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Sung W Hong

from King City, CA
Age ~64
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Also known as:
David W Hong, David P Hong, David S Hong, Myung Hong, David Phong, Hong W Sung
Related to:
Soo Jin Hong, 55Chung H Hong, 66Cho Y YuJon HongChun Chong, 56Kevin Hong
Connected to:
Adam S Hong, 45Ahn N Hong, 61Alison C Hong, 54Amelia Y Hong, 58Amy L Hong, 71Angelina M Hong, 38Annette C Hong, 67Anthony T Hong, 55Beck W Hong, 87Ben Hong, 61

Sung Hong Phones & Addresses

  • King City, CA
  • Pflugerville, TX
  • Pacific Grove, CA
  • Horseshoe Bend, AR
  • Sunnyvale, CA
  • New York, NY
  • Park City, UT
  • Heber City, UT
  • Seaside, CA
  • Travis, TX

Professional Records

Lawyers & Attorneys

Sung Hong Photo 1

Sung June Hong - Lawyer

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Address:
Nike Sports Korea
(220) 065-700x (Office)
Licenses:
New York - Delinquent 2005
Education:
Vanderbilt Law School
Sung Hong Photo 2

Sung Hong - Lawyer

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Specialties:
Msba Civil Litigation Section
Msba New Lawyers Section
Msba Solo Small Practice Experience
Hcba Real Property
ISLN:
1001132000
Admitted:
2021

Medicine Doctors

Sung Hong Photo 3

Dr. Sung J Hong, Sunnyvale CA - DDS (Doctor of Dental Surgery)

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Specialties:
Prosthodontics
Address:
500 E Remington Dr Suite 19, Sunnyvale, CA 94087
(408) 749-9888 (Phone), (408) 749-9289 (Fax)
Procedures:
Composite Fillings
Dental Bonding
Dental Bridges
Dental Crowns
Dental Implant Surgery
Denture Repair
Digital X-Ray (CDR)
Full Mouth Reconstruction
Lower Dentures
Porcelain Veneers
Restoration of Dental Implants
Scaling
Teeth Whitening
Upper Dentures
Conditions:
Chipped Tooth
Edentulism
Grinding of Teeth
Tooth Attrition
Tooth Decay
Tooth Loss
Languages:
English
Philosophy:
We specialize in the latest techniques for crowns, bridges, implant-supported restorations, cosmetic procedures, complete and partial dentures, complete mouth reconstruction, orthodontia, oral surgery, and periodontal (gum disease) treatment. We now also offer the latest in high-quality, proven dental technology - CEREC One-Visit Dentistry. It's the quickest, most comfortable, most attractive, and highest quality dental technology available.
Education:
Residency Hospital
Ucsf
Graduated: 1987
Residency Hospital
American College Of Prosthodontic
Graduated: 1992
Residency Hospital
International Congress Of Oral Implantology
Graduated: 1991
Residency Hospital
Usc
Graduated: 1981
Residency Hospital
Ma In Educational Psychology, Uop
Graduated: 1995
Sung Hong Photo 4

Sung W Hong, Sunnyvale CA - LAC

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Specialties:
Acupuncture
Address:
693 E Remington Dr Suite A, Sunnyvale, CA 94087
(408) 720-1247 (Phone), (408) 720-1757 (Fax)
Languages:
English
Sung Hong Photo 5

Sung J. Hong

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Specialties:
Pediatrics, Adolescent Medicine
Work:
Sung Jeen Hong MD
3000 W Olympic Blvd STE 304, Los Angeles, CA 90006
(213) 380-1122 (phone), (213) 480-4800 (fax)
Education:
Medical School
Seoul Natl Univ, Coll of Med, Chongno Ku, Seoul, So Korea
Graduated: 1971
Conditions:
Acute Bronchitis
Acute Conjunctivitis
Atopic Dermatitis
Acute Pharyngitis
Acute Sinusitis
Languages:
English
Korean
Description:
Dr. Hong graduated from the Seoul Natl Univ, Coll of Med, Chongno Ku, Seoul, So Korea in 1971. He works in Los Angeles, CA and specializes in Pediatrics and Adolescent Medicine. Dr. Hong is affiliated with Childrens Hospital Los Angeles, Good Samaritan Hospital and Hollywood Presbyterian Medical Center.
Sung Hong Photo 6

Sung J. Hong

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Specialties:
Anesthesiology
Work:
St John Anesthesiologists PC
22101 Moross Rd, Grosse Pointe, MI 48236
(313) 343-3370 (phone), (313) 343-6862 (fax)
Education:
Medical School
University of Missouri, Columbia School of Medicine
Graduated: 1984
Languages:
English
Description:
Dr. Hong graduated from the University of Missouri, Columbia School of Medicine in 1984. He works in Detroit, MI and specializes in Anesthesiology. Dr. Hong is affiliated with St John Hospital & Medical Center.
Sung Hong Photo 7

