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Bryan K Choo

from Milpitas, CA
Age ~54
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Related to:
June M Choo, 84Scott H Siemons, 59Chris L Siemons, 59
Connected to:
Audrey S Choo, 53Beverly A Choo, 46Billy Choo, 46Caroline M Choo, 96Chan Y Choo, 51Chunghi I Choo, 86Deborah A Choo, 65Donyne Y Choo, 49Huey Choo, 71Hyun J Choo, 56

Bryan Choo Phones & Addresses

  • 1220 Creekside Way, Milpitas, CA 95035
  • 1375 Montecito Ave, Mountain View, CA 94043 (650) 969-8891
  • 234 Escuela Ave, Mountain View, CA 94040 (650) 969-8891
  • Palo Alto, CA
  • 3491 Ala Akulikuli St, Honolulu, HI 96818

Work

Company: Western digital 2010 Position: Senior principal engineer - process development

Education

Degree: Master of Science, Masters School / High School: Stanford University 1993 to 1995 Specialities: Chemistry

Skills

Semiconductors

Industries

Semiconductors

Resumes

Resumes

Bryan Choo Photo 1

Senior Principal Engineer

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Location:
Berkeley, CA
Industry:
Semiconductors
Work:
Western Digital
Senior Principal Engineer - Process Development
Spansion 2003 - 2009
Member of Technical Staff
Amd 1996 - 2003
Member of Technical Staff
1996 - 2003
Senior Principal Engineer
Education:
Stanford University 1993 - 1995
Master of Science, Masters, Chemistry Stanford University 1989 - 1993
Bachelors, Bachelor of Science, Chemistry
Skills:
Semiconductors

Publications

Us Patents

Use Of Carbon Nanotubes To Calibrate Conventional Tips Used In Afm

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US Patent:
6354133, Mar 12, 2002
Filed:
Dec 4, 2000
Appl. No.:
09/729293
Inventors:
Sanjay K. Yedur - San Ramon CA
Bhanwar Singh - Morgan Hill CA
Bryan K. Choo - Mountain View CA
Michael K. Templeton - Atherton CA
Ramkumar Subramanian - Sunnyvale CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
G01B 528
US Classification:
73 189
Abstract:
The present invention provides systems, methods, and standards for calibrating nano-measuring devices. Calibration standards of the invention include carbon nanotubes and methods of the invention involve scanning carbon nanotubes using nano-scale measuring devices. The widths of the carbon nanotube calibration standards are known with a high degree of accuracy. The invention allows calibration of a wide variety of nano-scale measuring devices, taking into account many, and in some cases all, of the systematic errors that may affect a nano-scale measurement. The invention may be used to accurately calibrate line width, line height, and trench width measurements and may be used to precisely characterize both scanning probe microscope tips and electron microscope beams.

Ozone Cleaning Of Wafers

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US Patent:
6371134, Apr 16, 2002
Filed:
Jan 31, 2000
Appl. No.:
09/495014
Inventors:
Ramkumar Subramanian - San Jose CA
Khoi A. Phan - San Jose CA
Bharath Rangarajan - Santa Clara CA
Bhanwar Singh - Morgan Hill CA
Sanjay K. Yedur - Santa Clara CA
Bryan K. Choo - Mountain View CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
B08B 700
US Classification:
134 12, 134 11, 134 13, 134 26, 134 29
Abstract:
In one embodiment, the present invention relates to a method of processing a semiconductor structure, involving the steps of providing the semiconductor structure having a patterned resist thereon; stripping the patterned resist from the semiconductor structure, wherein an amount of carbon containing resist debris remain on the semiconductor structure; and contacting the semiconductor structure with ozone thereby reducing the amount of carbon containing resist debris thereon.

Analysis Of Cd-Sem Signal To Detect Scummed/Closed Contact Holes And Lines

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US Patent:
6373053, Apr 16, 2002
Filed:
Jan 31, 2000
Appl. No.:
09/495281
Inventors:
Bryan K. Choo - Mountain View CA
Bhanwar Singh - Morgan Hill CA
Sanjay K. Yedur - Santa Clara CA
Khoi A. Phan - San Jose CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
G01N 2300
US Classification:
250310
Abstract:
A system is provided for detecting scumming in a wafer. The system includes an analysis system for providing a signal corresponding to a surface portion of the wafer and a processing system operatively coupled to the analysis system. The processing system is configured to determine a shape of at least a portion of the signal and, the processing system detects scumming in the wafer based upon the shape of at least a portion of the signal.

Using A Crystallographic Etched Silicon Sample To Measure And Control The Electron Beam Width Of A Sem

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US Patent:
6396059, May 28, 2002
Filed:
Jul 10, 2000
Appl. No.:
09/612807
Inventors:
Bhanwar Singh - Morgan Hill CA
Bryan K. Choo - Mountain View CA
Sanjay K. Yedur - Santa Clara CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H01J 3726
US Classification:
250310
Abstract:
A system and method is provided for measuring and determining the resolution of a SEM imaging system employing a crystallographic etched sample with a re-entrant cross-sectional profile. A re-entrant or negative profile is employed because the top-down view seen by the SEM is very sharp due to the fact the edge of the profile has zero width. Therefore, any apparent width seen in the signal is a function of the electron beam width alone. Scanning the beam across the profile provides a signal that moves from a first state to a second state. The time period or sloping portion of the signal from the first state to the second state provides a direct correlation to the electron beam width. Thus, scanning across the sample allows for a calculation of the electron beam width. By scanning across features of different orientations, the shape of the electron beam can be determined. Alternatively, by rotating the electron beam and scanning across the same feature, the shape of the electron beam can be determined.

