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Cameron D Danesh

from Belmont, CA
Age ~37
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Also known as:
Cameron Dean Danesh, Danesh Cameron
Related to:
Jamiel R Danesh, 48Ali NasseriOdis Selph, 79Corey Cleric, 58Lou Cleric, 89Kyle Cleric, 32Sara Burroughs, 61
Connected to:
Alice Danesh, 36Ehsan R Danesh, 44Farhad Danesh, 57Fatemeh Danesh, 59Irving S Danesh, 69Joshua S Danesh, 34Manouchehr M Danesh, 76Navid Danesh, 37Pilita M Danesh, 47Sadegh S Danesh, 87

Cameron Danesh Phones & Addresses

  • Belmont, CA
  • Los Altos Hills, CA
  • Los Angeles, CA
  • San Luis Obispo, CA
  • Pleasanton, CA

Resumes

Resumes

Cameron Danesh Photo 1

Principal Process Engineer

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Location:
10885 west Loyola Dr, Los Altos Hills, CA 94024
Industry:
Higher Education
Work:
Glo-Usa
Device Engineer
Ucla Feb 2014 - Sep 2018
Doctoral Candidate Researcher
Ucla Sep 2014 - Apr 2018
Graduate Teaching Fellow
Glo-Usa Jul 2013 - Aug 2013
Characterization and Microled Modeling
Yale University Jul 2012 - Aug 2012
Polymer Physics Visiting Researcher
Education:
University of California, Los Angeles 2013 - 2018
Doctorates, Doctor of Philosophy, Materials Science, Engineering, Philosophy California Polytechnic State University - San Luis Obispo 2007 - 2013
Master of Science, Masters, Bachelors, Bachelor of Science California Polytechnic State University - San Luis Obispo 2013
Master of Science, Masters, Bachelors, Bachelor of Science, Chemistry
Skills:
Materials Science
Characterization
Data Analysis
Signal Processing
Scanning Electron Microscopy
Physics
Sem
Fluorescence Microscopy
Minitab
Microsoft Sql Server
Matlab
Ni Labview
Labview
Python
Afm
Colorimetry
Coatings Technology
X Ray Diffractometry
Small Angle X Ray Scattering
Reliability Engineering
Dynamic Light Scattering
Microfabrication
Probe Station
Semiconductor Device
Photolithography
Mems
Layout Design
Ceramic Analysis
Carbon Nanotubes
Electrochemical Engineering
Synopsys
Synopsys Tools
Comsol
Chemical Vapor Deposition
Lithography
Electron Beam Lithography
Nanoimprint Lithography
Optical Microscopy
E Beam Evaporation
Device Characterization
Focused Ion Beam
Dry Etch
Semiconductor Failure Analysis
Lighttools
Jmp
Gan
Cameron Danesh Photo 2

Cameron Danesh

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Publications

Us Patents

Led Chip-To-Chip Vertically Launched Optical Communications With Optical Fiber

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US Patent:
20220286211, Sep 8, 2022
Filed:
Mar 7, 2022
Appl. No.:
17/653723
Inventors:
Bardia Pezeshki - Mountain View CA, US
Robert Kalman - Mountain View CA, US
Alexander Tselikov - Mountain View CA, US
Cameron Danesh - Mountain View CA, US
International Classification:
H04B 10/80
G02B 6/42
G02B 6/43
G02B 6/12
Abstract:
Multi-chip modules in different semiconductor packages may be optically data coupled by way of LEDs and photodetectors linked by a multicore fiber. The multicore fiber may pass through apertures in the semiconductor packages, with an array of LEDs and photodetectors in the semiconductor package providing and receiving, respectively, optical signals comprised of data passed between the multi-chip modules.

P-Type Doping In Gan Leds For High Speed Operation At Low Current Desities

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US Patent:
20220181517, Jun 9, 2022
Filed:
Dec 3, 2021
Appl. No.:
17/542201
Inventors:
Bardia Pezeshki - Mountain View CA, US
Cameron Danesh - Mountain View CA, US
International Classification:
H01L 33/06
H01L 33/02
H04B 10/61
H04B 10/25
H01L 33/32
Abstract:
A GaN based LED, with an active region of the LED containing one or more quantum wells (QWs), with the QWs separated by higher energy barriers, with the barriers doped, may be part of an optical communications system.

