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Cris Lawrence Phones & Addresses

  • 200 N Wynnewood Ave APT B409, Wynnewood, PA 19096 (610) 747-0731
  • 115 Montgomery Ave, Bala Cynwyd, PA 19004 (610) 660-8627 (610) 747-0731
  • 118 Montgomery Ave, Bala Cynwyd, PA 19004 (610) 747-0731
  • 149 Willowdale Dr, Frederick, MD 21702
  • 2000 Baltimore Rd, Rockville, MD 20851 (301) 309-2520
  • Allentown, PA
  • Edison, NJ

Work

Company: University of pennsylvania Nov 2011 Address: Computational Biology and Informatics Laboratory Position: Senior application developer

Education

Degree: M.S.I.S. School / High School: Drexel University 2000 to 2002 Specialities: Information Systems

Skills

Operating Systems • Sun Certified Java Programmer • Web Servers • SOA • CSS • Training

Industries

Higher Education

Resumes

Resumes

Cris Lawrence Photo 1

Senior Application Developer At University Of Pennsylvania

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Position:
Senior Application Developer at University of Pennsylvania
Location:
Greater Philadelphia Area
Industry:
Higher Education
Work:
University of Pennsylvania - Computational Biology and Informatics Laboratory since Nov 2011
Senior Application Developer

Villanova University Mar 2007 - Oct 2011
Application Development Manager

Whittman-Hart Jul 2006 - Oct 2006
Java Developer

Math Forum @ Drexel University Nov 2005 - Jul 2006
Software Engineer

ATX Communications Sep 2003 - Nov 2005
Senior Web Developer
Education:
Drexel University 2000 - 2002
M.S.I.S., Information Systems
Lehigh University 1988 - 1992
Ph.D., Chemistry
Stanford University 1977 - 1979
M.S.E.E., Electrical Engineering
Monmouth University 1973 - 1977
B.S.E.E., Electronic Engineering
Skills:
Operating Systems
Sun Certified Java Programmer
Web Servers
SOA
CSS
Training

Publications

Us Patents

Method For Reducing Mobile Ion Contamination In Semiconductor Integrated Circuits

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US Patent:
49803018, Dec 25, 1990
Filed:
Feb 23, 1990
Appl. No.:
7/485804
Inventors:
Alain S. Harrus - Philadelphia PA
Graham W. Hills - Salisbury PA
Cris W. Lawrence - Allentown PA
Morgan J. Thoma - Macungie PA
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01L 21306
US Classification:
437 12
Abstract:
In a method of fabricating semiconductor integrated circuits, the effects of mobile ion contamination in a dielectric layer which has been subjected to a source of mobile ion contamination, e. g. , reactive ion etching, is substantially eliminated by removing substantially only the topmost portion of the dielectric layer, e. g. , 10-15 nm of an 800 nm layer, promptly after performing the step which produced the source of contamination.
Cris W Lawrence from Wynnewood, PA, age ~70 Get Report