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Diane M Szaflarski

from Charlottesville, VA
Age ~65
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Also known as:
Diane Dr Szaflarski, Diane Marie Szaflarski, Diane N Szaflarski, Diane M S Simon, Dianne M Szaflarski, Diane M Szaflarsk, Diane I
Related to:
John Simon, 68John Simon
Connected to:
Alicja Szaflarska, 33Denise B Szaflarski, 64Karl W Szaflarski, 68Krista R Szaflarski, 38Aneta B Szafraniec, 46Brian Szafran, 40Bruce Szafraniec, 77Cynthia P Szafraniec, 66David A Szafranski, 71James J Szafran, 77

Diane Szaflarski Phones & Addresses

  • Charlottesville, VA
  • Bethlehem, PA
  • 6 Altmont Ct, Durham, NC 27705 (919) 402-8204
  • San Diego, CA
  • Los Angeles, CA
  • 657 Morven Dr, Charlottesville, VA 22902

Education

Degree: High school graduate or higher

Resumes

Resumes

Diane Szaflarski Photo 1

Diane Szaflarski

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Location:
Charlottesville, VA

Publications

Us Patents

Method Of Ultrasonic Imaging Of The Gastrointestinal Tract And Upper Abdominal Organs Using An Orally Administered Negative Contrast Medium

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US Patent:
53851471, Jan 31, 1995
Filed:
Sep 22, 1993
Appl. No.:
8/125621
Inventors:
Leslie D. Anderson - Encinitas CA
Janeth M. Bartlett - San Diego CA
Diane M. Szaflarski - San Diego CA
Kenneth J. Widder - Rancho Santa Fe CA
Assignee:
Molecular Biosystems, Inc. - San Diego CA
International Classification:
A61B 800
US Classification:
12866202
Abstract:
A method for enhanced ultrasonic imaging of the tissues defining the gastrointestinal tract and the upper abdominal organs wherein the gastrointestinal tract is filled with a chemically defined essentially sonolucent ultrasound contrast agent that is stable under gastric conditions and has a gastric emptying time of at least about twenty minutes, thus causing the lumen of the upper gastrointestinal tract to appear dark relative to the positive image of the gastrointestinal tract walls and upper abdominal organs.

Photonic Silicon On A Transparent Substrate

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US Patent:
60939419, Jul 25, 2000
Filed:
Sep 9, 1993
Appl. No.:
8/118900
Inventors:
Stephen D. Russell - San Diego CA
Wadad B. Dubbelday - Spring Valley CA
Randy L. Shimabukuro - San Diego CA
Paul R. de la Houssaye - San Diego CA
Diane M. Szaflarski - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 3300
H01L 310312
H01L 2715
H01L 3112
US Classification:
257103
Abstract:
A light emitting photonic structure has a transparent substrate, such as sapphire, supporting a layer of group IV semiconductor material, such as silicon, having at least one porous region from which light is emitted as a response to an electrical or optical stimulus. Optionally, the group IV semiconductor material may be germanium, carbon, tin, silicon-germanium, silicon carbide, single crystal structures, polycrystalline structures, or amorphous structures and the transparent substrate may be glass, quartz, fused silica, diamond, ruby, yttria alumina garnet, yttria stabilized zirconium, magnesium fluoride or magnesium oxide. When the stimulus is electrical, the response is electroluminescence or cathodoluminescence and when the stimulus is optical, the response is photoluminescence. The method includes providing a transparent substrate, forming a layer of a group IV semiconductor material on the transparent substrate, and fabricating at least one region in the layer of the group IV semiconductor material from which light is emitted as a response to a electro- or photo-stimulus. The fabricating of the region is by a photochemical etch by an etching solution and a means to catalyze an etching reaction and may further include an illuminating of the region with light or an other suitable wavelength to provide for a photo-initiated photo-chemical stain etch of the region.

Method Of Controlling Photoemission From Porous Silicon Using Ion Implantation

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US Patent:
54200490, May 30, 1995
Filed:
Sep 9, 1993
Appl. No.:
8/118901
Inventors:
Stephen D. Russell - San Diego CA
Wadad B. Dubbelday - Spring Valley CA
Randy L. Shimabukuro - San Diego CA
Diane M. Szaflarski - San Diego CA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 3300
H01L 21465
US Classification:
437 24
Abstract:
This invention describes a method of controlling light emission from porous silicon and porous silicon devices using ion implantation. The emitted light intensity can be either selectively increased or decreased by suitable processing of the silicon prior to the fabrication of the porous layer. Amorphizing the silicon prior to the fabrication of the porous layer quenches the light emission. Ion implantation with doses below the amorphization level enhances the intensity of the emitted light of the subsequently fabricated porous layer.
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Diane M Szaflarski from Charlottesville, VA, age ~65 Get Report