Daisy Jian Phones & Addresses
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1060 Renee Ct, San Jose, CA 95120 (408) 323-9813
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Fresno, CA
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Sunnyvale, CA
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Santa Clara, CA
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El Cerrito, CA
Work
Position:
Professional/Technical
Education
Degree:
Associate degree or higher
Emails
d***n@aol.com
Publications
Us Patents
Wide-Range Glitch-Free Asynchronous Clock Switch
View pageUS Patent:
20140062548, Mar 6, 2014
Filed:
Sep 6, 2012
Appl. No.:
13/604795
Inventors:
Changku Hwang - Santa Clara CA, US
Sebastian Turullols - Santa Clara CA, US
Daisy Jian - Santa Clara CA, US
Ali Vahidsafa - Santa Clara CA, US
Sebastian Turullols - Santa Clara CA, US
Daisy Jian - Santa Clara CA, US
Ali Vahidsafa - Santa Clara CA, US
International Classification:
H03L 7/00
H03L 7/06
H03L 7/06
US Classification:
327155, 327161
Abstract:
Embodiments include systems and methods for asynchronous, glitch-free clock switching across a wide range of clock frequencies with minimal clock down time. Embodiments effectively provide two stages of synchronization across two independent clock domains. In a first synchronization stage, a received, asynchronous clock select signal is translated into a synchronized clock select signal that is effectively synchronous with respect to a first clock domain and is still effectively asynchronous with respect to a second clock domain. In a second synchronization stage, the synchronized clock select signal is resynchronized so as to be effectively synchronous with respect to the second clock domain. The synchronized select signal can be used to disable the clock of the first clock domain, and the resynchronized clock select signal can be used to enable the clock of the second clock domain.
High Accuracy, Compact On-Chip Temperature Sensor
View pageUS Patent:
20160061667, Mar 3, 2016
Filed:
Oct 27, 2014
Appl. No.:
14/524392
Inventors:
- Redwood City CA, US
Ha Pham - San Jose CA, US
Daisy Jian - San Jose CA, US
Sebastian Turullols - Los Altos CA, US
Ha Pham - San Jose CA, US
Daisy Jian - San Jose CA, US
Sebastian Turullols - Los Altos CA, US
International Classification:
G01K 7/00
G01R 19/10
G01R 19/25
G01R 19/10
G01R 19/25
Abstract:
Embodiments of a temperature sensing apparatus are disclosed. The apparatus may include a voltage generator and circuitry. The voltage generator may generate a first voltage level and a second voltage level dependent on an operating temperature. In response to a given change in the operating temperature, the first and second voltage levels may change, with the second voltage level changing by a different amount than the first voltage level. The voltage generator may generate a third voltage level. The circuitry may measure the first voltage level, the second voltage level, and the third voltage level, and may calculate the operating temperature dependent on a ratio of a difference between the first voltage level and the second voltage level and the third voltage level.