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Duli Te Mao

from Sunnyvale, CA
Age ~61
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Also known as:
Duli T Mao, Mau Duli
Phone and address:
892 Pyrus Way, Sunnyvale, CA 94087
Related to:
Qichen Wang, 59Rong Wang, 45Xiaoyong Wang, 44Mingxiang Wang, 51
Connected to:
Angela F Mao, 38Baodong Mao, 42Calvin K Mao, 35Carolyn Mao, 33Cathy S Mao, 40Changshi Mao, 59Chengde Mao, 60Cody V Mao, 28Cui L Mao, 67Cuiping Mao, 38

Duli Mao Phones & Addresses

  • 892 Pyrus Way, Sunnyvale, CA 94087
  • 294 Hiddenlake Dr, Sunnyvale, CA 94089
  • San Jose, CA
  • Redwood City, CA
  • Santa Clara, CA

Publications

Us Patents

Backside Illuminated Image Sensor Having Deep Light Reflective Trenches

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US Patent:
7800192, Sep 21, 2010
Filed:
Sep 4, 2008
Appl. No.:
12/204743
Inventors:
Vincent Venezia - Sunnyvale CA, US
Hsin-Chih Tai - Cupertino CA, US
Duli Mao - Sunnyvale CA, US
Sohei Manabe - San Jose CA, US
Howard E. Rhodes - San Martin CA, US
Wei Dong Qian - Los Gatos CA, US
Assignee:
OmniVision Technologies, Inc. - Santa Clara CA
International Classification:
H01L 31/00
US Classification:
257432, 257291, 257292, 257E31001, 438 69
Abstract:
An array of pixels is formed using a substrate having a frontside and a backside that is for receiving incident light. Each pixel typically includes metallization layers included in the frontside of the substrate, a photosensitive region formed in the backside of the substrate, and a trench formed around the photosensitive region in the backside of the substrate. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.

Backside Illuminated Imaging Sensor With Light Reflecting Transfer Gate

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US Patent:
7820498, Oct 26, 2010
Filed:
Aug 27, 2008
Appl. No.:
12/199737
Inventors:
Sohei Manabe - San Jose CA, US
Hsin-Chih Tai - Cupertino CA, US
Vincent Venezia - Sunnyvale CA, US
Duli Mao - Sunnyvale CA, US
Yin Qian - Milpitas CA, US
Assignee:
OmniVision Technologies, Inc. - Santa Clara CA
International Classification:
H01L 21/00
US Classification:
438149
Abstract:
A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that can include a photodiode region, an insulation layer, and a reflective layer. The photodiode is typically formed in the frontside of the semiconductor substrate. A surface shield layer can be formed on the frontside of the photodiode region. A light reflecting layer can be formed using silicided polysilicon on the frontside of the sensor. The photodiode region receives light from the back surface of the semiconductor substrate. When a portion of the received light propagates through the photodiode region to the light reflecting layer, the light reflecting layer reflects the portion of light received from the photodiode region towards the photodiode region. The silicided polysilicon light reflecting layer also forms a gate of a transistor for establishing a conductive channel between the photodiode region and a floating drain.

Multilayer Image Sensor Pixel Structure For Reducing Crosstalk

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US Patent:
7875918, Jan 25, 2011
Filed:
Apr 24, 2009
Appl. No.:
12/430006
Inventors:
Vincent Venezia - Sunnyvale CA, US
Ashish Shah - Milpitas CA, US
Rongsheng Yang - Palo Alto CA, US
Duli Mao - Sunnyvale CA, US
Yin Qian - Milpitas CA, US
Hsin-Chih Tai - Cupertino CA, US
Howard E. Rhodes - San Martin CA, US
Assignee:
OmniVision Technologies, Inc. - Santa Clara CA
International Classification:
H01L 31/062
US Classification:
257294, 257E27133
Abstract:
An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type.

Cmos Image Sensor With High Full-Well-Capacity

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US Patent:
7888215, Feb 15, 2011
Filed:
Jun 4, 2008
Appl. No.:
12/133217
Inventors:
Duli Mao - Sunnyvale CA, US
Hsin-Chih Tai - Cupertino CA, US
Vincent Venezia - Sunnyvale CA, US
Yin Qian - Milpitas CA, US
Howard E. Rhodes - San Martin CA, US
Assignee:
OmniVision Technologies, Inc. - Santa Clara CA
International Classification:
H01L 21/336
US Classification:
438286, 438 48, 438 57, 438 59, 438197, 257E3111
Abstract:
An image sensor with a high full-well capacity includes a photosensitive region, a transfer gate, and sidewall spacers. The photosensitive region is formed to accumulate an image charge in response to light. The transfer gate disposed adjacent to the photosensitive region and coupled to selectively transfer the image charge from the photosensitive region to other pixel circuitry. First and second sidewall spacers are disposed on either side of the transfer gate. The first sidewall spacer closest to the photosensitive region is narrower than the second sidewall spacer. In some cases, the first sidewall spacer may be omitted.

