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Dean Tsang Phones & Addresses

  • 26 Beacon St, Burlington, MA 01803 (781) 273-1423
  • 26 Beacon St APT 34F, Burlington, MA 01803 (781) 273-1423
  • 26 Beacon St APT 34F, Burlington, MA 01803

Work

Position: Administrative Support Occupations, Including Clerical Occupations

Education

Degree: Associate degree or higher

Industries

Nanotechnology

Resumes

Resumes

Dean Tsang Photo 1

Independent Nanotechnology Professional

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Location:
Greater Boston Area
Industry:
Nanotechnology

Business Records

Name / Title
Company / Classification
Phones & Addresses
Dean Z. Tsang
President
XERESEARCH CORPORATION
Commercial Physical Research · Services-Misc
26 Beacon St #34F, Burlington, MA 01803

Publications

Us Patents

High-Speed Electro-Optic Modulator

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US Patent:
6404538, Jun 11, 2002
Filed:
Oct 24, 2000
Appl. No.:
09/695538
Inventors:
Qiushui Chen - Medford MA
Gary Y. Wang - Fremont CA
Paul Melman - Newton MA
Kevin Zou - Burlington MA
Hua Jiang - Mansfield MA
Run Zhang - Bedford MA
Jing Zhao - Winchester MA
Dean Tsang - Burlington MA
Feiling Wang - Medford MA
Assignee:
Corning Applied Technologies Corporation - Woburn MA
International Classification:
G02F 100
US Classification:
359323, 359239, 359251, 359322
Abstract:
An optical modulator is provided to control the intensity of a transmitted or reflected light. In a transmission mode, a separator splits arbitrarily polarized light into two polarization rays and one is made to travel a separate path from the other. A recombiner causes the two rays to recombine at an output unless an electro-optic phase retarder changes the polarization of the two rays, in which case, both of them miss the output by an amount which is a function of the voltage on the retarder. A normally-off version with low polarization mode dispersion is obtained by changing the orientation of the recombiner. A normally-on version with low polarization mode dispersion is obtained with a passive polarization direction rotator. Similar results can be obtained in a reflection mode where the input and output are on the same side of the modulator. Versions using a GRIN lens are particularly suited to modulation of light out of and back into fiber-optic cables.

Dynamic Optical Filter

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US Patent:
6522456, Feb 18, 2003
Filed:
May 4, 2001
Appl. No.:
09/848766
Inventors:
Qiushui Chen - Medford MA
Hua Jiang - Mansfield MA
Yingyin Zou - Burlington MA
Dean Tsang - Burlington MA
Paul Melman - Newton MA
Feiling Wang - Medford MA
Guanghai Jin - Boxborough MA
Jing Zhao - Winchester MA
Assignee:
Corning Applied Technologies, Inc. - Woburn MA
Corning Incorporated - Corning NY
International Classification:
G02F 100
US Classification:
359322, 359239, 359245, 359246, 359248, 359256, 359323
Abstract:
An apparatus and method for filtering an optical input is disclosed. In an illustrative embodiment, an optical input is split into polarization components along separate paths. The polarization components are then fed into a first electro-optic device that includes a set of electrodes across which a voltage is applied to adjust a wavelength transmission characteristic of the device. A section of the first device positioned between the electrodes preferably has a birefringence that is adjusted depending on the voltage applied across the electrodes. The adjusted components of the optical input are thereafter combined to produce an optical output. Accordingly, the optical input can be attenuated based on the voltage applied to electrodes of the first electro-optic device.

Spatial Light Modulator

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US Patent:
6798550, Sep 28, 2004
Filed:
Nov 17, 2000
Appl. No.:
09/715867
Inventors:
Feiling Wang - Medford MA
Kewen Kevin Li - Andover MA
Dean Tsang - Burlington MA
Hua Jiang - Mansfield MA
Assignee:
Corning Applied Technologies Corporation - Woburn MA
International Classification:
G02F 103
US Classification:
359245, 359254, 359248, 359260
Abstract:
A modulator formed with a solid state electro-optic material having a pixellated structure interconnected to a circuit on a semiconductor substrate. Silicon CMOS integrated circuit that can include random access memories (RAMs) are used as a substrate and interfaced to solid state electro-optic materials coated thereon. In particular, the electro-optic modulators are controlled by RAM cells to produce a modulation of reflected light. SRAMs can be used with connection to the SRAM cell flip-flop. DRAMs can be used with the modulator replacing the DRAM storage capacitor. The SLM thus formed can be connected to a digital computer and controlled as if were a being written to as a memory, but other IC structures can also be used. In order to enhance the modulation effects, the electro-optic material is used as the spacer for a Fabry-Perot etalon structure that is also deposited on the semiconductor substrate. PLZT is a suitable electro-optic material.

