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Brady L Keays

from Kuna, ID
Age ~60

Brady Keays Phones & Addresses

  • 48 S Black Cat Rd, Kuna, ID 83634 (650) 759-3392
  • Thousand Oaks, CA
  • 688 Silver Ave, Half Moon Bay, CA 94019 (650) 726-1481
  • Sunnyvale, CA
  • Oceanside, CA
  • South Berwick, ME

Publications

Us Patents

Non-Volatile Memory With Block Erase

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US Patent:
6603682, Aug 5, 2003
Filed:
Nov 18, 2002
Appl. No.:
10/298743
Inventors:
Brady L. Keays - Half Moon Bay CA
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
G11C 1604
US Classification:
36518533, 36518529, 36523003, 36518905, 36523006, 36523008, 36518511
Abstract:
A method and apparatus for erase operations of a flash memory block. In one embodiment, a method comprises erasing a predetermined percent of rows in a memory block, analyzing a number of erase pulses used to erase the predetermined percent and calculating an acceptable number of additional erase pulses which could be applied to the memory block to erase the remaining rows. In another embodiment, a flash memory device comprises a memory array, a controller and a register. The memory array has a plurality of blocks of flash memory cells. The memory cells in each block are arranged in rows. The controller is used to control memory operations to the memory array and the register is coupled to the controller to track the erase status of each row of memory cells.

Non-Volatile Memory With Block Erase

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US Patent:
6614695, Sep 2, 2003
Filed:
Aug 24, 2001
Appl. No.:
09/939394
Inventors:
Brady L. Keays - Half Moon Bay CA
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
G11C 1604
US Classification:
36518533, 36518529, 365218, 36518905, 36523003, 36523008, 365236
Abstract:
A method and apparatus for erase operations of a flash memory block. In one embodiment, a method comprises erasing a predetermined percent of rows in a memory block, analyzing a number of erase pulses used to erase the predetermined percent and calculating an acceptable number of additional erase pulses which could be applied to the memory block to erase the remaining rows. In another embodiment, a flash memory device comprises a memory array, a controller and a register. The memory array has a plurality of blocks of flash memory cells. The memory cells in each block are arranged in rows. The controller is used to control memory operations to the memory array and the register is coupled to the controller to track the erase status of each row of memory cells.

Non-Volatile Memory With Block Erase

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US Patent:
6618293, Sep 9, 2003
Filed:
Nov 18, 2002
Appl. No.:
10/298745
Inventors:
Brady L. Keays - Half Moon Bay CA
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
G11C 1604
US Classification:
36518529, 36518533, 36518523, 36523006, 36523008, 365236
Abstract:
A method and apparatus for erase operations of a flash memory block. In one embodiment, a method comprises erasing a predetermined percent of rows in a memory block, analyzing a number of erase pulses used to erase the predetermined percent and calculating an acceptable number of additional erase pulses which could be applied to the memory block to erase the remaining rows. In another embodiment, a flash memory device comprises a memory array, a controller and a register. The memory array has a plurality of blocks of flash memory cells. The memory cells in each block are arranged in rows. The controller is used to control memory operations to the memory array and the register is coupled to the controller to track the erase status of each row of memory cells.

Non-Volatile Memory With Block Erase

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US Patent:
6618294, Sep 9, 2003
Filed:
Nov 18, 2002
Appl. No.:
10/298748
Inventors:
Brady L. Keays - Half Moon Bay CA
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
G11C 1604
US Classification:
36518533, 36518529, 36518511, 36518519, 36518523, 36518525
Abstract:
A method and apparatus for erase operations of a flash memory block. In one embodiment, a method comprises erasing a predetermined percent of rows in a memory block, analyzing a number of erase pulses used to erase the predetermined percent and calculating an acceptable number of additional erase pulses which could be applied to the memory block to erase the remaining rows. In another embodiment, a flash memory device comprises a memory array, a controller and a register. The memory array has a plurality of blocks of flash memory cells. The memory cells in each block are arranged in rows. The controller is used to control memory operations to the memory array and the register is coupled to the controller to track the erase status of each row of memory cells.

