Inventors:
Antonio L. P. Rotondaro - Dallas TX
Reima Tapani Laaksonen - Dallas TX
Robert Kraft - Plano TX
Charlotte M. Appel - Dallas TX
Rebecca J. Gale - Allen TX
Katherine E. Violette - Dallas TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 2100
Abstract:
A plasma process is described which produces an undamaged and uncontaminated silicon surface by consuming silicon by continuous oxidation through a surface oxide layer and a simultaneous etch of the exposed silicon oxide surface. The surface silicon dioxide layer thickness is controlled as an equilibrium between oxide growth from oxygen atoms reaching the silicon surface and etching of the oxide surface. The silicon dioxide protects the silicon surface from plasma damage and from contamination.