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Edith D Bourret-Courchesne

from Soda Springs, CA
Age ~72
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Also known as:
Edith Bourret Courchesne, Edith D Courchesne, Edith B Courchesne, Edith D Bourret, Edith E, Edith Courchesn
Related to:
Thomas F Corbin, 63Phillip Deweese, 74Frederick L Sheldon, 75Tammy Deweese, 36Tamara M Hampson, 56Mary J Sheldon, 77
Connected to:
Adam M Bourret, 53Lisa M Bourret, 53Matthew P Bourret, 50Sebastien Bourret, 41Suzanne M Bourret, 39Thomas W Bourret, 80Ryan J Bourriaque, 42Heidi M Bourrie, 43Carroll A Bourrillion, 84Jerri D Bourrous, 41

Edith Bourret-Courchesne Phones & Addresses

  • Soda Springs, CA
  • 1117 Miller Ave, Berkeley, CA 94708
  • 3279 Southridge Dr, San Pablo, CA 94806
  • El Cerrito, CA
  • Arlington, MA
  • Lunenburg, MA
  • Hudson, NY

Publications

Us Patents

Method Of Growing Gan Films With A Low Density Of Structural Defects Using An Interlayer

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US Patent:
6534332, Mar 18, 2003
Filed:
Apr 20, 2001
Appl. No.:
09/839656
Inventors:
Edith D. Bourret-Courchesne - Richmond CA
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 2100
US Classification:
438 47, 438 46, 438 48, 148 334
Abstract:
A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are similar to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.

Codoped Direct-Gap Semiconductor Scintillators

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US Patent:
7048872, May 23, 2006
Filed:
Sep 15, 2003
Appl. No.:
10/662944
Inventors:
Stephen E. Derenzo - Pinole CA, US
Edith Bourret-Courchesne - Richmond CA, US
Marvin J. Weber - Danville CA, US
Mattias K. Klintenberg - Berkeley CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
C09K 11/54
C09K 11/61
C09K 11/88
H01L 31/32
H01L 31/296
US Classification:
2523016R, 2523014 R, 2523016 S, 2523014 H, 257 43, 257 87, 257 86, 257 76
Abstract:
Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e. g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

Codoped Direct-Gap Semiconductor Scintillators

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US Patent:
7404913, Jul 29, 2008
Filed:
May 11, 2006
Appl. No.:
11/382883
Inventors:
Stephen Edward Derenzo - Pinole CA, US
Edith Bourret-Courchesne - Berkeley CA, US
Marvin J. Weber - Danville CA, US
Mattias K. Klintenberg - Berkeley CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
C09K 11/56
C09K 11/54
US Classification:
2523016R, 2523016 S, 252 623 ZT, 252 623 R, 257 43, 257102, 257 78
Abstract:
Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e. g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

Identifying New Semiconductor Detector Materials By D.c. Ionization Conductivity

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US Patent:
8304748, Nov 6, 2012
Filed:
Oct 19, 2006
Appl. No.:
12/091045
Inventors:
Stephen E. Derenzo - Pinole CA, US
Edith Bourret-Courchesne - Berkeley CA, US
Yetta D. Porter-Chapman - Pittsburg CA, US
Floyd J. James - Jamestown NC, US
Mattias K. Klintenberg - Uppsala, SE
Jie Wang - Shanghai, CN
Jia-Qing Wang, legal representative - Shanghai, CN
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
A61N 5/00
G21G 5/00
US Classification:
2504921, 250351
Abstract:
Herein is described a method for identifying semiconductor radiation detector materials based on the mobility of internally generated electrons and holes. It was designed for the early stages of exploration, when samples are not available as single crystals, but as crystalline powders. Samples are confined under pressure in an electric field and the increase in current resulting from exposure to a high-intensity source of ionization current (e. g. , Co gamma rays) is measured. A pressure cell device is described herein to carry out the method. For known semiconductors, the d. c. ionization current depends on voltage according to the Hecht equation, and for known insulators the d. c. ionization current is below detection limits. This shows that the method can identify semiconductors in spite of significant carrier trapping. Using this method and pressure cell, it was determined that new materials BiOI, PbIF, BiPbOCl, BiPbOBr, BiPbOI, BiGdOCl, PbOI, and PbOIare semiconductors.

Lanthanide Doped Barium Phosphorous Oxide Scintillators

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US Patent:
8384035, Feb 26, 2013
Filed:
Oct 25, 2010
Appl. No.:
12/911583
Inventors:
Ramesh B. Borade - Livermore CA, US
Edith Bourret-Courchesne - Berkeley CA, US
Stephen E. Derenzo - Pinole CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
G01T 1/20
US Classification:
250361R
Abstract:
The present invention provides for a composition comprising an inorganic scintillator comprising a lanthanide-doped barium phosphorous oxide useful for detecting nuclear material.

Lanthanide Doped Strontium Barium Mixed Halide Scintillators

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US Patent:
8486300, Jul 16, 2013
Filed:
Jan 6, 2011
Appl. No.:
12/986103
Inventors:
Gautam Gundiah - Berkeley CA, US
Gregory Bizarri - San Francisco CA, US
Stephen M. Hanrahan - Berkeley CA, US
Edith Bourret-Courchesne - Berkeley CA, US
Stephen E. Derenzo - Pinole CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
C09K 11/61
C09K 11/55
US Classification:
2523014H, 117940, 2504831, 250361 R
Abstract:
The present invention provides for a composition comprising an inorganic scintillator comprising a lanthanide-doped strontium barium mixed halide useful for detecting nuclear material.

Novel Alkali Metal Hafnium Oxide Scintillators

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US Patent:
20090148375, Jun 11, 2009
Filed:
Oct 30, 2008
Appl. No.:
12/262112
Inventors:
Edith Bourret-Courchesne - Berkeley CA, US
Stephen E. Derenzo - Pinole CA, US
Scott Edward Taylor - Pleasant Hill CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
C01F 17/00
US Classification:
423263
Abstract:
The present invention provides for a composition comprising an inorganic scintillator comprising an alkali metal hafnate, optionally cerium-doped, having the formula AHfO:Ce; wherein A is an alkali metal having a valence of 1, such as Li or Na; and the molar percent of cerium is 0% to 100%. The alkali metal hafnate are scintillators and produce a bright luminescence upon irradiation by a suitable radiation.

Novel Alkali Metal And Alkali Earth Metal Gadolinium Halide Scintillators

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US Patent:
20090166585, Jul 2, 2009
Filed:
Oct 30, 2008
Appl. No.:
12/262132
Inventors:
Edith Bourret-Courchesne - Berkeley CA, US
Stephen E. Derenzo - Pinole CA, US
Shameka Parms - Winston-Salem NC, US
Yetta D. Porter-Chapman - Pleasant Hill CA, US
Latoria K. Wiggins - Chestertown MD, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
C09K 11/61
US Classification:
2523014H
Abstract:
The present invention provides for a composition comprising an inorganic scintillator comprising a gadolinium halide, optionally cerium-doped, having the formula AGdX:Ce; wherein A is nothing, an alkali metal, such as Li or Na, or an alkali earth metal, such as Ba; X is F, Br, Cl, or I; n is an integer from 1 to 2; m is an integer from 4 to 7; and the molar percent of cerium is 0% to 100%. The gadolinium halides or alkali earth metal gadolinium halides are scintillators and produce a bright luminescence upon irradiation by a suitable radiation.
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Edith D Bourret-Courchesne from Soda Springs, CA, age ~72 Get Report