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Cecily Elizabeth Andes

from Newton, MA
Age ~48
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Also known as:
Cecily E Andes, Cecily Elizabet Andes, Cecily Eliza Andes, Cealy Elizabeth Andes, Elizabeth Andes Cealy
Phone and address:
52 Washington Park, Newton, MA 02460
Related to:
Lindsay A Gilmore, 47
Connected to:
Alexander M Andes, 31Alexis Andes, 33Brenda G Andes, 83Brent L Andes, 56Chanda D Andes, 49Chelsea E Andes, 37Floyd A Andes, 78Fred D Andes, 88Grace M Andes, 84Jeffrey A Andes, 77

Cecily Andes Phones & Addresses

  • 52 Washington Park, Newtonville, MA 02460
  • Newton, MA
  • Watertown, MA
  • Framingham, MA
  • 1301 Applebriar Ln, Marlborough, MA 01752
  • Fairlawn, VA
  • Winston Salem, NC
  • Ithaca, NY
  • State College, PA

Work

Company: The dow chemical company Nov 2018 Position: Global account manager

Education

School / High School: University of Maryland 2005

Skills

Polymers • Chemistry • R&D • Materials Science • Polymer Science • Polymer Chemistry • Coatings • Nanotechnology • Characterization • Process Simulation • Process Engineering • Design of Experiments • Research and Development • Electrochemistry • Thin Films • Chemical Engineering • Organic Chemistry • Adhesives • Surface Chemistry • Semiconductors • Spc • Catalysis • High Performance Liquid Chromatography • Spectroscopy • Analytical Chemistry • Hplc • Materials • Polymer Characterization • Statistical Process Control

Industries

Nanotechnology

Resumes

Resumes

Cecily Andes Photo 1

Global Account Manager

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Location:
Newton, MA
Industry:
Nanotechnology
Work:
The Dow Chemical Company
Global Account Manager
The Dow Chemical Company 2011 - 2012
R and D Manager
The Dow Chemical Company 2011 - 2012
Global Marketing Manager- Advanced Patterning
The Dow Chemical Company 2009 - 2011
Research Scientist
Rohm and Haas Electronic Materials Jun 2004 - Apr 2009
Research Scientist
Education:
University of Maryland 2005
Pennsylvania State University 2003
Penn State University 1998 - 2003
Doctorates, Doctor of Philosophy, Chemistry Pennsylvania State University 2002
The Pennsylvania State University 2002
Ithaca College 1994 - 1998
Bachelors, Bachelor of Science, Chemistry Leiden University
Skills:
Polymers
Chemistry
R&D
Materials Science
Polymer Science
Polymer Chemistry
Coatings
Nanotechnology
Characterization
Process Simulation
Process Engineering
Design of Experiments
Research and Development
Electrochemistry
Thin Films
Chemical Engineering
Organic Chemistry
Adhesives
Surface Chemistry
Semiconductors
Spc
Catalysis
High Performance Liquid Chromatography
Spectroscopy
Analytical Chemistry
Hplc
Materials
Polymer Characterization
Statistical Process Control

Publications

Us Patents

Methods Of Forming Photolithographic Patterns By Negative Tone Development

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US Patent:
20130115559, May 9, 2013
Filed:
Nov 3, 2012
Appl. No.:
13/668218
Inventors:
Rohm and Haas Electronic Materials LLC - Marlborough MA, US
Jibin SUN - San Mateo CA, US
Seung-Hyun LEE - Marlborough MA, US
Jong Keun PARK - Hudson MA, US
Cecily ANDES - Watertown MA, US
Assignee:
ROHM AND HAAS ELECTRONIC MATERIALS LLC - Marlborough MA
International Classification:
G03F 7/20
US Classification:
430325
Abstract:
Provided are methods of forming photolithographic patterns by negative tone development. The methods employ a photoresist composition that includes a polymer having a unit of the following general formula (I):wherein: Rrepresents hydrogen or a Cto Calkyl group; a represents an integer from 1 to 3; and b represents 0 or 1. The methods find particular applicability in the manufacture of semiconductor devices.

Monomers, Polymers And Photoresist Compositions

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US Patent:
20130302735, Nov 14, 2013
Filed:
Nov 3, 2012
Appl. No.:
13/668217
Inventors:
Young Cheol BAE - Austin TX, US
Jong Keun PARK - Hudson MA, US
Seung-Hyun LEE - Marlborough MA, US
Cecily ANDES - Watertown MA, US
International Classification:
G03F 7/027
G03F 7/004
US Classification:
4302701, 560220, 526270
Abstract:
Provided are monomers, polymers, photoresist compositions and coated substrates which find use in the formation of photolithographic patterns by negative tone development. The monomers are of the following general formula (I):wherein: Rrepresents hydrogen or methyl. The methods find particular applicability in the manufacture of semiconductor devices.

