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Daniel P Resler

from Carlisle, MA
Age ~66
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Also known as:
Daniel Presler, Richard P Ressler
Phone and address:
120 Woodridge Rd, Carlisle, MA 01741
(978) 287-5856
Related to:
Kaylee L Pohlmeyer, 34Sandra Caron, 67Louis Fontana, 53Steven Roberto, 55Jennifer Sanborn, 48Jennifer Brockstedt
Connected to:
Ann M Resler, 60Carolyn A Resler, 91Cathy J Resler, 71Ian S Resler, 47Joe F Resler, 76Linda Y Resler, 63Michael Resler, 59Natalie N Resler, 28Rebecca L Resler, 49Ruth Resler, 61

Daniel Resler Phones & Addresses

  • 120 Woodridge Rd, Carlisle, MA 01741 (978) 287-5856
  • Allston, MA
  • Wilmington, MA
  • Woburn, MA
  • 120 Woodridge Rd, Carlisle, MA 01741

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Lawyers & Attorneys

Daniel Resler Photo 1

Daniel Resler - Lawyer

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ISLN:
1001247476
Admitted:
2022

Publications

Us Patents

Interference Lithography Using Holey Fibers

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US Patent:
6522433, Feb 18, 2003
Filed:
Apr 4, 2001
Appl. No.:
09/826470
Inventors:
Adam F. Kelsey - Waltham MA
Mark A. Leclerc - Epping NH
Daniel P. Resler - Carlisle MA
Assignee:
Optical Switch Corporation - Richardson TX
International Classification:
G03H 100
US Classification:
359 34, 359 35, 359577, 359900, 385125
Abstract:
A method and apparatus for interference lithography utilize a fiber having a cladding region with axially formed holes surrounding a core region. The fiber emits an optical signal to perform interference lithography. A number of alternative variations in the size and arrangement of axially formed holes produces fibers having characteristics particularly adapted for receiving, communicating, and emitting optical signals for interference lithography.

Hermetic Liquid Crystal Cell And Sealing Technique

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US Patent:
8031319, Oct 4, 2011
Filed:
May 29, 2009
Appl. No.:
12/474643
Inventors:
Michael R. Benoit - Holden MA, US
Daniel P. Resler - Carlisle MA, US
Steven R. Collins - Lexington MA, US
Robert D. O'Shea - Harvard MA, US
Assignee:
Raytheon Company - Waltham MA
International Classification:
G02F 1/1339
US Classification:
349153, 349154, 349187, 349190, 428153
Abstract:
Described herein are structures and techniques for providing an LC cell having a hermetically sealed cover disposed over a fill hole provided in a superstrate. The superstrate and cover have adhesion layers disposed thereon. Solder is disposed or otherwise provided around the fill hole (e. g. either on the cover or the superstrate or as a separate piece). The cover is then disposed over the fill hole and the solder is reflowed to form the hermetic seal over the fill hole.

Gallium Nitride For Liquid Crystal Electrodes

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US Patent:
8268707, Sep 18, 2012
Filed:
Jun 17, 2010
Appl. No.:
12/817421
Inventors:
Daniel P. Resler - Carlisle MA, US
William E. Hoke - Wayland MA, US
Assignee:
Raytheon Company - Waltham MA
International Classification:
H01L 21/20
H01L 21/36
H01L 31/20
US Classification:
438483, 438455, 257194, 257E29246
Abstract:
Described herein is a liquid crystal (LC) device having Gallium Nitride HEMT electrodes. The Gallium Nitride HEMT electrodes can be grown on a variety of substrates, including but not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer), and spinel. Also described is a structure provided from GaN HEMT grown on large area silicon substrates and transferred to another substrate with appropriate properties for OPA devices. Such substrates include, but are not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer), and spinel. The GaN HEMT structure includes an AlN interlayer for improving the mobility of the structure.

Gallium Nitride For Liquid Crystal Electrodes

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US Patent:
20120299012, Nov 29, 2012
Filed:
Aug 10, 2012
Appl. No.:
13/572157
Inventors:
Daniel P. Resler - Carlisle MA, US
William E. Hoke - Wayland MA, US
Assignee:
RAYTHEON COMPANY - Waltham MA
International Classification:
H01L 29/20
H01L 29/205
US Classification:
257 76, 257E29089, 257E29091
Abstract:
Described herein is a liquid crystal (LC) device having Gallium Nitride HEMT electrodes. The Gallium Nitride HEMT electrodes can be grown on a variety of substrates, including but not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium flouride buffer layer), and spinel. Also described is a structure provided from GaN HEMT grown on large area silicon substrates and transferred to another substrate with appropriate properties for OPA devices. Such substrates include, but are not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer), and spinel. The GaN HEMT structure includes an AlN interlayer for improving the mobility of the structure.

