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Dwight Hill Phones & Addresses

  • Charlotte, NC
  • New York, NY
  • Brooklyn, NY

Business Records

Name / Title
Company / Classification
Phones & Addresses
Dwight Hill
Hill Drilling Ltd
Drilling & Boring Contractors
Box 508, Thorhild, AB T0A 3J0
(780) 398-2159
Dwight Hill
Hill Drilling Ltd
Drilling & Boring Contractors
(780) 398-2159

Publications

Us Patents

Method And Apparatus For Performing Range Checks

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US Patent:
45424560, Sep 17, 1985
Filed:
Apr 28, 1982
Appl. No.:
6/372482
Inventors:
Dwight D. Hill - Holmdel NJ
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
G06F 702
US Classification:
364200
Abstract:
Disclosed is a method and an apparatus for range checking a value in a programmable system. An instruction prefix LDRNG enables the checking of a value against one or both limits of a range of values. The value is calculated as part of the execution of a primary instruction which is any suitable instruction, such as ADD, MOVE, STORE, etc. , that directly follows the prefix. During the execution of the primary instruction the range check is performed, and an exception is taken without completing execution of the primary instruction if the value does not lie within the range.

Fully Configurable Versatile Field Programmable Function Element

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US Patent:
52552217, Oct 19, 1993
Filed:
Apr 2, 1991
Appl. No.:
7/679370
Inventors:
Dwight D. Hill - Holmdel NJ
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
G11C 700
US Classification:
36518908
Abstract:
A field configurable function element offers multi-function use of memory cells by organizing the cells in memory banks and by providing internal configurable interconnections of the memory banks. A versatile logic function configuration is obtained by storing the truth table of the desired logic functions in the memory cells. An arithmetic functions configuration is obtained by internally interconnecting the memory cells. A read/write memory function configuration is obtained by adding write address decoding, write enablement capability and input data leads. The configuration permits a parallel writing and reading of the memory cells, thereby effectuating a two-port memory operation. An added set of latches connected to the configurable function element and a configurable routing network connected to the inputs of the configurable function element, to the output of the configurable function element and to the output of the latches, form a powerful device that can be easily configured to any one of the three primary modes (logic, arithmetic and memory). A generalized routing fabric coupled to the routing network provides for configurable connections to other configurable function devices.

Multiple Voltage Supplies For Field Programmable Gate Arrays And The Like

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US Patent:
52395103, Aug 24, 1993
Filed:
Nov 25, 1991
Appl. No.:
7/797648
Inventors:
Dwight D. Hill - Holmdel NJ
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
G11C 1100
US Classification:
365226
Abstract:
A field programmable array of application circuitry (C1, C2,. . . ) is programmed (or reprogrammed) by first applying application circuitry power supply (AV. sub. dd =5v) to the application circuitry, and then applying a binary digital data signal (D0/D1) through the source-drain path of an access transistor (N3) in its on condition to the SRAM that controls the on/off condition of its associated controlled pass transistor (N4). This SRAM is typically one of a row-column array of similar SRAMs, and the access transistors for all SRAMs on the same row are similarly supplied with data signals through access transistors. The source-drain path of each pass transistor is connected between a separate pair of application circuitry interconnection points (A1, A2), whereby the on/off condition of this pass transistor determines whether or not these two points are going to be connected after the programming (or reprogramming) is terminated. While the data signal (D0/D1) is thus being applied to the SRAM, and while the power supply (PV. sub. DD) for the SRAM is being maintained at an intermediate level (3v) below the level of the application circuitry power supply voltage (AV. sub.

Isbn (Books And Publications)

Multi-Level Simulation for Vlsi Design

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Author

Dwight D. Hill

ISBN #

0898381843

Algorithms and Techniques for Vlsi Layout Synthesis

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Author

Dwight Hill

ISBN #

0898383013

Dwight D Hill from Charlotte, NC, age ~27 Get Report