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Enrico E Magni

from Pleasanton, CA
Age ~63
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Also known as:
Enrico Cristina Magni, Enrico C Magni, Enrico Cristina, Magni Enrico Cristina
Phone and address:
3144 Cranwood Ct, Pleasanton, CA 94588
(925) 426-8604
Related to:
Cristina Magni, 63Alexander P Magni, 29Maria C Martelloni, 62Kevin A Magni, 31
Connected to:
Andrew P Magni, 61Evan T Magni, 33Patricia A Magni, 66Peter R Magni, 75Timothy S Magni, 54Irene J Magnie, 40Alessandro E Magnifico, 64Carl J Magnifico, 81Cynthia A Magnifico, 67Frank Magnifico, 56

Enrico Magni Phones & Addresses

  • 3144 Cranwood Ct, Pleasanton, CA 94588 (925) 426-8604
  • 6641 Amber Ln, Pleasanton, CA 94566 (925) 417-0694
  • 5728 Owens Dr, Pleasanton, CA 94588
  • 2401 Dundee Cir, Tahoe Paradise, CA 96150 (530) 577-0235
  • South Lake Tahoe, CA
  • 719 Ciderbrook Rd, Hockessin, DE 19707 (302) 239-6799
  • Bear, DE
  • El Cerrito, CA
  • Alameda, CA

Work

Position: Professional/Technical

Publications

Us Patents

Methods For Removing Black Silicon And Black Silicon Carbide From Surfaces Of Silicon And Silicon Carbide Electrodes For Plasma Processing Apparatuses

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US Patent:
7291286, Nov 6, 2007
Filed:
Dec 23, 2004
Appl. No.:
11/019464
Inventors:
Enrico Magni - Pleasanton CA, US
Michael Kelly - Pleasanton CA, US
Robert Hefty - Mountain View CA, US
Michelle Lupan - Danville CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B44C 1/22
US Classification:
216 67, 156345, 134 11, 134 12, 134 13, 216 79
Abstract:
Methods for removing black silicon or black silicon carbide from a plasma-exposed surface of an upper electrode of a plasma processing chamber are provided. The methods include forming a plasma using a gas composition containing a fluorine-containing gas, and removing the black silicon or black silicon carbide from the surface with the plasma. The methods can also remove black silicon or black silicon carbide from surfaces of the components in the chamber in addition to the upper electrode.

Methods And Apparatus For In Situ Substrate Temperature Monitoring By Electromagnetic Radiation Emission

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US Patent:
7341673, Mar 11, 2008
Filed:
Aug 12, 2003
Appl. No.:
10/640350
Inventors:
Enrico Magni - Pleasanton CA, US
Assignee:
LAM Research Corporation - Fremont CA
International Classification:
H01L 21/302
US Classification:
216 59, 216 67, 438 14, 438710, 427 8, 15634527
Abstract:
A method in a plasma processing system of determining the temperature of a substrate. The method includes providing a substrate comprising a set of materials, wherein the substrate being configured to absorb electromagnetic radiation comprising a first set of electromagnetic frequencies, to convert the first set of electromagnetic frequencies to a set of thermal vibrations, and to transmit a second set of electromagnetic frequencies. The method also includes positioning the substrate on a substrate support structure, wherein the substrate support structure includes a chuck; flowing an etchant gas mixture into a plasma reactor of the plasma processing system; and striking the etchant gas mixture to create a plasma, wherein the plasma comprises the first set of electromagnetic frequencies. The method further includes processing the substrate with the plasma thereby generating the second set of electromagnetic frequencies; calculating a magnitude of the second set of electromagnetic frequencies; and converting the magnitude to a temperature value.

Methods For Silicon Electrode Assembly Etch Rate And Etch Uniformity Recovery

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US Patent:
7442114, Oct 28, 2008
Filed:
Dec 23, 2004
Appl. No.:
11/019729
Inventors:
Tuochuan Huang - Saratoga CA, US
Daxing Ren - Pleasanton CA, US
Hong Shih - Walnut CA, US
Catherine Zhou - Fremont CA, US
Chun Yan - San Jose CA, US
Enrico Magni - Pleasanton CA, US
Bi Ming Yen - Fremont CA, US
Jerome Hubacek - Fremont CA, US
Dae J. Lim - Fremont CA, US
Dougyong Sung - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B24B 1/00
US Classification:
451 57, 451 37, 451 28
Abstract:
Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.

