Inventors:
Narsingh B. Singh - Ellicott City MD, US
Brian P. Wagner - Baltimore MD, US
David J. Knuteson - Linthicum MD, US
Michael E. Aumer - Laurel MD, US
Andre Berghmans - Owing Mills MD, US
Darren Thomson - Ellicott City MD, US
David Kahler - Arbutus MD, US
Assignee:
Northrop Grumman Systems Corporation - Los Angeles CA
International Classification:
H01L 29/08
US Classification:
257194, 257 12, 257 19, 257 24, 257 76, 257 77, 257190, 257191, 257192, 257195, 257E27012, 257E29246, 257E29247, 257E29248, 257E29249, 257E29251, 257E29252
Abstract:
A SiMC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC SiMC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).