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David Hetzer Phones & Addresses

  • 2045 Cardiff Rd, Schenectady, NY 12303
  • 4213 Court Royale APT 10, Schenectady, NY 12304
  • 2198 Esperanca Ave, Santa Clara, CA 95054 (408) 988-8488
  • Grove City, PA
  • Milpitas, CA
  • Boise, ID
  • 1775 Milmont Dr APT T207, Milpitas, CA 95035

Work

Position: Executive, Administrative, and Managerial Occupations

Education

Degree: Associate degree or higher

Resumes

Resumes

David Hetzer Photo 1

David Hetzer

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David Hetzer Photo 2

David Hetzer

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Location:
United States
David Hetzer Photo 3

David Hetzer

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Location:
Albany, New York Area
Industry:
Semiconductors
David Hetzer Photo 4

David Hetzer

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Location:
United States

Publications

Us Patents

High-Precision Dispense System With Meniscus Control

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US Patent:
20180047563, Feb 15, 2018
Filed:
Aug 11, 2017
Appl. No.:
15/675385
Inventors:
- Tokyo, JP
Rodney L. Robison - East Berne NY, US
Ronald Nasman - Averill Park NY, US
David Travis - Albany NY, US
James Grootegoed - Wynantskill NY, US
David Hetzer - Schenectady NY, US
Lior Huli - Delmar NY, US
Joshua S. Hooge - Austin TX, US
International Classification:
H01L 21/027
H01L 21/02
H01L 21/66
H01L 21/67
Abstract:
Techniques herein include a bladder-based dispense system using an elongate bladder configured to selectively expand and contract to assist with dispense actions. This dispense system compensates for filter-lag, which often accompanies fluid filtering for microfabrication. This dispense system also provides a high-purity and high precision dispense unit. A meniscus sensor monitors a position of a meniscus of process fluid at a nozzle. The elongate bladder unit is used to maintain a position of the meniscus at a particular location by selectively expanding or contracting the bladder, thereby moving or holding a meniscus position. Expansion of the elongate bladder is also used for a suck-back action after completing a dispense action.

Euv Resist Sensitivity Reduction

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US Patent:
20140315135, Oct 23, 2014
Filed:
Apr 17, 2013
Appl. No.:
13/865138
Inventors:
- Tokyo, JP
DAVID HETZER - SCHENECTADY NY, US
International Classification:
G03F 7/40
US Classification:
430325
Abstract:
A method for patterning a substrate is described. The method includes forming a layer of radiation-sensitive material on a substrate, and preparing a pattern in the layer of radiation-sensitive material using a lithographic process, wherein the pattern is characterized by a critical dimension (CD) and a roughness. Following the preparation of the pattern in the layer of radiation-sensitive material, the method further includes performing a CD slimming process to reduce the CD to a reduced CD, and performing a vapor smoothing process to reduce the roughness to a reduced roughness.

Track Processing To Remove Organic Films In Directed Self-Assembly Chemo-Epitaxy Applications

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US Patent:
20140273472, Sep 18, 2014
Filed:
Mar 13, 2014
Appl. No.:
14/208160
Inventors:
- Tokyo, JP
David Hetzer - Schenectady NY, US
Lior Huli - Delmar NY, US
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
H01L 21/311
US Classification:
438702, 438704
Abstract:
A method is provided for preparing a prepatterned substrate for use in DSA integration. In one example, the method includes removing a radiation-sensitive material pattern overlying a patterned cross-linked polystyrene copolymer layer by a) exposure to a solvent vapor, b) exposure to a liquid solvent, and c) repeating steps a)-b) until the radiation-sensitive material pattern is completely removed. In another example, the method includes removing a neutral layer by affecting removal of an underlying patterned radiation-sensitive material layer, which includes swelling the neutral layer; and removing the radiation-sensitive material pattern and the swollen neutral layer in portions by exposing the swollen layer and pattern to a developer solution. Swelling the neutral layer includes a) exposure to a solvent vapor; b) exposure to a liquid solvent; and c) repeating steps a)-b) until the neutral layer is sufficiently swollen to allow penetration of the developing solution through the swollen neutral layer.
David R Hetzer from Schenectady, NY, age ~49 Get Report