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Deodatta Shenai-Khatkhate Phones & Addresses

  • 5 Surrey Ln, Danvers, MA 01923

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Deodatta Shenai-Khatkhate

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Location:
Greater Boston Area
Industry:
Chemicals

Publications

Us Patents

Trialkyl Group Va Metal Compounds

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US Patent:
6660874, Dec 9, 2003
Filed:
Apr 6, 2002
Appl. No.:
10/118382
Inventors:
Deodatta V. Shenai-Khatkhate - Danvers MA
Michael B. Power - Newburyport MA
Artashes Amamchyan - Wakefield MA
Assignee:
Shipley Company, L.L.C. - Marlborough MA
International Classification:
C07F 900
US Classification:
556 70, 4272481, 427588, 428 11, 257 49
Abstract:
Disclosed are methods of preparing trialkyl Group VA metal compounds in high yield and high purity. Such trialkyl Group VA metal compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities.

Organoindium Compounds

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US Patent:
6680397, Jan 20, 2004
Filed:
Jan 17, 2003
Appl. No.:
10/346585
Inventors:
Deodatta Vinayak Shenai-Khatkhate - Danvers MA
Assignee:
Shipley Company, L.L.C. - Marlborough MA
International Classification:
C07F 500
US Classification:
556 1, 427252, 427593, 438680, 438681
Abstract:
Disclosed are trialkylindium compounds containing two bulky alkyl groups that are liquids or easily liquefiable solids and have sufficient vapor pressure for use in vapor deposition processes, as well as methods of depositing indium containing films using such compounds.

Trialkylindium Preparation

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US Patent:
6770769, Aug 3, 2004
Filed:
Apr 5, 2003
Appl. No.:
10/407993
Inventors:
Deodatta Vinayak Shenai-Khatkhate - Danvers MA
Michael Brendan Power - Newburyport MA
Assignee:
Shipley Company, L.L.C. - Marlborough MA
International Classification:
C07F 500
US Classification:
556 1
Abstract:
Trialkylindium compounds are prepared by reacting indium trihalide with a trialkylaluminum compound in the presence of a fluoride salt, wherein the molar ratio of the indium trihalide to the fluoride salt is at least 1:4. 5. Such trialkylindium compounds are particularly suitable for use in metalorganic vapor phase epitaxy.

Alkyl Group Va Metal Compounds

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US Patent:
6939983, Sep 6, 2005
Filed:
May 7, 2004
Appl. No.:
10/841127
Inventors:
Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Artashes Amamchyan - Wakefield MA, US
Michael Brendan Power - Newburyport MA, US
James Edward Felton - Hudson NH, US
Assignee:
Rohm and Haas Electronic Materials, LLC - Marlborugh MA
International Classification:
C07F009/02
C07F009/90
C07F009/94
US Classification:
556 70, 568 8, 568 16
Abstract:
A method of preparing Group VA organometal compounds in high yield and high purity by the reaction of a Grignard reagent with a Group VA metal halide in certain ethereal solvents is provided. A method of preparing Group VA organometal hydrides is also provided.

Alkyl Group Va Metal Compounds

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US Patent:
6956127, Oct 18, 2005
Filed:
Jan 17, 2003
Appl. No.:
10/346275
Inventors:
Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Michael Brendan Power - Newburyport MA, US
Artashes Amamchyan - Wakefield MA, US
Assignee:
Shipley Company, L.L.C. - Marlborough MA
International Classification:
C07F009/72
C07F009/02
C07F009/90
C23C016/00
H01L021/44
US Classification:
556 70, 568 8, 568 16, 427587, 427593, 438604, 438606, 438681
Abstract:
Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RMX, where R is an alkyl, Mis a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.

Preparation Of Group Iva And Group Via Compounds

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US Patent:
7045451, May 16, 2006
Filed:
Apr 2, 2004
Appl. No.:
10/817571
Inventors:
Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Assignee:
Rohm and Haas Electronic Materials LLC - Marlborough MA
International Classification:
H01L 21/28
H01L 21/3205
US Classification:
438602, 438603, 438604, 438513, 438680
Abstract:
Methods of preparing Group IVA and Group VIA organometallic compounds, particularly Group IVA organometallic compounds, are provided. Such manufacturing methods employ an amine and/or phosphine catalyst in a transalkylation step and may be performed in a batch, semi-continuous or continuous manner.

Method Of Depositing Germanium-Containing Films

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US Patent:
7141488, Nov 28, 2006
Filed:
Apr 2, 2004
Appl. No.:
10/816356
Inventors:
Egbert Woelk - North Andover MA, US
Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Assignee:
Rohm and Haas Electronic Materials LLC - Marlborough MA
International Classification:
H01L 21/205
US Classification:
438478, 42725528
Abstract:
Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.

Method For Making Organometallic Compounds

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US Patent:
7166734, Jan 23, 2007
Filed:
Sep 2, 2005
Appl. No.:
11/219227
Inventors:
Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Artashes Amamchyan - Wakefield MA, US
Assignee:
Rohm and Haas Electronic Materials LLC - Marlborough MA
International Classification:
C07F 5/06
US Classification:
556187, 556 1, 556129, 556170
Abstract:
Organometallic compounds of Group IIB and IIIA metals that are substantially pure and contain low levels of oxygenated impurities are provided. Also provided are methods of preparing such organometallic compounds.
Deodatta V Shenai-Khatkhate from Danvers, MA Get Report