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Brian Santora Phones & Addresses

  • Beaver Dams, NY
  • 3348 Skyline Dr, Penn Yan, NY 14527 (315) 536-8114 (315) 536-1981
  • Easton, PA
  • Carrboro, NC
  • River Falls, WI
  • Monrovia, CA
  • Middle Village, NY
  • Perry, NY
  • 1112 Pre Emption Rd, Penn Yan, NY 14527

Work

Company: Shore liquidators 2012 to 2012 Position: Owner

Education

Degree: Graduate or professional degree

Skills

Neuroscience

Resumes

Resumes

Brian Santora Photo 1

Brian Santora

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Work:
Shore Liquidators 2012 - 2012
Owner
Skills:
Neuroscience

Publications

Us Patents

Phosphorus-Containing Compositions And Their Use In Hydrocyanation, Isomerization And Hydroformylation Reactions

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US Patent:
6924345, Aug 2, 2005
Filed:
Sep 10, 2003
Appl. No.:
10/659205
Inventors:
Michel R. Gagne - Carrboro NC, US
Kenneth G. Moloy - Hockessin DE, US
Nora S. Radu - Landenberg PA, US
Brian P. Santora - River Falls WI, US
Wilson Tam - Boothwyn PA, US
Assignee:
Invista North America S.A R.L. - Wilmington DE
International Classification:
C08F130/02
US Classification:
526274
Abstract:
A polymeric, phosphorus-containing composition made by heating, in the presence of an initiator, preferably a free radical initiator, and optionally in the presence of one or more comonomers, at least one substituted phosphonylated 2,2′-dihydroxyl-1,1′-binaphthalene or at least one substituted 2,2′-dihydroxyl-1,1′-biphenylene.

Auto-Stopping Slurries For Chemical-Mechanical Polishing Of Topographic Dielectric Silicon Dioxide

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US Patent:
7696095, Apr 13, 2010
Filed:
Feb 23, 2007
Appl. No.:
11/678248
Inventors:
Eric Oswald - Rochester NY, US
Sean Frink - Penn Yan NY, US
Bradley Kraft - Fairport NY, US
Brian Santora - Penn Yan NY, US
Assignee:
Ferro Corporation - Cleveland OH
International Classification:
H01L 21/302
US Classification:
438693, 438691, 438692
Abstract:
The present invention provides auto-stopping CMP slurry compositions that minimize post-CMP non-uniformity and also extend the time that polishing can be continued beyond the end point without the risk of over-polishing the dielectric silicon dioxide film. Auto-stopping CMP slurry compositions according to the invention include ceria abrasive particles and an effective amount of a polyalkylamine such as polyethyleneimine dispersed in water. The methods of the invention include polishing a topographic dielectric silicon dioxide film layer using the auto-stopping CMP slurry compositions to obtain a dielectric silicon dioxide surface having a desired predetermined minimum step height.

Phosphorus-Containing Compositions And Their Use In Hydrocyanation, Isomerization And Hydroformylation Reactions

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US Patent:
20030144440, Jul 31, 2003
Filed:
Nov 26, 2001
Appl. No.:
09/994135
Inventors:
Michel Gagne - Carrboro NC, US
Kenneth Moloy - Hockessin DE, US
Nora Radu - Landenberg PA, US
Brian Santora - River Falls WI, US
Wilson Tam - Boothwyn PA, US
International Classification:
C08F134/02
C08F234/02
C08F120/62
C08F220/62
US Classification:
526/274000, 526/266000, 526/275000, 558/083000, 558/153000
Abstract:
A polymeric, phosphorus-containing composition made by heating, in the presence of an initiator, preferably a free radical initiator, and optionally in the presence of one or more comonomers, at least one substituted phosphonylated 2,2′-dihydroxyl-1,1′-binaphthalene or at least one substituted 2,2′-dihydroxyl-1,1′-biphenylene.

Chemical-Mechanical Polishing Compositions Containing Aspartame And Methods Of Making And Using The Same

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US Patent:
20080314872, Dec 25, 2008
Filed:
Apr 17, 2008
Appl. No.:
12/104798
Inventors:
Yue Liu - Pittsford NY, US
Brian Santora - Penn Yan NY, US
Assignee:
FERRO CORPORATION - Cleveland OH
International Classification:
C09K 13/06
B44C 1/22
US Classification:
216 53, 252 791
Abstract:
The present invention provides an aqueous CMP slurry composition that comprises abrasive particles and Aspartame. The CMP slurry composition according to the invention is selective for polishing silicon dioxide in preference to silicon nitride from a surface of an article by chemical mechanical planarization. Furthermore, as more Aspartame is added to the slurry, the silicon dioxide rate is either not greatly affected or increases and the silicon nitride rate stays extremely low. In addition to offering selectivity of silicon dioxide to silicon nitride polishing, the present invention provides a method of using Aspartame as a polish accelerant in silicon dioxide polishing.
Brian Paul Santora from Beaver Dams, NY, age ~52 Get Report