Resumes
Resumes
Zheng Duan Phones & Addresses
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San Jose, CA
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Mountain View, CA
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Cupertino, CA
Publications
Us Patents
Method And System For Determining Temperature Using A Magnetic Junction
View pageUS Patent:
20180294024, Oct 11, 2018
Filed:
Jun 11, 2018
Appl. No.:
16/005595
Inventors:
- Gyeonggi-do, KR
Dmytro Apalkov - San Jose CA, US
Vladimir Nikitin - Campbell CA, US
Robert Beach - Los Gatos CA, US
Zheng Duan - Sunnyvale CA, US
Dmytro Apalkov - San Jose CA, US
Vladimir Nikitin - Campbell CA, US
Robert Beach - Los Gatos CA, US
Zheng Duan - Sunnyvale CA, US
International Classification:
G11C 11/16
G11C 7/04
G11C 29/50
G01K 7/36
G01R 33/14
G01R 33/09
G01K 13/00
G11C 7/04
G11C 29/50
G01K 7/36
G01R 33/14
G01R 33/09
G01K 13/00
Abstract:
A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
Method And System For Determining Temperature Using A Magnetic Junction
View pageUS Patent:
20160104544, Apr 14, 2016
Filed:
Sep 15, 2015
Appl. No.:
14/854251
Inventors:
- Gyeonggi-do, KR
Dmytro Apalkov - San Jose CA, US
Vladimir Nikitin - Campbell CA, US
Robert Beach - San Jose CA, US
Zheng Duan - Sunnyvale CA, US
Dmytro Apalkov - San Jose CA, US
Vladimir Nikitin - Campbell CA, US
Robert Beach - San Jose CA, US
Zheng Duan - Sunnyvale CA, US
International Classification:
G11C 29/00
G01R 33/14
G11C 11/16
G01K 13/00
G01R 33/14
G11C 11/16
G01K 13/00
Abstract:
A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.