Backside Illuminated Imaging Sensor With Improved Infrared Sensitivity

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US Patent:
7888763, Feb 15, 2011
Filed:
Sep 3, 2008
Appl. No.:
12/203858
Inventors:
Yin Qian - Milpitas CA, US
Howard E. Rhodes - San Martin CA, US
Hsin-Chih Tai - Cupertino CA, US
Vincent Venezia - Sunnyvale CA, US
Duli Mao - Sunnyvale CA, US
Assignee:
OmniVision Technologies, Inc. - Santa Clara CA
International Classification:
H01L 31/00
H01L 21/00
US Classification:
257460, 257447, 257E33068
Abstract:
A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.

Masked Laser Anneal During Fabrication Of Backside Illuminated Image Sensors

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US Patent:
7901974, Mar 8, 2011
Filed:
Jul 23, 2008
Appl. No.:
12/178552
Inventors:
Vincent Venezia - Sunnyvale CA, US
Hsin-Chih Tai - Cupertino CA, US
Duli Mao - Sunnyvale CA, US
Yin Qian - Milpitas CA, US
Assignee:
OmniVision Technologies, Inc. - Santa Clara CA
International Classification:
H01L 21/00
US Classification:
438 73, 257292, 438 75, 438799, 438949
Abstract:
A technique for fabricating an array of imaging pixels includes fabricating front side components on a front side of the array. After fabricating the front side components, a dopant layer is implanted on a backside of the array. A mask is formed over the dopant layer to selectively expose portions of the dopant layer. Next, the exposed portions of the dopant layer are laser annealed. Alternatively, the mask may be disposed over the backside prior to the formation of the dopant layer and the dopants implanted through the exposed portions and subsequently laser annealed.

Backside Illuminated Imaging Sensor With Improved Angular Response

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US Patent:
7902618, Mar 8, 2011
Filed:
Nov 17, 2008
Appl. No.:
12/272677
Inventors:
Duli Mao - Sunnyvale CA, US
Vincent Venezia - Sunnyvale CA, US
Hsin-Chih Tai - Cupertino CA, US
Yin Qian - Milpitas CA, US
Howard E. Rhodes - San Martin CA, US
Assignee:
Omni Vision Technologies, Inc. - Santa Clara CA
International Classification:
H01L 27/14
US Classification:
257431, 257292, 438 59
Abstract:
A backside illuminated imaging pixel with improved angular response includes a semiconductor layer having a front and a back surface. The imaging pixel also includes a photodiode region formed in the semiconductor layer. The photodiode region includes a first and a second n-region. The first n-region has a centerline projecting between the front and back surfaces of the semiconductor layer. The second n-region is disposed between the first n-region and the back surface of the semiconductor layer such that the second n-region is offset from the centerline of the first n-region.

Image Sensor With Low Crosstalk And High Red Sensitivity

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US Patent:
7910961, Mar 22, 2011
Filed:
Oct 8, 2008
Appl. No.:
12/247776
Inventors:
Duli Mao - Sunnyvale CA, US
Vincent Venezia - Sunnyvale CA, US
Hsin-Chih Tai - Cupertino CA, US
Yin Qian - Milpitas CA, US
Howard E. Rhodes - San Martin CA, US
Assignee:
OmniVision Technologies, Inc. - Santa Clara CA
International Classification:
H01L 29/78
H01L 31/0232
US Classification:
257258
Abstract:
A color pixel array includes first, second, and third pluralities of color pixels each including a photosensitive region disposed within a first semiconductor layer. In one embodiment, a second semiconductor layer including deep dopant regions is disposed below the first semiconductor layer. The deep dopant regions each reside below a corresponding one of the first plurality of color pixels but substantially not below the second and third pluralities of color pixels. In one embodiment, buried wells are disposed beneath the second and third pluralities of color pixels but substantially not below the first plurality of color pixels.
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Duli Te Mao from Sunnyvale, CA, age ~61 Get Report