. Chebi - San Carlos CA, US

Lam Research Corporation - Fremont CA

C23C 16/455
C23C 16/458
C23F 1/00
H01L 21/306
C23C 16/06
C23C 16/22

118715, 15634533, 15634534, 15634551, 118728

A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.