Deflector For An Optical Beam

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US Patent:
49647016, Oct 23, 1990
Filed:
Oct 4, 1988
Appl. No.:
7/253021
Inventors:
Terry A. Dorschner - Newton Centre MA
Daniel P. Resler - Wilmington MA
Assignee:
Raytheon Company - Lexington MA
International Classification:
G02F 113
US Classification:
350336
Abstract:
An optical beam phase shifter includes a liquid crystal cell having an optically-transparent common electrode on a first window and a multiplicity of parallel stripe electrodes on the second window. A multiplicity of control signals are applied between the individual stripe electrodes and the common electrode, thereby creating local variations of the refractive index of the liquid crystal molecules, which variations cause differential phase shifts across the cross section of a light beam incident thereon. The control signals are applied to contact pads affixed to an external surface of the liquid crystal cell, which contact pads underlie a plurality of the stripe electrodes. A multiplicity of conductors extend through the second window to couple the control signals to the stripe electrodes. In the first embodiment, the stripe electrodes are optically-transparent, and the incident beam is reflected from the contact pads. In a second embodiment, the stripe electrodes are reflective, and the incident beam is reflected therefrom.

Optical Beam Steerer Having Subaperture Addressing

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US Patent:
50937405, Mar 3, 1992
Filed:
Feb 28, 1991
Appl. No.:
7/662094
Inventors:
Terry A. Dorschner - Newton Centre MA
Daniel P. Resler - Wilmington MA
Assignee:
Raytheon Company - Lexington MA
International Classification:
G02F 1133
US Classification:
359 88
Abstract:
A practical means for electrically addressing the extremely large number and high density of phase shifters needed for operation of an optical phased-array beam steerer. The array of phase shifters is divided into identical subarrays which completely fill an optical aperture. All subarrays are connected electrically in parallel by electrically interconnecting corresponding electrodes of each subarray. Thus, the number of external electrical leads required for addressing the full array is reduced to the number of phase shifters in a signle subarray.

Liquid Crystal Cell Window

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US Patent:
48822353, Nov 21, 1989
Filed:
Mar 2, 1988
Appl. No.:
7/162922
Inventors:
Daniel P. Resler - Wilmington MA
Assignee:
Raytheon Company - Lexington MA
International Classification:
G02F 113
B32B 1504
US Classification:
428642
Abstract:
An optical time delay unit for use in an optical phased array beam-steering system includes a switchable polarization rotator in conjunction with Brewster plates and mirrors to form electrically-selectable optical paths of different lengths. The switchable polarization rotator is aligned with the optical beam and is responsive to a control signal for varying the polarization of light passing therethrough. The Brewster plates receive the light passing through the first polarization rotator and are transmissive to a first polarization and reflective of a second. The transmissive and reflective paths are of different lengths, and are recombined at a second Brewster plate. The original polarization may be restored by a second polarization rotator. A plurality of time delay units may be cascaded to permit selection from among many paths of various lengths. In a preferred embodiment, the polarization rotators include liquid crystal cells having nematic phase molecules.

Liquid Crystal Control Structure, Tip-Tilt-Focus Optical Phased Array And High Power Adaptive Optic

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US Patent:
20150146139, May 28, 2015
Filed:
May 24, 2013
Appl. No.:
14/404787
Inventors:
- Waltham MA, US
Terry A. Dorschner - Marlborough MA, US
Amanda J. Kirchner - Worcester MA, US
Steven R. Collins - Lexington MA, US
Daniel P. Resler - Carlisle MA, US
Assignee:
Raytheon Company - Waltham MA
International Classification:
G02F 1/1334
G02F 1/29
G02F 1/1343
US Classification:
349 88
Abstract:
A transmissive liquid crystal (LC) control structure comprising: a superstrate () having a first surface () having a GaN HEMT structure disposed thereon to provide a conductor on the first surface of said superstrate; a substrate () having a first surface disposed over and spaced apart from the first surface of said superstrate and having a GaN HEMT structure () disposed thereon to provide a conductor on the first surface of said substrate and wherein the GaN HEMT structure on one of the superstrate and substrate surfaces are patterned into individual electrodes; a polymer network liquid crystal (PNLC) () disposed in the space between the first surface of said superstrate and the first surface of said substrate; and a control circuit coupled to the individual electrodes.
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Daniel P Resler from Carlisle, MA, age ~66 Get Report