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David Schifferle Phones & Addresses

  • 231 Greenwood Dr, East Aurora, NY 14052 (585) 652-2865 (716) 652-6690
  • 47 Willow St, East Aurora, NY 14052
  • Lancaster, NY
  • 231 Greenwood Dr, East Aurora, NY 14052

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Position: Production Occupations

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Us Patents

Semiconductor Device Encapsulation Method

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US Patent:
53576730, Oct 25, 1994
Filed:
Oct 1, 1993
Appl. No.:
8/131060
Inventors:
Anthony J. Polak - Lake Zurich IL
David J. Schifferle - East Aurora NY
Tom Wang - Northbrook IL
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H05K 334
US Classification:
29840
Abstract:
In a semiconductor device encapsulation assembly (50; 60), a semiconductor device (21), preferably a pressure transducer, is mounted on a base (11) in a cavity (20) formed by the base and surrounding walls (15). Electrical connections, preferably wire bonds (27), connect the semiconductor device to conductor paths (28) on the base within the cavity. An encapsulation material comprising a thixotropic fluorosiloxane material (51; 61) is applied in the cavity and completely covers the semiconductor device and the electrical connections. This structure enables the semiconductor device to withstand typical automotive contaminants, such as mild acids and gasoline, while also preventing erratic semiconductor device operation due to bubbles which may be drawn into the encapsulation material.

Semiconductor Device Having Encapsulation Comprising Of A Thixotropic Fluorosiloxane Material

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US Patent:
52586502, Nov 2, 1993
Filed:
Aug 26, 1991
Appl. No.:
7/749756
Inventors:
Anthony J. Polak - Lake Zurich IL
David J. Schifferle - East Aurora NY
Tom Wang - Northbrook IL
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 2328
H01L 2302
H01L 2312
H01B 1700
US Classification:
257788
Abstract:
In a semiconductor device encapsulation assembly (50; 60), a semiconductor device (21), preferably a pressure transducer, is mounted on a base (11) in a cavity (20) formed by the base and surrounding walls (15). Electrical connections, preferably wire bonds (27), connect the semiconductor device to conductor paths (28) on the base within the cavity. An encapsulation material comprising a thixotropic fluorosiloxane material (51; 61) is applied in the cavity and completely covers the semiconductor device and the electrical connections. This structure enables the semiconductor device to withstand typical automotive contaminants, such as mild acids and gasoline, while also preventing erratic semiconductor device operation due to bubbles which may be drawn into the encapsulation material.
David J Schifferle from East Aurora, NY, age ~65 Get Report