Search

Dean Peter Freeman

from Portland, OR
Age ~51
Get Report
Also known as:
Dean P Freeman, Dean T Freeman
Phone and address:
10903 SW 55Th Ave, Portland, OR 97219
Related to:
Elwood A Freeman, 77Dennis W Freeman, 60Cleburn C Freeman, 83Jill D Freeman, 77Dawn FreemanAlyssa Y Moore, 51John D Macon, 72Christopher T Brown, 55Pamela G Macon, 73Sylvia C Freeman, 58
Connected to:
Addie E Freeman, 36Ade Freeman, 31Alesia C Freeman, 62Alexia K Freeman, 41Algeania W Freeman, 75Allie Freeman, 58Ama M Freeman, 44Amechia Freeman, 47Anchalee Freeman, 44Andrew R Freeman, 38

Dean Freeman Phones & Addresses

  • 10903 SW 55Th Ave, Portland, OR 97219
  • 1536 58Th Ave, Portland, OR 97213
  • Carlsbad, CA
  • Memphis, TN
  • 220 Sussex Ct, Cordova, TN 38018
  • Drummonds, TN
  • Blacksburg, VA
  • Roanoke, VA

Business Records

Name / Title
Company / Classification
Phones & Addresses
Dean Freeman
Independence High School Reunion Class of' '75
Clubs
176 SneadRoad, Fort Mill, NC 29715
(704) 509-9839

Publications

Isbn (Books And Publications)

Geri Halliwell: Just for the Record

View page
Author

Dean Freeman

ISBN #

0091888042

VII: David Beckham

View page
Author

Dean Freeman

ISBN #

0297851438

Forever Spice

View page
Author

Dean Freeman

ISBN #

0316853615

Beckham: My World

View page
Author

Dean Freeman

ISBN #

0340792701

Us Patents

Deposition Of Polysilicon Using A Remote Plasma And In Situ Generation Of Uv Light.

View page
US Patent:
48822990, Nov 21, 1989
Filed:
Nov 5, 1987
Appl. No.:
7/117707
Inventors:
Dean W. Freeman - San Diego CA
James B. Burris - Dallas TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21302
H01L 21306
US Classification:
437233
Abstract:
A processing apparatus and method for depositing doped or undoped polysilicon on a wafer utilizing a single process chamber to heat the wafer, provide a silicon comtaining gas, and if desired, an appropriate dopant gas to the chamber with the excitation energy being provided by either or both of a remotely generated plasma form and illumination of the wafer with an in situ generated ultraviolet energy.

Plasma And Plasma Uv Deposition Of Sio.sub.2

View page
US Patent:
49160915, Apr 10, 1990
Filed:
Dec 13, 1988
Appl. No.:
7/284835
Inventors:
Dean W. Freeman - San Diego CA
James B. Burris - Dallas TX
Cecil J. Davis - Greenville TX
Lee Loewenstein - Plano TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 2100
H01L 2102
H01L 21306
C03C 1500
US Classification:
437238
Abstract:
A processing apparatus and method utilizing a single process chamber to deposit a layer of doped or undoped silicon dioxide utilizing a silicon source and a dopant gas and a remote plasma from an oxygen source and a source of additional ultraviolet light.

Semiconductor Device With Adjacent Non-Oxide Layers And The Fabrication Thereof

View page
US Patent:
50232061, Jun 11, 1991
Filed:
Dec 16, 1987
Appl. No.:
7/133757
Inventors:
Dean W. Freeman - San Diego CA
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 2100
H01L 2102
C23C 1500
US Classification:
437228
Abstract:
A semiconductor device is disclosed in which a deposited non-oxide layer (44) overlies and physically contacts another non-oxide layer (38) so that no intervening oxide layer is present. The device is fabricated by performing an insitu etch and deposition process. In one embodiment, the device (36) is sealed in a LPCVD chamber (10) and etched using gaseous anhydrous hydrofluoric acid to remove an oxide (40) from one non-oxide layer (38). Then, without exposing the device to a water rinse or to the atmosphere, a chemical vapor deposition process applies the deposited layer (44) upon the other layer (38).
Control profile
Dean Peter Freeman from Portland, OR, age ~51 Get Report