Resumes
Resumes
Dwain Jakubik Phones & Addresses
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7066 Fm 879, Palmer, TX 75152 (972) 878-4594
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Laguna Park, TX
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Ennis, TX
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Trinidad, TX
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College Station, TX
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Elgin, TX
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Bonney, TX
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Henderson, TX
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Briggs, TX
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7066 Fm 879, Palmer, TX 75152 (214) 682-1156
Work
Position:
Food Preparation and Serving Related Occupations
Education
Degree:
Associate degree or higher
Emails
Publications
Us Patents
Apparatus And Method For Multi-Target Physical-Vapor Deposition Of A Multi-Layer Material Structure
View pageUS Patent:
6905578, Jun 14, 2005
Filed:
Apr 27, 1998
Appl. No.:
09/067143
Inventors:
Mehrdad M. Moslehi - Los Altos CA, US
Cecil J. Davis - Greenville TX, US
Christopher J. Mann - Danville CA, US
Dwain R. Jakubik - Palmer TX, US
Ajit P. Paranjpe - Sunnyvale CA, US
Cecil J. Davis - Greenville TX, US
Christopher J. Mann - Danville CA, US
Dwain R. Jakubik - Palmer TX, US
Ajit P. Paranjpe - Sunnyvale CA, US
Assignee:
CVC Products, Inc. - Rochester NY
International Classification:
C23C014/34
C23C016/00
C23C016/00
US Classification:
20419212, 20419211, 20419213, 2041922, 20429803, 20429804, 20429809, 20429811, 20429815, 20429816, 20429823, 20429825, 20429826, 20429827, 20429828, 20429829, 118719, 118723 VE
Abstract:
An apparatus and method for depositing plural layers of materials on a substrate within a single vacuum chamber allows high-throughput deposition of structures such as these for GMR and MRAM application. An indexing mechanism aligns a substrate with each of plural targets according to the sequence of the layers in the structure. Each target deposits material using a static physical-vapor deposition technique. A shutter can be interposed between a target and a substrate to block the deposition process for improved deposition control. The shutter can also preclean a target or the substrate and can also be used for mechanical chopping of the deposition process. In alternative embodiments, plural substrates may be aligned sequentially with plural targets to allow simultaneous deposition of plural structures within the single vacuum chamber. A monitoring and control device can be wed to optimize equipment state, process state, and wafer state parameters by sensing each respective state during or after the deposition process.
Processing Apparatus And Method
View pageUS Patent:
49496719, Aug 21, 1990
Filed:
Dec 21, 1985
Appl. No.:
7/292624
Inventors:
Cecil J. Davis - Greenville TX
Robert T. Matthews - Plano TX
Rudy L. York - Plano TX
Joseph D. Luttmer - Richardson TX
Dwain R. Jakubik - Palmer TX
James B. Hunter - Dallas TX
Robert T. Matthews - Plano TX
Rudy L. York - Plano TX
Joseph D. Luttmer - Richardson TX
Dwain R. Jakubik - Palmer TX
James B. Hunter - Dallas TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
C23C 1600
US Classification:
118725
Abstract:
A processing apparatus and method wherein two separate gas feeds are provided in proximity to the face of a face down wafer. A shroud can be used to maximize mixing of the two gas feed streams without excessive residence time.