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Bruno W Schueler

from San Jose, CA
Age ~68
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Also known as:
Bruno Te Schueler, Bruno Patricia Schueler, Bruno Klassen Schueler, Bruno Schuler, Bruno Lindley, Walter Schueler Bruno
Phone and address:
1067 Merle Ave, San Jose, CA 95125
(408) 832-0046
Related to:
Sydney L Rayner, 34Jessica SchuelerJeffrey A Lindley, 65Patricia M Lindley, 65
Connected to:
Alexandra L Schueler, 37Arthur D Schueler, 43Beverly J Schuele, 90Christian J Schueler, 65Coady A Schueler, 63Dennis M Schueler, 74Derek M Schueler, 35Don O Schueler, 102Emily M Schuelein, 36Jeff F Schuelein, 55

Bruno Schueler Phones & Addresses

  • 1067 Merle Ave, San Jose, CA 95125 (408) 832-0046
  • Sunnyvale, CA
  • 1067 Merle Ave, San Jose, CA 95125

Work

Position: Food Preparation and Serving Related Occupations

Education

Degree: Graduate or professional degree

Emails

p***[email protected]

Resumes

Resumes

Bruno Schueler Photo 1

Principal Scientist

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Location:
3090 Oakmead Village Dr, Santa Clara, CA 95051
Industry:
Semiconductors
Work:
Revera Inc.
Principal Scientist
Languages:
English
German
Bruno Schueler Photo 2

Bruno Schueler

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Publications

Us Patents

Techniques For Analyzing Data Generated By Instruments

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US Patent:
7231324, Jun 12, 2007
Filed:
Apr 29, 2005
Appl. No.:
11/118683
Inventors:
James Orrock - Eden Prairie MN, US
Thomas Larson - San Mateo CA, US
Bruno Schueler - San Jose CA, US
Lawrence Bot - Maple Grove MN, US
James Quigley - Mountain View CA, US
Emir Gurer - Scotts Valley CA, US
Assignee:
ReVera Incorporated - Sunnyvale CA
International Classification:
G06F 15/00
US Classification:
702189, 702182
Abstract:
According to one embodiment of the invention, a method for analyzing data from an instrument is disclosed. The raw data generated by the instrument, along with configuration data generated by a user, is packaged into a calling model. The raw data may include, for example, counts having a certain kinetic energy when analyzing photoelectron spectroscopy data. The configuration data may include several parameters selected by the user based on the composition and configuration of the structure being measured. The calling model may serve as an interface between the instrument and an engine for generating an algorithm for returning desired results to the user. The engine then generates the algorithm as well as the results specified by the user, and the calling model returns the results to the user. This allows a specific algorithm and results for a specific measured sample or structure to be generated using known algorithms and functions.

Photoelectron Spectroscopy Apparatus And Method Of Use

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US Patent:
7399963, Jul 15, 2008
Filed:
Sep 27, 2005
Appl. No.:
11/237041
Inventors:
Bruno W. Schueler - San Jose CA, US
David A. Reed - Belmont CA, US
Assignee:
ReVera Incorporated - Sunnyvale CA
International Classification:
H01J 40/00
US Classification:
250305, 250526
Abstract:
According to one aspect of the present invention, a substrate processing system is provided. The system may include a chamber wall enclosing a chamber, a substrate support positioned within the chamber to support a substrate, an electromagnetic radiation source to emit electromagnetic radiation onto the substrate on the substrate support, the electromagnetic radiation causing photoelectrons to be emitted from a material on the substrate, an analyzer to capture the photoelectrons emitted from the substrate, and a magnetic field generator to generate a magnetic field within the chamber and guide the photoelectrons from the substrate to the analyzer.