P-Type Doping In Gan Leds For High Speed Operation At Low Current Desities

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US Patent:
20220181518, Jun 9, 2022
Filed:
Dec 3, 2021
Appl. No.:
17/542271
Inventors:
Bardia Pezeshki - Mountain View CA, US
Cameron Danesh - Mountain View CA, US
International Classification:
H01L 33/06
H01L 33/32
H04B 10/60
Abstract:
A GaN based LED, with an active region of the LED containing one or more quantum wells (QWs), with the QWs separated by higher energy barriers, with some of the barriers doped and some of the barriers not doped, may be driven at high data rates with low drive current densities. Preferably the barriers that are not doped are the barriers closest to one side of a p region or an n region of the LED. With Mg doping, preferably the barriers that are not doped are the barriers closest to the p region of the LED.

Separate Optoelectronic Substrate

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US Patent:
20230129843, Apr 27, 2023
Filed:
Oct 27, 2022
Appl. No.:
18/050258
Inventors:
Robert Kalman - Mountain View CA, US
Yong Ma - Mountain View CA, US
Bardia Pezeshki - Mountain View CA, US
Alexander Tselikov - Mountain View CA, US
Cameron Danesh - Mountain View CA, US
International Classification:
G02B 6/42
H01L 31/173
Abstract:
A parallel optical interconnect having an optoelectronic substrate connected to a transceiver electronics substrate is disclosed. The optoelectronic substrate may hold optical transmitters and receivers and be electrically connected to the transceiver electronics substrate that may hold transmitter and receiver circuitries. The two substrates may be electrically connected with each other by inter-substrate interconnects, and the optoelectronic substrate may have through-substrate vias connecting the transmitters and receivers to the inter-substrate interconnects.

Microled Parallel Optical Interconnects

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US Patent:
20230054560, Feb 23, 2023
Filed:
Aug 17, 2022
Appl. No.:
17/820483
Inventors:
Robert Kalman - Mountain View CA, US
Bardia Pezeshki - Mountain View CA, US
Alexander Tselikov - Mountain View CA, US
Cameron Danesh - Mountain View CA, US
International Classification:
G02B 6/42
Abstract:
Parallel optical interconnects may be used to transmit signals produced by integrated circuits. A parallel optical interconnect may be in the form of a multicore optical fiber and one or more optical coupling assemblies optically connecting a first optical transceiver array and a second optical transceiver array. The multicore optical fiber may have multiple fiber elements with each having a core surrounded by cladding, and the one or more optical coupling assemblies may have refractive and/or reflective elements. In this way, light produced by one transceiver array may be transmitted through the multicore optical fiber and be received by the other transceiver array.

Coherent Fiber Bundle Parallel Optical Links

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US Patent:
20230020634, Jan 19, 2023
Filed:
Sep 27, 2022
Appl. No.:
17/935699
Inventors:
- Mountain View CA, US
Bardia Pezeshki - Mountain View CA, US
Alexander Tselikov - Mountain View CA, US
Cameron Danesh - Mountain View CA, US
International Classification:
H04B 10/50
H04B 10/25
H04B 10/40
G02B 6/04
Abstract:
A coherent fiber bundle may be used to optically connect an array of microLEDs to an array of photodetectors in an optical communication system.

Coherent Fiber Bundle Parallel Optical Links

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US Patent:
20210376932, Dec 2, 2021
Filed:
Jun 1, 2021
Appl. No.:
17/335939
Inventors:
Robert Kalman - Mountain View CA, US
Bardia Pezeshki - Mountain View CA, US
Alexander Tselikov - Mountain View CA, US
Cameron Danesh - Mountain View CA, US
International Classification:
H04B 10/50
G02B 6/04
H04B 10/40
H04B 10/25
Abstract:
A coherent fiber bundle may be used to optically connect an array of microLEDs to an array of photodetectors in an optical communication system.

Embedding Leds With Waveguides

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US Patent:
20210356662, Nov 18, 2021
Filed:
May 18, 2021
Appl. No.:
17/323625
Inventors:
Robert Kalman - Mountain View CA, US
Bardia Pezeshki - Mountain View CA, US
Alexander Tselikov - Mountain View CA, US
Cameron Danesh - Mountain View CA, US
International Classification:
G02B 6/122
H01L 33/60
Abstract:
A microLED may be used to generate light for intra-chip or inter-chip communications. The microLED, or an active layer of the microLED, may be embedded in a waveguide. The waveguide may include a lens.
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Cameron D Danesh from Belmont, CA, age ~37 Get Report