Emily D Renuart

20080202425, Aug 28, 2008

Jan 29, 2008

12/021825

Avgerinos V. Gelatos - Redwood City CA, US
Xiaoxiong Yuan - San Jose CA, US
Salvador P. Umotoy - Antioch CA, US
Yu Chang - San Jose CA, US
Emily Renuart - Santa Clara CA, US
Jing Lin - Mountain View CA, US
Wing-Cheong Lai - Santa Clara CA, US
Sang Q. Le - San Jose CA, US

C23C 16/06

118724

Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120 C. to about 180 C., preferably, from about 140 C. to about 160 C., more preferably, from about 145 C. to about 155 C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.

20080206987, Aug 28, 2008

Jan 29, 2008

12/021798

Avgerinos V. Gelatos - Redwood City CA, US
Xiaoxiong Yuan - San Jose CA, US
Salvador P. Umotoy - Antioch CA, US
Yu Chang - San Jose CA, US
Emily Renuart - Santa Clara CA, US
Jing Lin - Mountain View CA, US
Wing-Cheong Lai - Santa Clara CA, US
Sang Q. Le - San Jose CA, US

H01L 21/44

438654, 257E21476

Embodiments of the invention provide processes for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a method for forming a tungsten-containing material is provided which includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120 C. to about 180 C., exposing the substrate to a reducing gas during a pre-nucleation soak process, and depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber. The method further provides depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process, depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber, and exposing the substrate to another reducing gas during a post-nucleation soak process.

20090081866, Mar 26, 2009

Sep 26, 2008

12/239046

Avgerinos V. Gelatos - Redwood City CA, US
Kai Wu - Palo Alto CA, US
Amit Khandelwal - Santa Clara CA, US
Ross Marshall - Sunnyvale CA, US
Emily Renuart - Santa Clara CA, US
Wing-Cheong Gilbert Lai - Santa Clara CA, US
Jing Lin - Mountain View CA, US

H01L 21/44

438655, 257E21476

Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In one embodiment, a method is provided which includes depositing a tungsten silicide layer on the substrate by exposing the substrate to a continuous flow of a silicon precursor while also exposing the substrate to intermittent pulses of a tungsten precursor. The method further provides that the substrate is exposed to the silicon and tungsten precursors which have a silicon/tungsten precursor flow rate ratio of greater than 1, for example, about 2, about 3, or greater. Subsequently, the method provides depositing a tungsten nitride layer on the tungsten suicide layer, depositing a tungsten nucleation layer on the tungsten nitride layer, and depositing a tungsten bulk layer on the tungsten nucleation layer.

20120003833, Jan 5, 2012

Jun 29, 2011

13/172339

AMIT KHANDELWAL - San Jose CA, US
KAI WU - Palo Alto CA, US
EMILY RENUART - Santa Clara CA, US
JINQIU CHEN - San Jose CA, US
AVGERINOS V. GELATOS - Redwood City CA, US

APPLIED MATERIALS, INC. - Santa Clara CA

H01L 21/285

438680, 257E21161

Methods for forming tungsten-containing layers on substrates are provided herein. In some embodiments, a method for forming a tungsten-containing layer on a substrate disposed in a process chamber may include mixing hydrogen and a hydride to form a first process gas; introducing the first process gas to the process chamber; exposing the substrate in the process chamber to the first process gas for a first period of time to form a conditioned substrate surface; subsequently purging the process chamber of the first process gas; exposing the substrate to a second process gas comprising a tungsten precursor for a second period of time to form a tungsten-containing nucleation layer atop the conditioned substrate surface; and subsequently purging the process chamber of the second process gas.