Method And System For Non-Destructive Distribution Profiling Of An Element In A Film

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US Patent:
7411188, Aug 12, 2008
Filed:
Aug 31, 2005
Appl. No.:
11/218114
Inventors:
Paola deCecco - Foster City CA, US
Bruno Schueler - San Jose CA, US
David Reed - Belmont CA, US
Michael Kwan - Sunnyvale CA, US
Dave Ballance - Cupertino CA, US
Assignee:
ReVera Incorporated - Sunnyvale CA
International Classification:
H01J 49/44
H01J 37/26
US Classification:
250305, 250306, 250307
Abstract:
A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

Determining Layer Thickness Using Photoelectron Spectroscopy

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US Patent:
7420163, Sep 2, 2008
Filed:
Apr 29, 2005
Appl. No.:
11/118035
Inventors:
Bruno Schueler - San Jose CA, US
Assignee:
ReVera Incorporated - Sunnyvale CA
International Classification:
G01N 23/227
US Classification:
250305, 250306, 250307, 250310, 324702, 324716, 324751, 378 45, 378 50
Abstract:
According to one embodiment of the invention, photoelectron spectroscopy is used to determine the thickness of one or more layers in a single or multi-layer structure on a substrate. The thickness may be determined by measuring the intensities of two photoelectron species or other atom-specific characteristic electron species emitted by the structure when bombarded with photons. A predictive intensity function that is dependent on the thickness of a layer is determined for each photoelectron species. A ratio of two predictive intensity functions is formulated, and the ratio is iterated to determine the thickness of a layer of the structure. According to one embodiment, two photoelectron species may be measured from a single layer to determine a thickness of that layer. According to another embodiment, two photoelectron species from different layers or from a substrate may be measured to determine a thickness of a layer.

Method And System For Non-Destructive Distribution Profiling Of An Element In A Film

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US Patent:
7884321, Feb 8, 2011
Filed:
Jul 25, 2008
Appl. No.:
12/220645
Inventors:
Paola deCecco - Foster City CA, US
Bruno Schueler - San Jose CA, US
David Reed - Belmont CA, US
Michael Kwan - Sunnyvale CA, US
David Stephen Ballance - Cupertino CA, US
Assignee:
Revera, Incorporated - Sunnyvale CA
International Classification:
H01J 37/26
US Classification:
250305
Abstract:
A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

Method And System For Calibrating An X-Ray Photoelectron Spectroscopy Measurement

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US Patent:
8011830, Sep 6, 2011
Filed:
Apr 27, 2009
Appl. No.:
12/430687
Inventors:
Bruno W. Schueler - San Jose CA, US
David A. Reed - Belmont CA, US
Bruce H. Newcome - Sunnyvale CA, US
Jeffrey A. Moore - San Jose CA, US
Assignee:
Revera Incorporated - Santa Clara CA
International Classification:
G01D 18/00
US Classification:
378207, 378 84
Abstract:
A method and a system for calibrating an X-ray photoelectron spectroscopy (XPS) measurement are described. The method includes using an X-ray beam to generate an XPS signal from a sample and normalizing the XPS signal with a measured or estimated flux of the X-ray beam. The system includes an X-ray source for generating an X-ray beam and a sample holder for positioning a sample in a pathway of the X-ray beam. A detector is included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. Also included are a flux detector for determining a measured or estimated flux of the X-ray beam and a computing system for normalizing the XPS signal with the measured or estimated flux of the X-ray beam.

Method And System For Non-Destructive Distribution Profiling Of An Element In A Film

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US Patent:
8269167, Sep 18, 2012
Filed:
Feb 4, 2011
Appl. No.:
13/021435
Inventors:
Paola deCecco - Foster City CA, US
Bruno Schueler - San Jose CA, US
David Reed - Belmont CA, US
Michael Kwan - Sunnyvale CA, US
David Stephen Ballance - Cupertino CA, US
Assignee:
Revera, Incorporated - Sunnyvale CA
International Classification:
H01J 37/26
US Classification:
250305
Abstract:
A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

Method And System For Non-Destructive Distribution Profiling Of An Element In A Film

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US Patent:
8610059, Dec 17, 2013
Filed:
Aug 23, 2012
Appl. No.:
13/593289
Inventors:
Paola deCecco - Foster City CA, US
Bruno Schueler - San Jose CA, US
David Reed - Belmont CA, US
Michael Kwan - Sunnyvale CA, US
David Stephen Ballance - Cupertino CA, US
Assignee:
ReVera, Incorporated - Sunnyvale CA
International Classification:
H01J 37/26
US Classification:
250305
Abstract:
A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.
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Bruno W Schueler from San Jose, CA, age ~68 Get Report