Resumes
Resumes
Elena Ingal Phones & Addresses
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374 Pierce Run, Newark, DE 19702
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Concord, CA
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San Ramon, CA
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San Jose, CA
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New Castle, DE
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Mountain View, CA
Work
Position:
Clerical/White Collar
Education
Degree:
High school graduate or higher
Emails
Business Records
Name / Title
Company / Classification
Phones & Addresses
Partner
Advanced Radiography
Research & Developmnet
Research & Developmnet
374 Person, Wilmington, DE 19801
Publications
Us Patents
Amorphous Selenium Flat Panel X-Ray Imager For Tomosynthesis And Static Imaging
View pageUS Patent:
20060192131, Aug 31, 2006
Filed:
Apr 27, 2006
Appl. No.:
11/412396
Inventors:
Lawrence Cheung - Wilmington DE, US
Snezana Bogdanovich - Newark DE, US
Elena Ingal - Newark DE, US
Cornell Williams - North East MD, US
Snezana Bogdanovich - Newark DE, US
Elena Ingal - Newark DE, US
Cornell Williams - North East MD, US
International Classification:
G01T 1/24
US Classification:
250370140, 250370090
Abstract:
A flat panel x-ray imager exhibiting reduced ghosting effects and overvoltage protection by appropriate leakage current characteristics of the thin-film transistor array. A top electrode of a suitable material is directly on an amorphous selenium-based charge generator layer allowing charge transport across the layer, thereby reducing ghosting. Alternatively, a non-insulating organic layer may be between the top electrode and the charge generating layer. The thin-film transistors have leakage current that rises relatively slowly with voltage across the transistor within a range that matches exposure through an object being imaged but rises at a sufficiently higher rate within a higher range to provide protection even when a corresponding region of the charge generator layer receives greater amounts of x-rays. A voltage is applied to the top electrode. This voltage may be within the range of 500 V to 2,000 V.