Professional Records
License Records
Daniel Kai Fu Tam
License #:
203748 - Active
Issued Date:
May 16, 2003
Renew Date:
Nov 1, 2015
Expiration Date:
Oct 31, 2017
Type:
Architect
Daniel Fu Phones & Addresses
-
Dallas, GA
-
16673 92Nd St, Miami, FL 33196 (305) 387-4864 (305) 387-7031
-
Hialeah, FL
-
Trabuco Canyon, CA
-
Dublin, OH
-
PO Box 161081, Hialeah, FL 33016
Work
Position:
Sales Occupations
Education
Degree:
Bachelor's degree or higher
Public records
Vehicle Records
Daniel Fu
View pageAddress:
16673 SW 92 St, Miami, FL 33196
Phone:
(305) 387-4864
VIN:
2GCEC13V271118947
Make:
CHEVROLET
Model:
SILVERADO 1500 CL
Year:
2007
Business Records
Name / Title
Company / Classification
Phones & Addresses
President
ASN GROUP CORPORATION
Nonclassifiable Establishments · Nonclassified Establishment
Nonclassifiable Establishments · Nonclassified Establishment
20875 Currier Rd, Walnut, CA 91789
President
NU-PACK INC
19745 Colima Rd 1-237, Rowland Heights, CA 91748
20875 Currier Rd, Walnut, CA 91789
20875 Currier Rd, Walnut, CA 91789
President
AMERICAN PERSONAL CARE PRODUCTS INSTITUTE
19049 E Colima Rd, Rowland Heights, CA 91748
19049 Colima Rd, Whittier, CA 91748
19049 Colima Rd, Whittier, CA 91748
President
SUPER PACKAGING, INC
20875 Currier Rd, Walnut, CA 91789
President
DFA INDUSTRIES CORP
4102 W Vly Blvd, Walnut, CA 91789
Manager, Principal
Daniel's Painting Contractor, LLC
Painting/Paper Hanging Contractor
Painting/Paper Hanging Contractor
5217 SW 141 Ave, Miami, FL 33175
16673 SW 92 St, Miami, FL 33196
PO Box 565921, Miami, FL 33256
16673 SW 92 St, Miami, FL 33196
PO Box 565921, Miami, FL 33256
Publications
Us Patents
Mosfet-Fused Nonvolatile Read-Only Memory Cell (Mofrom)
View pageUS Patent:
6949423, Sep 27, 2005
Filed:
Nov 26, 2003
Appl. No.:
10/723004
Inventors:
Pingxi Ma - Irvine CA, US
Daniel Fu - Saratoga CA, US
Daniel Fu - Saratoga CA, US
Assignee:
Oakvale Technology - Saratoga CA
International Classification:
H01L023/58
US Classification:
438201, 438130, 438211, 438257, 438470, 257 48, 257390, 257391, 257497, 257498
Abstract:
With directly biasing drain to source in a floating-gate N-MOSFET, a new MOSFET-fused nonvolatile ROM cell (MOFROM) is provided by tunneling-induced punch through of the drain junction to the source. The MOFROM is completely compatible with the mainstream standard CMOS process. The standard MOSFET presents an “OFF” state before the burning and an “ON” state with a stable low-resistance path after the burning.