Cleaning Carbon Contamination On Mask Using Gaseous Phase

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US Patent:
6423479, Jul 23, 2002
Filed:
Jan 31, 2000
Appl. No.:
09/495165
Inventors:
Ramkumar Subramanian - San Jose CA
Khoi A. Phan - San Jose CA
Bharath Rangarajan - Santa Clara CA
Bhanwar Singh - Morgan Hill CA
Sanjay K. Yedur - Santa Clara CA
Bryan K. Choo - Mountain View CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
G03F 726
US Classification:
430329, 430322, 134 1
Abstract:
In one embodiment, the present invention relates to a method of processing a lithography mask, involving the steps of exposing a lithography substrate with actinic radiation through the lithography mask in a chamber; removing the lithography mask from the chamber, wherein the lithography mask contains carbon contaminants; and contacting the lithography mask with sulfur trioxide thereby reducing the carbon contaminants thereon.

Use Of Carbon Nanotubes As Chemical Sensors By Incorporation Of Fluorescent Molecules Within The Tube

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US Patent:
6437329, Aug 20, 2002
Filed:
Oct 27, 1999
Appl. No.:
09/428098
Inventors:
Sanjay K. Yedur - Santa Clara CA
Bhanwar Singh - Morgan Hill CA
Bryan K. Choo - Mountain View CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
G21K 700
US Classification:
250306, 356 73, 356301, 250234, 250252
Abstract:
A system for analyzing a film and detecting a defect associated therewith includes a scanning probe microscope having a nanotube tip with a material associated therewith which exhibits a characteristic that varies with respect to a film composition at a location corresponding to the nanotube tip. The system also includes a detection system for detecting the material characteristic and a controller operatively coupled to the detection system and the scanning probe microscope. The controller configured to receive information associated with the detected characteristic and use the information to determine whether the film contains a defect at the location corresponding to the nanotube tip. The invention also includes a method of detecting a film composition at a particular location of a film or substrate. The method includes associating a material exhibiting a characteristic which varies with respect to a film composition with a nanotube tip of a scanning probe microscope and detecting the characteristic. The method then includes the step of determining a composition of a portion of the film using the detected characteristic.

Uv-Enhanced Silylation Process To Increase Etch Resistance Of Ultra Thin Resists

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US Patent:
6451512, Sep 17, 2002
Filed:
May 1, 2000
Appl. No.:
09/565691
Inventors:
Bharath Rangarajan - Santa Clara CA
Ramkumar Subramanian - San Jose CA
Khoi A. Phan - San Jose CA
Bhanwar Singh - Morgan Hill CA
Michael K. Templeton - Atherton CA
Sanjay K. Yedur - Santa Clara CA
Bryan K. Choo - Mountain View CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
G03F 700
US Classification:
430313, 430296, 430328
Abstract:
In one embodiment, the present invention relates to a method of processing an ultrathin resist, involving the steps of depositing the ultra-thin photoresist over a semiconductor substrate, the ultra-thin resist having a thickness less than about 3,000 ; irradiating the ultra-thin resist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin resist; and contacting the ultra-thin resist with a silicon containing compound in an environment of at least one of ultraviolet light and ozone, wherein contact of the ultra-thin resist with the silicon containing compound is conducted between irradiating and developing the ultra-thin resist or after developing the ultra-thin resist.

Scanning Probe Microscope Having Optical Fiber Spaced From Point Of Hp

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US Patent:
6452161, Sep 17, 2002
Filed:
Mar 28, 2000
Appl. No.:
09/536529
Inventors:
Sanjay K. Yedur - Santa Clara CA
Bhanwar Singh - Morgan Hill CA
Bryan K. Choo - Mountain View CA
Carmen L. Morales - San Jose CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H01J 314
US Classification:
250234, 250311, 25022711, 250309, 73618
Abstract:
A measuring system and apparatus is provided in which a scanning probe microscope includes a high resolution optical sensor adapted to view a portion of a workpiece beneath the scanning probe tip. Also provided is a scanning tip assembly with a cantilever/tip assembly and an optical sensor associated with a cantilever assembly. The optical sensor may comprise a charge coupled device or other solid state camera and may be fabricated on the cantilever and/or the tip. In addition, a scanning tip assembly is provided for a scanning probe microscope having an optical fiber adapted to receive reflected light from the at least a portion of the workpiece. The scanning tip may be employed in an AFM or other scanning probe microscope, thereby providing simultaneous viewing and scanning of a workpiece surface. Also provided is a measuring apparatus comprising a scanning probe microscope having an optical fiber adapted to receive reflected light from a feature of a workpiece, and a camera connected to the optical fiber to provide a visual image based on the reflected light from the feature of the workpiece.
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Bryan K Choo from Milpitas, CA, age ~54 Get Report