Chuan Chuan Chang

43148557, Feb 9, 1982

Dec 17, 1979

6/104379

Chuan C. Chang - Berkeley Heights NJ
Jitendra Kumar - Bridgewater NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

B08B 308
B08B 310

134 3

Contaminants that accumulate on test probes utilized to contact aluminum pads on integrated circuit chips cause the probe resistance to become unacceptably high. As disclosed herein, the contaminants (predominantly a mixture of aluminum and aluminum oxide) are substantially removed by immersing the probes in boiling water. Adding small quantities of phosphoric and/or hydrofluoric acids to the water further improves the cleaning action.

41446348, Mar 20, 1979

Jun 28, 1977

5/810771

Chuan C. Chang - Berkeley Heights NJ
Robert P. H. Chang - Warren NJ
James J. Coleman - Plainfield NJ
Tan T. Sheng - Berkeley Heights NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

B01J 1700

29571

A method of fabricating gallium arsenide MOS devices with improved stoichiometric and electrical properties is disclosed. The device includes a gallium arsenide substrate overlaid with a native oxide and an aluminum oxide layer. The device is fabricated using a plasma oxidizing process.

43240380, Apr 13, 1982

Nov 24, 1980

6/209755

Chuan C. Chang - Berkeley Heights NJ
James A. Cooper - Warren NJ
Dawon Kahng - Bridgewater Township, Somerset County NJ
Shyam P. Murarka - New Providence NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

H01L 2128

29571

A method for making a MOSFET device (20) in a semiconductor body (10) includes the step of forming source and drain contact electrodes (12. 1, 12. 2) prior to growth of the gate oxide (10. 3) and after formation of a high conductivity surface region (10. 5). The exposed mutually opposing sidewall edges of each of the contact electrodes (12. 1, 12. 2) are coated with a sidewall silicon dioxide layer (15. 1, 15. 2), and the then exposed surface of the semiconductor body (10) between these sidewalls is etched to depth beneath the high conductivity surface region (10. 5) in order to separate it into the source and drain regions (10. 1, 10. 2). Formation of the high conductivity region may be omitted by using Schottky barrier or impurity doped material for the contact electrodes (12. 1, 12. 2).

40267415, May 31, 1977

Jun 16, 1976

5/696563

Chuan Chung Chang - Berkeley Heights NJ
Paul H. Citrin - Westfield NJ
Bertram Schwartz - Westfield NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

B29C 1708
C25D 1100

156628

A technique for preparing stoichiometric group III-V compound semiconductor surfaces involves a repetitive anodizing and etching sequence in an aqueous solution of appropriate pH and a basic solution, respectively. Surfaces treated in the described manner evidence a correct surface stoichiometry and minimum carbon contamination.

41795342, Dec 18, 1979

May 24, 1978

5/909024

Chuan C. Chang - Berkeley Heights NJ
Felix Ermanis - Summit NJ
Robert J. McCoy - Chatham NJ
Shohei Nakahara - North Plainfield NJ
Tan T. Sheng - Millington NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

H01L 2348

427 89

A semiconductor device with a low resistance ohmic contact, strongly adherent to the n-type surface of a body (11) of Group III-V compound semiconductor is obtained by a process including the sequential deposition of gold (13), tin (14) and gold (15) at a surface temperature of less than 200 degrees C followed by a heat treatment in a nonoxidizing atmosphere. This process has shown particular advantage when applied to aluminum containing compound semiconductors (e. g. , gallium aluminum arsenide). For such use an initial deposition of aluminum (16) has proven particularly successful in producing consistently low resistance ohmic contacts. The invention has been used in the production of light emitting diodes.