Non-Volatile Memory With Block Erase

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US Patent:
6646926, Nov 11, 2003
Filed:
Nov 18, 2002
Appl. No.:
10/298763
Inventors:
Brady L. Keays - Half Moon Bay CA
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
G11C 1604
US Classification:
36518529, 36518533, 36518519, 36518523, 36518524, 36518525, 36518905, 365218, 36523006, 36523008, 365236
Abstract:
A method and apparatus for erase operations of a flash memory block. In one embodiment, a method comprises erasing a predetermined percent of rows in a memory block, analyzing a number of erase pulses used to erase the predetermined percent and calculating an acceptable number of additional erase pulses which could be applied to the memory block to erase the remaining rows. In another embodiment, a flash memory device comprises a memory array, a controller and a register. The memory array has a plurality of blocks of flash memory cells. The memory cells in each block are arranged in rows. The controller is used to control memory operations to the memory array and the register is coupled to the controller to track the erase status of each row of memory cells.

Non-Volatile Memory With Block Erase

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US Patent:
6646927, Nov 11, 2003
Filed:
Nov 18, 2002
Appl. No.:
10/298839
Inventors:
Brady L. Keays - Half Moon Bay CA
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
G11C 1604
US Classification:
36518533, 36518529, 36518519, 36518521, 36518523, 36518518, 36518511, 36518508, 36518505, 36518525, 36523003, 36523006, 36523008, 365236
Abstract:
A method and apparatus for erase operations of a flash memory block. In one embodiment, a method comprises erasing a predetermined percent of rows in a memory block, analyzing a number of erase pulses used to erase the predetermined percent and calculating an acceptable number of additional erase pulses which could be applied to the memory block to erase the remaining rows. In another embodiment, a flash memory device comprises a memory array, a controller and a register. The memory array has a plurality of blocks of flash memory cells. The memory cells in each block are arranged in rows. The controller is used to control memory operations to the memory array and the register is coupled to the controller to track the erase status of each row of memory cells.

Non-Volatile Memory With Block Erase

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US Patent:
6650571, Nov 18, 2003
Filed:
Nov 18, 2002
Appl. No.:
10/298777
Inventors:
Brady L. Keays - Half Moon Bay CA
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
G11C 1604
US Classification:
36518533, 36518511, 36518519, 36518523, 36518524, 36518525, 36518529, 3651853, 365236, 36523008
Abstract:
A method and apparatus for erase operations of a flash memory block. In one embodiment, a method comprises erasing a predetermined percent of rows in a memory block, analyzing a number of erase pulses used to erase the predetermined percent and calculating an acceptable number of additional erase pulses which could be applied to the memory block to erase the remaining rows. In another embodiment, a flash memory device comprises a memory array, a controller and a register. The memory array has a plurality of blocks of flash memory cells. The memory cells in each block are arranged in rows. The controller is used to control memory operations to the memory array and the register is coupled to the controller to track the erase status of each row of memory cells.

Non-Volatile Memory With Block Erase

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US Patent:
6654292, Nov 25, 2003
Filed:
Nov 18, 2002
Appl. No.:
10/298737
Inventors:
Brady L. Keays - Half Moon Bay CA
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
G11C 1604
US Classification:
36518533, 36518529, 3651853, 36518525, 36518523, 36518519, 36518511, 36518508, 36518904, 365218, 36523003, 36523008, 365236, 3652385
Abstract:
A method and apparatus for erase operations of a flash memory block. In one embodiment, a method comprises erasing a predetermined percent of rows in a memory block, analyzing a number of erase pulses used to erase the predetermined percent and calculating an acceptable number of additional erase pulses which could be applied to the memory block to erase the remaining rows. In another embodiment, a flash memory device comprises a memory array, a controller and a register. The memory array has a plurality of blocks of flash memory cells. The memory cells in each block are arranged in rows. The controller is used to control memory operations to the memory array and the register is coupled to the controller to track the erase status of each row of memory cells.
Brady L Keays from Kuna, ID, age ~60 Get Report