Emmett R Hughlett

8181688, May 22, 2012

Apr 15, 2010

12/760640

Hale Johnson - Jericho VT, US
Patrick Gorun - Burlington VT, US
Emmett Hughlett - Waterbury VT, US
James Hermanowski - Waterbury VT, US
Matthew Stiles - Montpelier VT, US
Michael Kuhnle - Hyde Park VT, US

Suss Microtec Lithography, GmbH - Garching

B32B 38/10

156752, 156711, 156712, 156714, 156718, 156753, 156763, 156930, 156941, 438458

An improved apparatus for temporary wafer bonding includes a temporary bonder cluster and a debonder cluster. The temporary bonder cluster includes temporary bonder modules that perform electronic wafer bonding processes including adhesive layer bonding, combination of an adhesive layer with a release layer bonding and a combination of a UV-light curable adhesive layer with a laser absorbing release layer bonding. The debonder cluster includes a thermal slide debonder, a mechanical debonder and a radiation debonder.

20080188072, Aug 7, 2008

Feb 4, 2008

12/025686

Hale Johnson - Jericho VT, US
G. Gerard Gormley - Worcester VT, US
Emmett Hughlett - Waterbury VT, US

SUSS MICROTEC AG - GARCHING/MUNICH

H01L 21/44
C23C 14/00

438615, 118 50, 118500, 257E21476

An improved apparatus for semiconductor wafer bumping utilizes the injection molded solder process and is designed for high volume manufacturing. The apparatus includes equipment for filling patterned mold cavities on a mold structure with solder, equipment for positioning and aligning a patterned surface of a semiconductor structure directly opposite to the solder filled patterned mold cavities of the mold structure, a fixture tool for holding and transferring the aligned mold and semiconductor structures together, and equipment for receiving the fixture tool and transferring the solder from the aligned patterned mold cavities to the aligned patterned semiconductor first surface. The solder transfer equipment include a wafer heater stack configured to heat the semiconductor structure and a mold heater stack configured to heat the mold structure to a process temperature slightly above the solder's melting point. The fixture tool with the aligned mold and semiconductor structures is inserted between the wafer heater stack and the mold heater stack. A deposition chamber is formed between the wafer heater stack and the mold heater stack by sealing the wafer heater stack and the mold heater stack against the frame.

20100089978, Apr 15, 2010

Jun 10, 2009

12/481692

EMMETT HUGHLETT - WATERBURY VT, US
THOMAS PRICE - Jerico VT, US
HALE JOHNSON - JERICHO VT, US

SUSS MICROTEC INC - Waterbury Center VT

B23K 20/24

228116, 228 31

An improved apparatus for bonding semiconductor structures includes equipment for treating a first surface of a first semiconductor structure and a first surface of a second semiconductor structure with formic acid, equipment for positioning the first surface of the first semiconductor structure directly opposite and in contact with the first surface of the second semiconductor structure and equipment for forming a bond interface between the treated first surfaces of the first and second semiconductor structures by pressing the first and second semiconductor structures together. The equipment for treating the surfaces of the first and second semiconductor structures with formic acid includes a sealed tank filled partially with liquid formic acid and partially with formic acid vapor. Opening an inlet valve connects the tank to a nitrogen gas source and allows nitrogen gas to flow through the tank. Opening an outlet valve allows a mixture of formic acid vapor with nitrogen gas to flow out of the tank. The mixture is used for treating the surfaces of the first and second semiconductor structures.

20110010908, Jan 20, 2011

Apr 15, 2010

12/760973

GREGORY GEORGE - COLCHESTER VT, US
HALE JOHNSON - JERICHO VT, US
PATRICK GORUN - BURLINGTON VT, US
EMMETT HUGHLETT - WATERBURY VT, US
JAMES HERMANOWSKI - WATERBURY VT, US
MATTHEW STILES - MONTPELIER VT, US

SUSS MICROTEC INC - Waterbury VT

B23P 19/00

294262, 29762

A debonder apparatus for debonding two via an adhesive layer temporary bonded wafers includes a top chuck assembly, a bottom chuck assembly, a static gantry supporting the top chuck assembly, an X-axis carriage drive supporting the bottom chuck assembly, and an X-axis drive control. The top chuck assembly includes a heater and a wafer holder. The X-axis drive control drives horizontally the bottom chuck assembly from a loading zone to a process zone under the top chuck assembly and from the process zone back to the loading zone. A wafer pair comprising a carrier wafer bonded to a device wafer via an adhesive layer is placed upon the bottom chuck assembly at the loading zone oriented so that the unbonded surface of the device wafer is in contact with the bottom assembly and is carried by the X-axis carriage drive to the process zone under the top chuck assembly and the unbonded surface of the carrier wafer is placed in contact with the top chuck assembly. The X-axis drive control initiates horizontal motion of the X-axis carriage drive along the X-axis while heat is applied to the carrier wafer via the heater and while the carrier wafer is held by the top chuck assembly via the wafer holder and thereby causes the device wafer to separate and slide away from the carrier wafer.

20150083342, Mar 26, 2015

Dec 1, 2014

14/556298

GREGORY GEORGE - COLCHESTER VT, US
HALE JOHNSON - JERICHO VT, US
PATRICK GORUN - BURLINGTON VT, US
EMMETT HUGHLETT - WATERBURY VT, US
JAMES HERMANOWSKI - WATERBURY VT, US
MATTHEW STILES - MONTPELIER VT, US

SUSS MICROTEC LITHOGRAPHY, GMBH - GARCHING

H01L 21/683
B32B 43/00
H01L 21/673

156711

A method for debonding two temporary bonded wafers, includes providing a debonder comprising a top chuck assembly, a bottom chuck assembly, a static gantry supporting the top chuck assembly, an X-axis carriage drive supporting the bottom chuck assembly and an X-axis drive control configured to drive horizontally the X-axis carriage drive and the bottom chuck assembly from a loading zone to a process zone under the top chuck assembly and from the process zone back to the loading zone. Next, loading a wafer pair comprising a carrier wafer bonded to a device wafer via an adhesive layer upon the bottom chuck assembly at the loading zone oriented so that the unbonded surface of the device wafer is in contact with the bottom assembly. Next, driving the X-axis carriage drive and the bottom chuck assembly to the process zone under the top chuck assembly. Next, placing the unbonded surface of the carrier wafer in contact with the top chuck assembly and holding the carrier wafer by the top chuck assembly. Next, initiating horizontal motion of the X-axis carriage drive while heat is applied to the carrier wafer and while the carrier wafer is held by the top chuck assembly.