Photoresist Compositions And Methods Of Forming Photolithographic Patterns

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US Patent:
20140038102, Feb 6, 2014
Filed:
Jul 31, 2013
Appl. No.:
13/956100
Inventors:
Christopher Nam LEE - Concord MA, US
Cecily ANDES - Watertown MA, US
Deyan WANG - Hudson MA, US
International Classification:
G03F 7/038
G03F 7/20
US Classification:
4302701, 430311
Abstract:
Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The photoresist compositions include one or more polymer additive that contains a basic moiety and which is substantially non-miscible with a resin component of the resist. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Pattern Formation Methods

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US Patent:
20190204742, Jul 4, 2019
Filed:
Dec 19, 2018
Appl. No.:
16/225551
Inventors:
- Marlborough MA, US
Stefan J. Caporale - Marlborough MA, US
Jason A. DeSISTO - Hopkinton MA, US
Jong Keun Park - Shrewsbury MA, US
Cong Liu - Shrewsbury MA, US
Cecily Andes - Newton MA, US
International Classification:
G03F 7/11
G03F 7/16
G03F 7/38
G03F 7/32
G03F 7/20
C09D 133/14
C08F 220/28
G03F 7/038
G03F 7/039
C09D 133/08
C08F 220/18
Abstract:
Methods of forming an electronic device, comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry.

Photoresist Overcoat Compositions

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US Patent:
20160122574, May 5, 2016
Filed:
Oct 29, 2015
Appl. No.:
14/927357
Inventors:
- Marlborough MA, US
Stefan J. CAPORALE - Marlborough MA, US
Jason A. DeSISTO - Bellingham MA, US
Jong Keun PARK - Shrewsbury MA, US
Cong LIU - Shrewsbury MA, US
Cecily ANDES - Newton MA, US
International Classification:
C09D 133/12
C09D 139/04
C09D 133/26
G03F 7/11
Abstract:
Photoresist overcoat compositions are provided. The compositions comprise: a matrix polymer, an additive polymer a basic quencher and an organic solvent. The additive polymer has a lower surface energy than a surface energy of the matrix polymer, and the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition. The compositions have particular applicability in the semiconductor manufacturing industry for use in negative tone development processes.

Pattern Formation Methods

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US Patent:
20160124309, May 5, 2016
Filed:
Oct 29, 2015
Appl. No.:
14/927354
Inventors:
- Marlborough MA, US
Stefan J. CAPORALE - Marlborough MA, US
Jason A. DeSISTO - Bellingham MA, US
Jong Keun PARK - Shrewsbury MA, US
Cong LIU - Shrewsbury MA, US
Cecily ANDES - Newton MA, US
International Classification:
G03F 7/20
G03F 7/38
G03F 7/32
G03F 7/16
Abstract:
Methods of forming an electronic device, comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry.

Photoresist Compositions And Methods Of Forming Photolithographic Patterns

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US Patent:
20160103393, Apr 14, 2016
Filed:
Oct 13, 2015
Appl. No.:
14/881760
Inventors:
- Marlborough MA, US
Christopher Nam LEE - Marlborough MA, US
Cecily ANDES - Marlborough MA, US
Deyan WANG - Marlborough MA, US
International Classification:
G03F 7/038
G03F 7/20
G03F 7/30
Abstract:
Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The photoresist compositions include one or more polymer additive that contains a basic moiety and which is substantially non-miscible with a resin component of the resist. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Photoresist Overcoat Compositions

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US Patent:
20150185607, Jul 2, 2015
Filed:
Dec 31, 2014
Appl. No.:
14/588404
Inventors:
- Marlborough MA, US
Christopher Nam LEE - Austin TX, US
Cecily ANDES - Newton MA, US
International Classification:
G03F 7/038
Abstract:
Photoresist overcoat compositions comprise: a quenching polymer wherein the quenching polymer comprises: a first unit having a basic moiety; and a second unit formed from a monomer of the following general formula (I):wherein: Ris chosen from hydrogen and substituted or unsubstituted C1 to C3 alkyl; Ris chosen from substituted and unsubstituted C1 to C15 alkyl; X is oxygen, sulfur or is represented by the formula NR, wherein Ris chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl; and Z is a single bond or a spacer unit chosen from optionally substituted aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —COO— and —CONR— wherein Ris chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl; and an organic solvent; wherein the quenching polymer is present in the composition in an amount of from 80 to 100 wt % based on total solids of the overcoat composition The compositions have particular applicability in the semiconductor manufacturing industry to negative tone development (NTD) lithographic processes.
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Cecily Elizabeth Andes from Newton, MA, age ~48 Get Report