Sung Shinn Hong

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Specialties:
Anesthesiology
Education:
Catholic University Of Korea (1967)
Sung Hong Photo 8

Sung Je Hong, Sunnyvale CA

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Specialties:
Dentist
Address:
500 E Remington Dr, Sunnyvale, CA 94087
Sung Hong Photo 9

Sung Wook Hong, Sunnyvale CA

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Specialties:
Acupuncturist
Address:
693 E Remington Dr, Sunnyvale, CA 94087

License Records

Sung H Hong

License #:
29668 - Expired
Category:
Health Care
Issued Date:
Apr 19, 1977
Effective Date:
Jan 1, 1901
Expiration Date:
Dec 31, 1979
Type:
Medical Doctor

Business Records

Name / Title
Company / Classification
Phones & Addresses
Sung Je Hong
President
Sung J. Hong, DDS, Ma, Inc
500 E Remington Dr, Sunnyvale, CA 94087
Sung Hong
Partner
Hong, Sung J DDS
Offices of Dentists
500 E Remington Dr #19, Sunnyvale, CA 94087
(408) 749-9888
Sung Hwan Hong
Director
ZOOMMA INC
4500 Steiner Rnch Blvd APT 1806, Austin, TX 78732
Sung G. Hong
Treasurer
Kolon Scen'a Incorporated
701 Brazos St, Austin, TX 78701
Sung J. Hong
Family And General Dentistry, Owner
California Dental Specialty Group
Specialized Dental Practitioners · Offices of Dentists
500 E Remington Dr, Sunnyvale, CA 94087
(408) 749-9888
Sung Je Hong
Sung Hong DDS,MA
Dentists · Oral Surgeons · Pediatric Dentist
500 E Remington Dr, Sunnyvale, CA 94087
(408) 749-9888
Sung M. Hong
President
Hacienda Cleaners
Sports · Garment Press/Cleaner's Agent Coin-Operated Laundry Drycleaning Plant · Dry Cleaning · Cleaners
5682 Stoneridge Dr, Pleasanton, CA 94588
5682 Stonerigde Dr, Pleasanton, CA 94588
(925) 463-8900, (925) 463-8901, (925) 463-8990
Sung Wook Hong
Secretary
CACTUS REAL ESTATE INC

Publications

Amazon

The Park Chung Hee Era: The Transformation of South Korea

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In 1961 South Korea was mired in poverty. By 1979 it had a powerful industrial economy and a vibrant civil society in the making, which would lead to a democratic breakthrough eight years later. The transformation took place during the years of Park Chung Hee's presidency. Park seized power in a cou...
Binding

Paperback

Pages

744

Publisher

Harvard University Press

ISBN #

0674072316

EAN Code

9780674072312

ISBN #

1

Prime French-Korean Dictionary : Revised Version

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Author

Ji-Yung Jung, Jae-Sung Hong

Binding

Imitation Leather

Publisher

Dong-A

ISBN #

8900115383

EAN Code

9788900115383

ISBN #

3

Bottle diet salad recipe

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PART 1 - Healing Light vegetable salad Vegetables, seaweed salad - celery dressing Fern Herb Salad - Onion Garlic Dressing Roasted vegetable salad - sesame dressing Vegetable Noodle Salad - Black Bean dressing Mini vegetable salad - kiwi dressing Do not roasted salad-dressing Mentaiko Chamnamul faci...
Author

Hong sung ran

Binding

Paperback

Publisher

42 media

EAN Code

8806391120219

ISBN #

6

Contemporary Korean Architecture: Megacity Network

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A megacity is a metropolitan area with a population of 10 million or more people--some definitions also include density in the equation, requiring more than 2,000 people per square kilometer. Seoul, Korea, more than qualifies: with 10.3 million people living in an area smaller than New York City, it...
Binding

Hardcover

Pages

272

Publisher

Jovis

ISBN #

3939633372

EAN Code

9783939633372

ISBN #

5

Naming God in Korea: The Case of Protestant Christianity

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Book annotation not available for this title.Title: Naming God in KoreaAuthor: Hong, Sung-wookPublisher: Wipf & Stock PubPublication Date: 2009/04/01Number of Pages: 170Binding Type: PAPERBACKLibrary of Congress:

Author

Sung-Wook Hong

Binding

Paperback

Pages

184

Publisher

Wipf & Stock Pub

ISBN #

160608626X

EAN Code

9781606086261

ISBN #

2

Isbn (Books And Publications)

