Brian T Watson from Caldwell, ID, age 40

Professional Records

Lawyers & Attorneys

Brian Watson - Lawyer

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Office:

Riley Safer Holmes & Cancila LLP

Specialties:

Civil Rights
Intellectual Property
Family

ISLN:

921645052

Admitted:

2010

University:

DePaul University Kellstadt Graduate School of Business, M.B.A., 2004; DePaul University Kellstadt Graduate School of Business, M.B.A., 2004; Michigan Technological University, B.S., 2002; Michigan Technological University, B.S., 2002; Purdue University, M.S., 2005

Law School:

Chicago-Kent College of Law, J.D., 2010

Brian Watson - Lawyer

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ISLN:

902930481

Admitted:

1973

Brian Watson - Lawyer

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Office:

Watson Sloane PLLC

Specialties:

County & Local Govt Law
Probate & Trust
Banking & Lending
Business Law
City
Commercial & Corporate Finance
Economic Development
International Law & Tax
Public Finance
Real Property
Securities / Investment Fraud

ISLN:

920062751

Admitted:

2008

University:

University of Central Florida, B.S., 2003

Law School:

Stetson University College of Law, J.D., 2007

Medicine Doctors

Brian W. Watson

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Specialties:

Anatomic Pathology & Clinical Pathology

Work:

Dominion Pathology Associates
1906 Belleview Ave SE FL 3, Roanoke, VA 24014
(540) 581-0150 (phone), (540) 985-4537 (fax)

Dominion Pathology Associates
1 Riverside Cir STE 105, Roanoke, VA 24016
(540) 581-0150 (phone), (540) 985-4537 (fax)

Education:

Medical School
Virginia Commonwealth University SOM
Graduated: 2001

Languages:

English

Description:

Dr. Watson graduated from the Virginia Commonwealth University SOM in 2001. He works in Roanoke, VA and 1 other location and specializes in Anatomic Pathology & Clinical Pathology. Dr. Watson is affiliated with Carilion Franklin Memorial Hospital, Carilion New River Valley Medical Center and Carilion Roanoke Memorial Hospital.

License Records

Brian Watson

License #:

003885 - Expired

Category:

WELDER

Issued Date:

Mar 11, 1994

Expiration Date:

Sep 30, 1994

Business Records

Name / Title

Company / Classification

Phones & Addresses

Brian Watson
Director

NORTH PARK MEADOWS OWNERS ASSOCIATION
Civic/Social Association

300 E Sonterra Blvd STE 250, San Antonio, TX 78258
421 S Seguin Ave, New Braunfels, TX 78130

Brian J. Watson
Manager

BLANCO FAMILY DENTISTRY MANAGEMENT, LLC

11206 Brunt Dr, Austin, TX 78758
11101 Bending Bough Trl, Austin, TX 78758
4203 Gardendale St, San Antonio, TX 78229

Brian Watson
M Partner

Alaska Water Technologies LLC
Water Filtration and Purification

360 E Intl Airport Rd, Anchorage, AK 99518
(907) 563-2207

Brian Justin Watson

Brian Watson DDS
Dentists · Oral Surgeons

12042 Blanco Rd, San Antonio, TX 78216
(210) 349-9800

Brian Watson
Treasurer

TICKLE BLAGG ANIMAL HOSPITAL PLLC
Veterinary Services

1100 Hwy 80, San Marcos, TX 78666
(512) 353-1871

Brian J. Watson
Manager

BASTROP FAMILY DENTISTRY MANAGEMENT, LLC

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US Patent:

20190103350, Apr 4, 2019

Filed:

Nov 27, 2018

Appl. No.:

16/200902

Inventors:

- Boise ID, US
Jenna L. Russon - Meridian ID, US
Tim H. Bossart - Boise ID, US
Brian R. Watson - Boise ID, US
Nikolay A. Mirin - Boise ID, US
David A. Kewley - Boise ID, US

International Classification:

H01L 23/528
H01L 21/768
H01L 21/3213
H01L 21/033
H01L 49/02
H01L 27/11582
H01L 27/108

Abstract:

A semiconductor device including conductive lines is disclosed. First conductive lines each comprise a first portion, a second portion, and an enlarged portion, the enlarged portion connecting the first portion and the second portion of the first conductive line. The semiconductor device includes second conductive lines, at least some of the second conductive lines disposed between a pair of the first conductive lines, each second conductive line including a larger cross-sectional area at an end portion of the second conductive line than at other portions thereof. The semiconductor device includes a pad on each of the first conductive lines and the second conductive lines, wherein the pad on each of the second conductive lines is on the end portion thereof and the pad on each of the first conductive lines is on the enlarged portion thereof.

Semiconductor Devices Including Conductive Lines And Methods Of Forming The Semiconductor Devices

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US Patent:

20180114751, Apr 26, 2018

Filed:

Dec 14, 2017

Appl. No.:

15/842432

Inventors:

- Boise ID, US
Jenna L. Russon - Boise ID, US
Tim H. Bossart - Boise ID, US
Brian R. Watson - Boise ID, US
Nikolay A. Mirin - Boise ID, US
David A. Kewley - Boise ID, US

International Classification:

H01L 23/528
H01L 21/3213
H01L 21/768
H01L 21/033
H01L 27/108

Abstract:

A semiconductor device including conductive lines is disclosed. First conductive lines each comprise a first portion, a second portion, and an enlarged portion, the enlarged portion connecting the first portion and the second portion of the first conductive line. The semiconductor device includes second conductive lines, at least some of the second conductive lines disposed between a pair of the first conductive lines, each second conductive line including a larger cross-sectional area at an end portion of the second conductive line than at other portions thereof. The semiconductor device includes a pad on each of the first conductive lines and the second conductive lines, wherein the pad on each of the second conductive lines is on the end portion thereof and the pad on the each of the first conductive lines is on the enlarged portion thereof.

Semiconductor Devices Including Conductive Lines And Methods Of Forming The Semiconductor Devices

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US Patent:

20170062324, Mar 2, 2017

Filed:

Aug 28, 2015

Appl. No.:

14/838768

Inventors:

- Boise ID, US
Jenna L. Russon - Boise ID, US
Tim H. Bossart - Boise ID, US
Brian R. Watson - Boise ID, US
Nikolay A. Mirin - Boise ID, US
David A. Kewley - Boise ID, US

International Classification:

H01L 23/528
H01L 21/768

Abstract:

A semiconductor device including conductive lines is disclosed. First conductive lines each comprise a first portion, a second portion, and an enlarged portion, the enlarged portion connecting the first portion and the second portion of the first conductive line. The semiconductor device includes second conductive lines, at least some of the second conductive lines disposed between a pair of the first conductive lines, each second conductive line including a larger cross-sectional area at an end portion of the second conductive line than at other portions thereof. The semiconductor device includes a pad on each of the first conductive lines and the second conductive lines, wherein the pad on each of the second conductive lines is on the end portion thereof and the pad on the each of the first conductive lines is on the enlarged portion thereof.