Method And Apparatus For Physical Confinement Of A Liquid Meniscus Over A Semiconductor Wafer

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US Patent:
8580045, Nov 12, 2013
Filed:
Sep 22, 2011
Appl. No.:
13/240657
Inventors:
Enrico Magni - Pleasanton CA, US
Eric Lenz - Pleasanton CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B08B 3/04
US Classification:
134 21, 134 15, 134 34
Abstract:
Systems, methods and apparatus for making a chemical head including forming a first return chamber in the chemical head, forming a second return chamber in the chemical head, forming a plurality of first return conduits from a head surface to the first return chamber, forming a plurality of second return conduits from a head surface to the second return chamber and wherein at least one of the first return conduits and the second return conduits being formed at a first angle relative to the head surface, the first angle being greater than about 20 degrees to a meniscus plane normal.

Methods For Protecting Silicon Or Silicon Carbide Electrode Surfaces From Morphological Modification During Plasma Etch Processing

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US Patent:
20060091104, May 4, 2006
Filed:
Oct 29, 2004
Appl. No.:
10/975946
Inventors:
Kenji Takeshita - Fremont CA, US
Tsuyoshi Aso - Tokyo, JP
Seiji Kawaguchi - San Jose CA, US
Thomas McClard - Fremont CA, US
Wan-Lin Chen - Sunnyvale CA, US
Enrico Magni - Pleasanton CA, US
Michael Kelly - Pleasanton CA, US
Michelle Lupan - Danville CA, US
Robert Hefty - Mountain View CA, US
International Classification:
B44C 1/22
H01L 21/311
B08B 6/00
US Classification:
216037000, 216067000, 438905000, 438694000, 134001100
Abstract:
Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.

Methods For Verifying Gas Flow Rates From A Gas Supply System Into A Plasma Processing Chamber

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US Patent:
20070021935, Jan 25, 2007
Filed:
Jul 12, 2005
Appl. No.:
11/178323
Inventors:
Dean Larson - Pleasanton CA, US
Robert Hefty - Mountain View CA, US
James Tietz - Fremont CA, US
Williams Kennedy - Fremont CA, US
Eric Lenz - Pleasanton CA, US
William Denty - San Jose CA, US
Enrico Magni - Pleasanton CA, US
International Classification:
G01F 25/00
US Classification:
702100000, 239071000
Abstract:
Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such as during plasma processing operations. Gas supply systems are also disclosed.

Sealed Elastomer Bonded Si Electrodes And The Like For Reduced Particle Contamination In Dielectric Etch

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US Patent:
20070187038, Aug 16, 2007
Filed:
Feb 13, 2006
Appl. No.:
11/352307
Inventors:
Daxing Ren - Pleasanton CA, US
Enrico Magni - Pleasanton CA, US
Eric Lenz - Pleasanton CA, US
Ren Zhou - Fremont CA, US
International Classification:
B31B 1/60
C23F 1/00
US Classification:
156345430, 156060000
Abstract:
An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing having a backing member having a bonding surface, an inner electrode having a lower surface on one side and a bonding surface on the other side, and an outer electrode having a lower surface on one side and a bonding surface on the other side. At least one of the electrodes has a flange, which extends underneath at least a portion of the lower surface of the other electrode.

Methods And Apparatus For In Situ Substrate Temperature Monitoring By Electromagnetic Radiation Emission

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US Patent:
20090025876, Jan 29, 2009
Filed:
Jan 15, 2008
Appl. No.:
12/014656
Inventors:
Enrico Magni - Pleasanton CA, US
International Classification:
C23F 1/08
US Classification:
15634527
Abstract:
A method in a plasma processing system of determining the temperature of a substrate. The method includes providing a substrate comprising a set of materials, wherein the substrate being configured to absorb electromagnetic radiation comprising a first set of electromagnetic frequencies, to convert the first set of electromagnetic frequencies to a set of thermal vibrations, and to transmit a second set of electromagnetic frequencies. The method also includes positioning the substrate on a substrate support structure, wherein the substrate support structure includes a chuck; flowing an etchant gas mixture into a plasma reactor of the plasma processing system; and striking the etchant gas mixture to create a plasma, wherein the plasma comprises the first set of electromagnetic frequencies. The method further includes processing the substrate with the plasma thereby generating the second set of electromagnetic frequencies; calculating a magnitude of the second set of electromagnetic frequencies; and converting the magnitude to a temperature value.
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Enrico E Magni from Pleasanton, CA, age ~63 Get Report