Building a Power House

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Author

Sung Woong Hong

ISBN #

8981820023

Us Patents

Dielectric-Metal Stack For 3D Flash Memory Application

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US Patent:
20180247808, Aug 30, 2018
Filed:
Apr 23, 2018
Appl. No.:
15/959646
Inventors:
- Santa Clara CA, US
Nagarajan RAJAGOPALAN - Santa Clara CA, US
Sung Hyun HONG - Fremont CA, US
Bok Hoen KIM - San Jose CA, US
Mukund SRINIVASAN - Fremont CA, US
International Classification:
H01L 21/02
H01L 27/11582
H01L 27/11556
Abstract:
A method is provided for forming a stack of film layers for use in 3D memory devices. The method starts with providing a substrate in a processing chamber of a deposition reactor. Then one or more process gases suitable for forming a dielectric layer are supplied into the processing chamber of the deposition reactor forming a dielectric layer on the substrate. Then one or more process gases suitable for forming a metallic layer are supplied into the processing chamber of the deposition reactor forming a metallic layer on the dielectric layer. Then one or more process gases suitable for forming a metallic nitride adhesion layer are supplied into the processing chamber of the deposition reactor forming a metallic nitride adhesion layer on the metallic layer. The sequence is then repeated to form a desired number of layers.

Conformal Amorphous Carbon For Spacer And Spacer Protection Applications

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US Patent:
20170170015, Jun 15, 2017
Filed:
Feb 14, 2017
Appl. No.:
15/432605
Inventors:
- Santa Clara CA, US
Deenesh PADHI - Sunnyvale CA, US
Sung Hyun HONG - Fremont CA, US
Bok Hoen KIM - San Jose CA, US
Derek R. WITTY - Fremont CA, US
International Classification:
H01L 21/033
H01L 21/311
H01L 21/3213
H01L 21/02
Abstract:
A method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber is provided. The method generally includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a nitrogen-doped amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the nitrogen-doped amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the nitrogen-doped amorphous carbon layer, and removing the patterned features from the substrate.

Conformal Amorphous Carbon For Spacer And Spacer Protection Applications

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US Patent:
20150279676, Oct 1, 2015
Filed:
Jun 11, 2015
Appl. No.:
14/736848
Inventors:
- Santa Clara CA, US
Deenesh PADHI - Sunnyvale CA, US
Sung Hyun HONG - Fremont CA, US
Bok Hoen KIM - San Jose CA, US
Derek R. WITTY - Fremont CA, US
International Classification:
H01L 21/033
H01L 21/311
H01L 21/02
Abstract:
A method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber is provided. The method generally includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a nitrogen-doped amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the nitrogen-doped amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the nitrogen-doped amorphous carbon layer, and removing the patterned features from the substrate.

Dielectric-Metal Stack For 3D Flash Memory Application

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US Patent:
20150206757, Jul 23, 2015
Filed:
Jan 7, 2015
Appl. No.:
14/591609
Inventors:
- Santa Clara CA, US
Nagarajan Rajagopalan - Santa Clara CA, US
Sung Hyun Hong - Fremont CA, US
Bok Hoen Kim - San Jose CA, US
Mukund Srinivasan - Fremont CA, US
International Classification:
H01L 21/28
H01L 27/115
Abstract:
A method is provided for forming a stack of film layers for use in 3D memory devices. The method starts with providing a substrate in a processing chamber of a deposition reactor. Then one or more process gases suitable for forming a dielectric layer are supplied into the processing chamber of the deposition reactor forming a dielectric layer on the substrate. Then one or more process gases suitable for forming a metallic layer are supplied into the processing chamber of the deposition reactor forming a metallic layer on the dielectric layer. Then one or more process gases suitable for forming a metallic nitride adhesion layer are supplied into the processing chamber of the deposition reactor forming a metallic nitride adhesion layer on the metallic layer. The sequence is then repeated to form a desired number of layers.

Conformal Amorphous Carbon For Spacer And Spacer Protection Applications

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US Patent:
20140349490, Nov 27, 2014
Filed:
Jan 16, 2013
Appl. No.:
14/371989
Inventors:
- Santa Clara CA, US
Deenesh Padhi - Sunnyvale CA, US
Sung Hyun Hong - Fremont CA, US
Bok Hoen Kim - San Jose CA, US
Derek R. Witty - Fremont CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
H01L 21/033
US Classification:
438763
Abstract:
A method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber is provided. The method generally includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a nitrogen-doped amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the nitrogen-doped amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the nitrogen-doped amorphous carbon layer, and removing the patterned features from the substrate.
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Sung W Hong from King City, CA, age ~64 Get Report