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Elshan A Akhadov

from Los Alamos, NM
Age ~52
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Also known as:
Sean Akhadov, Elishan A Akhadov, Khado A Elshan, Akhadov A Elshan
Phone and address:
718 43Rd St, Los Alamos, NM 87544
(505) 662-0653
Related to:
Selena Rodriguez, 29Valida D Akhadov, 53Johnny E Rodriguez, 58Leyla Akhadov, 28
Connected to:
Bon A Akhagbeme, 68Singh Akhand, 36Kay Akharume, 57Sidi Akharume, 39Abdellah Akharzouz, 52Rohit Akhauri, 48Armin Akhavan, 40Farhad Akhavan, 57Mojgan Akhavan, 62Tania S Akhavan, 39

Elshan Akhadov Phones & Addresses

  • 718 43Rd St, Los Alamos, NM 87544 (505) 662-0653
  • 2018 24Th St, Los Alamos, NM 87544 (505) 662-0653
  • 9224 Apache Pine Way, Albuquerque, NM 87122 (505) 797-7075
  • 1571 Coombs Dr, Tallahassee, FL 32308
  • 1571A Coombs Dr, Tallahassee, FL 32308
  • Laramie, WY

Work

Company: Nashle Properties Address: 9224 Apache Pine Way, Albuquerque, NM 87211 Phones: (505) 750-1415

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Florida State University 1998 to 2002 Specialities: Physics, Philosophy

Skills

Program Development • Research • Program Management • Project Management • Data Analysis • Leadership • Management • Microsoft Office • Proposal Writing • Strategic Planning • Nonprofit Organizations • Government • Community Outreach

Industries

Research

Specialities

Buyer's Agent • General Contracting

Professional Records

Real Estate Brokers

Elshan Akhadov Photo 1

Elshan Akhadov, Albuquerque NM

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Specialties:
Buyer's Agent
General Contracting
Work:
Nashle Properties
9224 Apache Pine Way, Albuquerque, NM 87211
(505) 750-1415 (Office)

Resumes

Resumes

Elshan Akhadov Photo 2

Research Scientist

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Location:
Los Alamos, NM
Industry:
Research
Work:
Los Alamos National Laboratory
Research Scientist
Education:
Florida State University 1998 - 2002
Doctorates, Doctor of Philosophy, Physics, Philosophy
Skills:
Program Development
Research
Program Management
Project Management
Data Analysis
Leadership
Management
Microsoft Office
Proposal Writing
Strategic Planning
Nonprofit Organizations
Government
Community Outreach

Publications

Us Patents

Charge-Free Method Of Forming Nanostructures On A Substrate

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US Patent:
7759229, Jul 20, 2010
Filed:
Nov 21, 2006
Appl. No.:
11/603516
Inventors:
Mark Hoffbauer - Los Alamos NM, US
Elshan Akhadov - Los Alamos NM, US
Assignee:
Los Alamos National Security, LLC - Los Alamos NM
International Classification:
H01L 21/20
H01L 21/36
US Classification:
438479, 438 22, 438 41, 438222, 438226, 438481, 257E21001, 257E21092, 257E21093
Abstract:
A charge-free method of forming a nanostructure at low temperatures on a substrate. A substrate that is reactive with one of atomic oxygen and nitrogen is provided. A flux of neutral atoms of least one of oxygen and nitrogen is generated within a laser-sustained-discharge plasma source and a collimated beam of energetic neutral atoms and molecules is directed from the plasma source onto a surface of the substrate to form the nanostructure. The energetic neutral atoms and molecules in the beam have an average kinetic energy in a range from about 1 eV to about 5 eV.

Electrochemical Detection Of Single Molecules Using Abiotic Nanopores Having Electrically Tunable Dimensions

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US Patent:
20090283412, Nov 19, 2009
Filed:
Sep 21, 2006
Appl. No.:
11/525329
Inventors:
Jose-Maria Sansinena - Los Alamos NM, US
Antonio Redondo - Los Alamos NM, US
Virginia Olazabal - Los Alamos NM, US
Mark A. Hoffbauer - Los Alamos NM, US
Elshan A. Akhadov - Los Alamos NM, US
International Classification:
G01N 27/26
B05D 5/12
C25D 5/02
B01D 57/02
US Classification:
205122, 204412, 427 58, 205775, 204450
Abstract:
A barrier structure for use in an electrochemical stochastic membrane sensor for single molecule detection. The sensor is based upon inorganic nanopores having electrically tunable dimensions. The inorganic nanopores are formed from inorganic materials and an electrically conductive polymer. Methods of making the barrier structure and sensing single molecules using the barrier structure are also described.

Integration Of Electroencephalography (Eeg) And Transcranial Direct Current Stimulation (Tdcs) With High-Speed Operation, Electrode, Re-Use, Automated Tdcs Electrode Configuration, And Multiple Independent Tdcs Curent Sources

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US Patent:
20130079659, Mar 28, 2013
Filed:
Sep 23, 2011
Appl. No.:
13/241531
Inventors:
Elshan Akhadov - Los Alamos NM, US
Ann Speed - Albuquerque NM, US
David P. Ryan - Albuquerque NM, US
Laura E. Matzen - Albuquerque NM, US
International Classification:
A61B 5/0476
US Classification:
600544
Abstract:
Transcranial direct current stimulation (tDCS) and electroencephalography (EEG) are integrated, including re-using electrodes to perform both tDCS and EEG, and automatically alternating EEG collection and tDCS application. EEG and tDCS functionalities are integrated into a single headset. Improvements in tDCS include realizing multiple tDCS current flow configurations without repositioning electrodes, and concurrently applying multiple independent tDCS currents to a subject.
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Elshan A Akhadov from Los Alamos, NM, age ~52 Get Report