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Boris N Feygelson

from Springfield, VA
Age ~67
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Also known as:
Bonis Feygelson, Boriss Feygelson
Phone and address:
6616 Red Jacket Rd, Springfield, VA 22152
(703) 569-3298
Related to:
Tanya N Feygelson, 53Mariya B Feygelson, 32Tatyana Feygelson, 62
Connected to:
Miriam L Feygenson, 37Anna Feygin, 66Eugene Feygin, 51Yana Feygin, 41Austin D Feyh, 35Jerry G Feyh, 62Michael Feyh, 57Elmo Feyisa, 55Jill Feyka, 59Theodore H Feyler, 61

Boris Feygelson Phones & Addresses

  • 6616 Red Jacket Rd, Springfield, VA 22152 (703) 569-3298
  • 2826 Hunter Mill Rd, Oakton, VA 22124 (703) 242-6027
  • 800 Piccadilly Loop, Yorktown, VA 23692 (757) 874-6356
  • 300 Hidenwood Dr, Newport News, VA 23606
  • Syosset, NY
  • Jackson Heights, NY

Publications

Us Patents

Formation Of Graphene On A Surface

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US Patent:
8647918, Feb 11, 2014
Filed:
Mar 5, 2013
Appl. No.:
13/785118
Inventors:
Francis J. Kub - Arnold MD, US
Travis Anderson - Alexandria VA, US
Boris N. Feygelson - Springfield VA, US
Assignee:
The United States of America, as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 51/40
US Classification:
438 99, 438660, 257E21295
Abstract:
Methods of forming a graphene material on a surface are presented. A metal material is disposed on a material substrate or material layer and is infused with carbon, for example, by exposing the metal to a carbon-containing vapor. The carbon-containing metal material is annealed to cause graphene to precipitate onto the bottom of the metal material to form a graphene layer between the metal material and the material substrate/material layer and also onto the top and/or sides of the metal material. Graphene material is removed from the top and sides of the metal material and then the metal material is removed, leaving only the graphene layer that was formed on the bottom of the metal material. In some cases graphene material that formed on one or more side of the sides of the metal material is not removed so that a vertical graphene material layer is formed.

Method Of Forming Graphene On A Surface

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US Patent:
20120258587, Oct 11, 2012
Filed:
Apr 6, 2012
Appl. No.:
13/441425
Inventors:
Francis J. Kub - Arnold MD, US
Travis Anderson - Alexandria VA, US
Boris N. Feygelson - Springfield VA, US
Assignee:
The Government of the United States of America, as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 21/283
C23C 14/48
B05D 3/02
C23C 16/26
B82Y 40/00
US Classification:
438610, 4273741, 4272491, 427523, 977842, 257E21159
Abstract:
Methods of forming a graphene material on a surface are presented. A metal material is disposed on a material substrate or material layer and is infused with carbon, for example, by exposing the metal to a carbon-containing vapor. The carbon-containing metal material is annealed to cause graphene to precipitate onto the bottom of the metal material to form a graphene layer between the metal material and the material substrate/material layer and also onto the top and/or sides of the metal material. Graphene material is removed from the top and sides of the metal material and then the metal material is removed, leaving only the graphene layer that was formed on the bottom of the metal material. In some cases graphene material that formed on one or more side of the sides of the metal material is not removed so that a vertical graphene material layer is formed.

Method Of Forming Graphene On A Surface

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US Patent:
20130189444, Jul 25, 2013
Filed:
Mar 5, 2013
Appl. No.:
13/785081
Inventors:
Francis J. Kub - Amold MD, US
Travis Anderson - Alexandria VA, US
Boris N. Feygelson - Springfield VA, US
Assignee:
The Government of the United States of America, as represented by the Secretary of the Navy - Washington DC
International Classification:
C01B 31/04
US Classification:
427523, 4273741, 4272491
Abstract:
Methods of forming a graphene material on a surface are presented. A metal material is disposed on a material substrate or material layer and is infused with carbon, for example, by exposing the metal to a carbon-containing vapor. The carbon-containing metal material is annealed to cause graphene to precipitate onto the bottom of the metal material to form a graphene layer between the metal material and the material substrate/material layer and also onto the top and/or sides of the metal material. Graphene material is removed from the top and sides of the metal material and then the metal material is removed, leaving only the graphene layer that was formed on the bottom of the metal material. In some cases graphene material that formed on one or more side of the sides of the metal material is not removed so that a vertical graphene material layer is formed.

