Resumes
Resumes
Enrico Napoletano Phones & Addresses
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21 Kensington Rd, Madison, NJ 07940 (973) 410-1291
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Morristown, NJ
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1305 Radford Rd, Wilmington, DE 19803
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Flushing, NY
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Weehawken, NJ
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Newark, DE
Work
Position:
Professional/Technical
Education
Degree:
Associate degree or higher
Emails
Publications
Us Patents
Case For Semiconductor Circuit Of A Surge Protector
View pageUS Patent:
6239987, May 29, 2001
Filed:
Mar 28, 1994
Appl. No.:
8/218802
Inventors:
Richard Sheng-Tong Shyr - Taichung, TW
Enrico F. Napoletano - Flushing NY
Marie Guillot - St. James NY
Enrico F. Napoletano - Flushing NY
Marie Guillot - St. James NY
Assignee:
General Semiconductor, Inc. - Melville NY
International Classification:
H02H 104
US Classification:
361820
Abstract:
First and second thermoplastic case parts house a surge protector semiconductor subassembly having a plurality of components. The first and second thermoplastic case parts are substantially identical, and each case part has a semiconductor subassembly receiving recess therein. The first and second thermoplastic case parts have corresponding projections and recesses so that the first and second thermoplastic case parts may be snapped together to form a hollow case encapsulating the semiconductor subassembly. The hollow case includes spring means integral with the hollow case for applying force on the semiconductor subassembly to retain the components of the semiconductor subassembly together in the event that the case is subjected to high temperature due to a high current surge.
Surge Protector Semiconductor Subassembly For 3-Lead Transistor Aotline Package
View pageUS Patent:
55127843, Apr 30, 1996
Filed:
Apr 19, 1994
Appl. No.:
8/229555
Inventors:
Robert L. Fried - Plainview NY
Enrico F. Napoletano - Flushing NY
Marie Guillot - St. James NY
Enrico F. Napoletano - Flushing NY
Marie Guillot - St. James NY
Assignee:
Jerrold Communications, General Instrument Corporation - Hatboro PA
International Classification:
HO1L 29861
HO1L 2334
HO1L 23495
HO1L 2334
HO1L 23495
US Classification:
257724
Abstract:
The subassembly of the present invention includes three pairs of aligned steering diodes and a single thyristor situated between spaced apart conductive heat sink plates. The subassembly is configured to fit into a standard 3-lead transistor outline package by arrangement of the semiconductors and shaping of the conductive plates. In one embodiment, the plates are square, and the components are arranged such that the diode pairs and thyristor are proximate the corners of the plates. In another embodiment, a "T" arrangement is utilized for the components which are situated between "H" shaped plates.