Chung S Kim

6994304, Feb 7, 2006

Dec 24, 2003

10/745772

Chung Han Kim - Fullerton CA, US
Jung Hee Kim - Chang-Li Dobong-Ku, Seoul, KR
Yeon Suk Kim - Chang-Li Dobong-Ku, Seoul, KR

A45D 19/04

248174, 248 373, 4012406, 40539, 40674

Disclosed is a utensil support apparatus constructed of paper and includes a main body and a utensil supporting section formed on the main body. The utensil supporting section is folded upwards along a lateral edge and a pair of outer sections formed on the utensil supporting sections is folded to prop the utensil supporting section. A detachable advertising section is formed on the main body for removal after use of the utensil support apparatus.

40953300, Jun 20, 1978

Jun 27, 1977

5/810143

Chung K. Kim - Lexington MA

Raytheon Company - Lexington MA

B01J 1700

29580

A process of forming a composite semiconductor integrated circuit by forming one or more epitaxial layers of semiconductor material on a semiconductor substrate, forming pedestals by etching partially through said epitaxial layers to form regions projecting from said substrate and etching through said epitaxial layers to form stress relieving channels in the substrate surrounding the pedestals. A thick layer of easily removable material such as an evaporated layer of chromium plus gold and a plated layer of gold is deposited of sufficient thickness to provide good mechanical support, and the substrate is removed by lapping, grinding or etching until at least the stress relieving channels are exposed thereby forming separate semiconductor elements containing said epitaxial regions. An electrical contact layer is deposited across the surface of the remaining substrate and connected to a thermally conductive support which may be either conductive, such as a block of copper, or insulating, such as a block of beryllium oxide, the support material surrounding the epitaxial regions and completing the construction of the device by forming ohmic and/or rectifying contacts to one or more layers of said epitaxial regions.

40358305, Jul 12, 1977

Nov 17, 1975

5/632324

Chung K. Kim - Lexington MA

Raytheon Company - Lexington MA

H01L 2348
H01L 3902
H01L 2302

357 67

A process of forming a composite semiconductor integrated circuit by forming one or more epitaxial layers of semiconductor material on a semiconductor substrate, forming pedestals by etching partially through said epitaxial layers to form regions projecting from said substrate and etching through said epitaxial layers to form stress relieving channels in the substrate surrounding the pedestals. A thick layer of easily removable material such as an evaporated layer of chromium plus gold and a plated layer of gold is deposited of sufficient thickness to provide good mechanical support, and the substrate is removed by lapping, grinding or etching until at least the stress relieving channels are exposed thereby forming separate semiconductor elements containing said epitaxial regions. An electrical contact layer is deposited across the surface of the remaining substrate and connected to a thermally conductive support which may be either conductive, such as a block of copper, or insulating, such as a block of beryllium oxide, the support material surrounding the epitaxial regions and completing the construction of the device by forming ohmic and/or rectifying contacts to one or more layers of said epitaxial regions.

39654370, Jun 22, 1976

Aug 26, 1974

5/500973

Chung Kyu Kim - Lexington MA

Raytheon Company - Lexington MA

H03F 310

330 34

A microwave semiconductor amplifier or oscillator system in which a semiconductor device has an avalanching region at a junction and a heat sink having a higher thermal conductivity than said avalanching region in close thermal contact with the said junction. The avalanching region has a width substantially less than ten times the thickness of said avalanching region but a length substantially greater than said width. The heat sink is made substantially wider than that of the avalanching region so that heat generated in the avalanching region during operation of the system and moving into the heat sink will have a substantial component thereof moving parallel to the junction, thereby decreasing the thermal resistance between the heat source and the heat sink and hence permitting an increased power output from the system. The thermal resistance between the avalanching region and the heat sink is further reduced by the use of a Schottky type junction in which a thin layer of platinum is deposited on gallium arsenide N type semiconductor material and a gold heat sink is deposited on the platinum layer.

40381579, Jul 26, 1977

Apr 16, 1976

5/677589

Chung K. Kim - Lexington MA
Yung L. Cho - Hauppauge NY

The United States of America as represented by the Secretary of the Air
Force - Washington DC

C25D 510
C25D 554

204 16

A method of hermetically sealing semiconductor devices utilizes a dielectric tube with a two step structure at one end. The tube is used to surround a semiconductor. The two step end of the tube is metallized. The other end of the tube is flat and is brazed onto a metal stud so that the semiconductor is in the center of the brazed joint. A metal lid is painted with a conductive material and then placed into a rim formed by the two step end. When the paint dries, a metal layer is electrodeposited at the top of the lid and tube.

40338100, Jul 5, 1977

Apr 29, 1976

5/681629

Chung Kyu Kim - Lexington MA

Raytheon Company - Lexington MA

H01L 21312

156656

A microwave semiconductor amplifier or oscillator system in which a semiconductor device has an avalanching region at a junction and a heat sink having a higher thermal conductivity than said avalanching region in close thermal contact with the said junction. The avalanching region has a width substantially less than ten times the thickness of said avalanching region but a length substantially greater than said width. The heat sink is made substantially wider than that of the avalanching region so that heat generated in the avalanching region during operation of the system and moving into the heat sink will have a substantial component thereof moving parallel to the junction, thereby decreasing the thermal resistance between the heat source and the heat sink and hence permitting an increased power output from the system. The thermal resistance between the avalanching region and the heat sink is further reduced by the use of a Schottky type junction in which a thin layer of platinum is deposited on gallium arsenide N type semiconductor material and a gold heat sink is deposited on the platinum layer.

45639337, Jan 14, 1986

Jan 26, 1984

6/575432

Chung C. Kim - Los Angeles CA

G09B 1502
G10D 108

84267

A dynamically illuminated guitar (10) for producing visual and sequential lighting effects on the guitar body (20) caused by spontaneous or deliberate hand and body movements of the guitarist and by external light sources. A plurality of light-emitting diodes (30) through (93) embedded into the guitar face and arranged in aesthetically pleasing designs serve as the display medium. A variety of different light display modes is selected by changing the orientation of the guitar (20) to cause a group of mercury tilt switches (120), (130), (140) to control the digital pulse format of an electronic pulse-forming circuit. Light-dependent resistors (160), (170) embedded on the guitar face further cause the guitar visual lighting display to be controlled by external variable lighting.

41433840, Mar 6, 1979

Feb 18, 1977

5/770130

Chung K. Kim - Lexington MA
Alfred J. Wheeler - Berlin MA

Raytheon Company - Lexington MA

H01L 2948
H01L 2906

357 15

A semiconductor device with active junction area determined by the surface of the floor of a hole etched into a body of semiconductor material. A body of highly doped semiconductor material is overlayed with two layers of semiconductor material of the same conductivity type. The layer in contact with the highly doped body is moderately doped while the upper layer is very lightly doped. A hole is etched through the top layer extending slightly into the moderately doped layer. A Schottky barrier contact is plated throughout the etched region. The total parasitic capacitance of such devices is much lower than that of prior art devices and the reverse breakdown characteristics are improved.