Diamond And Diamond Composite Material

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US Patent:
20130306988, Nov 21, 2013
Filed:
May 21, 2013
Appl. No.:
13/899433
Inventors:
Francis J. Kub - Arnold MD, US
Boris N. Feygelson - Springfield VA, US
Scooter Johnson - Hyattsville MD, US
Assignee:
The Government of the United States of America, as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 29/16
H01L 21/04
US Classification:
257 77, 438105
Abstract:
A structure having: a substrate and a diamond layer on the substrate having diamond nanoparticles. The diamond nanoparticles are formed by colliding diamond particles with the substrate. A method of: directing an aerosol of submicron diamond particles toward a substrate, and forming on the substrate a diamond layer of diamond nanoparticles formed by the diamond particles colliding with the substrate.

Diamond And Diamond Composite Material

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US Patent:
20130306989, Nov 21, 2013
Filed:
May 21, 2013
Appl. No.:
13/899444
Inventors:
Francis J. Kub - Arnold MD, US
Boris N. Feygelson - Springfield VA, US
Scooter Johnson - Hyattsville MD, US
Assignee:
The Government of the United States of America, as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 29/16
H01L 21/04
US Classification:
257 77, 438105
Abstract:
A structure having: a substrate and a diamond layer on the substrate having diamond nanoparticles. The diamond nanoparticles are formed by colliding diamond particles with the substrate. A method of: directing an aerosol of submicron diamond particles toward a substrate, and forming on the substrate a diamond layer of diamond nanoparticles formed by the diamond particles colliding with the substrate.

Nanocrystalline Alpha Alumina And Method For Making The Same

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US Patent:
20190284058, Sep 19, 2019
Filed:
May 31, 2019
Appl. No.:
16/427437
Inventors:
- Arlington VA, US
John Drazin - Alexandria VA, US
Dana A. Kazerooni - McLean VA, US
Boris N. Feygelson - Springfield VA, US
Assignee:
The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA
International Classification:
C01F 7/02
B02C 17/10
C01F 7/34
Abstract:
A process for producing metastable nanocrystalline alpha-alumina (α-AlO) having particle sizes smaller than 12 nm. Starting crystallites of α-AlOhaving a particle size larger than 12 nm, typically on the order of about 50 nm, are ball-milled at low temperatures to produce a nanocrystalline α-AlOpowder having a particle size of less than 12 nm, i.e., below the theoretical room temperature thermodynamic size limit at which α-AlOchanges phase to γ-AlO, wherein the powder remains in the α-AlOphase at all times.

Transition Metal-Bearing Capping Film For Group Iii-Nitride Devices

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US Patent:
20170316952, Nov 2, 2017
Filed:
May 1, 2017
Appl. No.:
15/582785
Inventors:
- Arlington VA, US
Boris N. Feygelson - Springfield VA, US
Andrew D. Koehler - Alexandria VA, US
Karl D. Hobart - Alexandria VA, US
Francis J. Kub - Arnold MD, US
Jordan Greenlee - Vienna VA, US
Assignee:
The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA
International Classification:
H01L 21/324
H01L 21/306
H01L 21/265
H01L 29/20
H01L 21/02
Abstract:
An method of annealing by: providing a substrate having a III-nitride, sapphire, silicon, diamond, gallium arsenide, or silicon carbide surface; depositing a layer of a transition metal nitride directly on the surface; and annealing the substrate at at least 900 C. in an oxygen-free environment. An article having: a substrate having a III-nitride, sapphire, silicon, diamond, gallium arsenide, or silicon carbide surface; and a layer of a transition metal nitride directly on the surface.
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Boris N Feygelson from Springfield, VA, age ~67 Get Report