Metal Transistor Device

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US Patent:
7838875, Nov 23, 2010
Filed:
Jan 22, 2004
Appl. No.:
10/762658
Inventors:
Dean Z. Tsang - Burlington MA, US
International Classification:
H01L 29/12
US Classification:
257 43, 257213, 257288
Abstract:
The present invention relates to a depletion or enhancement mode metal transistor in which the channel region of a transistor device comprises a thin film metal or metal composite layer formed over an insulating substrate.

Metal Transistor Device

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US Patent:
8242497, Aug 14, 2012
Filed:
Nov 22, 2010
Appl. No.:
12/951839
Inventors:
Dean Z. Tsang - Burlington MA, US
International Classification:
H01L 29/12
US Classification:
257 43, 257329, 257213, 257288, 257E29262, 257E21632, 257E2141, 438212, 438268
Abstract:
The present invention is related to a depletion or enhancement mode metal transistor in which the channel regions of a transistor device comprises a thin film metal or metal composite layer formed over an insulating substrate.

Intra-Cavity Loss-Modulated Diode Laser

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US Patent:
45637652, Jan 7, 1986
Filed:
Jul 11, 1984
Appl. No.:
6/629639
Inventors:
Dean Z. Tsang - Waltham MA
James N. Walpole - Concord MA
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
H01S 319
US Classification:
372 50
Abstract:
An amplitude-modulated diode laser, fabricated from a double heterostructure wafer, having a passive central layer which is partially doped to permit amplification. Losses are modulated in another section of the wafer, electrically isolated from the doped amplifying section, by reverse biasing a P-N junction also formed by doping.

Compact Micro-Optical Edge-Emitting Semiconductor Laser Assembly

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US Patent:
57578303, May 26, 1998
Filed:
Feb 7, 1996
Appl. No.:
8/597757
Inventors:
Dean Z. Tsang - Burlington MA
James N. Walpole - Concord MA
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
H01S 302
US Classification:
372 36
Abstract:
In an apparatus and method for aligning a microlens relative to an edge-emitting semiconductor laser, the components are aligned and coupled without the need for intermediate optics. An edge-emitting semiconductor laser is mounted to a support body which preferably operates as a heat sink. The support body has a side face, which is substantially parallel by the emitting face of the laser. The microlens is formed on a lens substrate. The lens substrate is mounted adjacent the emitting face of the laser and further mounted adjacent the side face of the support body such that the optical axis of the lens substantially aligns with the optical axis of the laser. A substantial portion of the lens substrate extends along the plane of the side face of the support body. The invention has applications in coupling high-power laser energy into fiber optics and in optical computing devices requiring arrays of lasers.

High-Speed Electro-Optic Modulator

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US Patent:
63300974, Dec 11, 2001
Filed:
Apr 8, 1999
Appl. No.:
9/288439
Inventors:
Qiushui Chen - Medford MA
Gary Y. Wang - Fremont CA
Paul Melman - Newton MA
Kevin Zou - Burlington MA
Hua Jiang - Mansfield MA
Run Zhang - Bedford MA
Jing Zhao - Winchester MA
Dean Tsang - Burlington MA
Feiling Wang - Medford MA
Assignee:
Corning Applied Technologies Corp. - Woburn MA
International Classification:
G02B 2600
G02F 100
US Classification:
359239
Abstract:
An optical modulator is provided to control the intensity of a transmitted or reflected light. In a transmission mode, a separator splits arbitrarily polarized light into two polarization rays and one is made to travel a separate path from the other. A recombiner causes the two rays to recombine at an output unless an electro-optic phase retarder changes the polarization of the two rays, in which case, both of them miss the output by an amount which is a function of the voltage on the retarder. A normally-off version with low polarization mode dispersion is obtained by changing the orientation of the recombiner. A normally-on version with low polarization mode dispersion is obtained with a passive polarization direction rotator. Similar results can be obtained in a reflection mode where the input and output are on the same side of the modulator. Versions using a GRIN lens are particularly suited to modulation of light out of and back into fiber-optic cables.
Dean Z Tsang from Burlington, MA, age ~72 Get Report