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Boris Te Druz

from Brooklyn, NY
Age ~77
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Also known as:
Boriss Druz
Phone and address:
2522 1St St, Brooklyn, NY 11223
(718) 376-2264
Related to:
Lev Shekhtman, 75David Shekhtman, 76Mila Shekhtman, 49Gersom Shekhtman, 77Yudmila DruzMikhail Shekhtman, 48
Connected to:
Justin R Druzak, 43Edward D Druzba, 79Melissa B Druzba, 55Mary E Druzbick, 59Marco Druzetich, 38Nelya R Druzhinina, 73Nikolai Druzhinin, 33Frank T Druzisky, 86Denise A Drvol, 64Albert Drwal, 58

Boris Druz Phones & Addresses

  • 2522 1St St, Brooklyn, NY 11223 (718) 376-2264 (718) 376-3481
  • 2522 W 1St St #1, Brooklyn, NY 11223 (718) 376-2264
  • 2522 W 1St St APT P, Brooklyn, NY 11223
  • 1721 14Th St, Brooklyn, NY 11229 (718) 376-3481 (718) 376-8307
  • Northvale, NJ
  • Rotonda West, FL
  • North Brunswick, NJ
  • Hallandale Beach, FL
  • Gouldsboro, PA
  • North Port, FL
  • Mamaroneck, NY
  • Sarasota, FL

Resumes

Resumes

Boris Druz Photo 1

Director Of Advanced Development At Veeco Instruments, Inc

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Position:
Director of Advanced Development at Veeco Instruments, Inc
Location:
Greater New York City Area
Industry:
Nanotechnology
Work:
Veeco Instruments, Inc
Director of Advanced Development
Education:
Phd in Technical Sciences
Boris Druz Photo 2

Boris Druz

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Boris Druz Photo 3

Boris Druz

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Publications

Us Patents

Method For Repetitive Ion Beam Processing With A Carbon Containing Ion Beam

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US Patent:
6464891, Oct 15, 2002
Filed:
Mar 17, 1999
Appl. No.:
09/270998
Inventors:
Boris L. Druz - Brooklyn NY
Kurt E. Williams - Flushing NY
Alan V. Hayes - Centerport NY
Assignee:
Veeco Instruments, Inc. - Plainview NY
International Classification:
B44C 122
US Classification:
216 67, 134 1, 134 11, 134 221, 216 66, 20419211, 20419234
Abstract:
A method is provided for a repetitive deposition and etch of a substrate using a carbon containing ion beam in a gridded ion source. The method includes the actual ion beam processing step combined with the thermal and chemical conditioning of the ion source and a special cleaning step(s). The special cleaning step(s) effect robust removal of the precipitates accumulated in the operating source due to the decomposition of carbon containing gases such as hydrocarbons and halocarbons Precipitate removal is achieved by employing ions and radicals formed in an inert gas plasma or a mixture of inert gas and oxygen to reactively etch or bombard the precipitates.

Method And Apparatus For Controlling Film Profiles On Topographic Features

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US Patent:
6716322, Apr 6, 2004
Filed:
Apr 19, 2002
Appl. No.:
10/126928
Inventors:
Hari Hedge - Little Neck NY
Alan V. Hayes - Centerport NY
Boris Druz - Brooklyn NY
Viktor Kanarov - Bellmore NY
Adrian J. Devasahayam - Woodmere NY
Emmanuel Lakios - Mt. Sinai NY
Assignee:
Veeco Instruments Inc. - Woodbury NY
International Classification:
C23C 1434
US Classification:
20419211, 20419212, 20429804, 20429811, 118504, 427569, 4272481
Abstract:
A deposition system includes a substrate holder supporting a substrate defining at least one topographical feature. In addition, the system includes a deposition plume that is directed toward the substrate. A first profiler mask is positioned between the deposition plume and the substrate, and is shaped so as to reduce inboard/outboard asymmetry in a deposition profile associated with the feature.

Charged Particle Source And Operation Thereof

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US Patent:
7183716, Feb 27, 2007
Filed:
Feb 4, 2004
Appl. No.:
10/772132
Inventors:
Viktor Kanarov - Bellmore NY, US
Alan V. Hayes - Centerport NY, US
Rustam Yevtukhov - Briarwood NY, US
Ira Reiss - New City NY, US
Adrian Celaru - Massapequa NY, US
Kurt E. Williams - Seaford NY, US
Carlos Fernando de Mello Borges - Central Islip NY, US
Boris L. Druz - Brooklyn NY, US
Renga Rajan - Dix Hills NY, US
Hari Hegde - Little Neck NY, US
Assignee:
Veeco Instruments, Inc. - Woodbury NY
International Classification:
H01J 7/24
US Classification:
31511151, 15634549, 118723 I
Abstract:
A charged particle source utilizes a novel plasma processing chamber, RF coil and ion optics, to achieve high uniformity. The plasma processing chamber has a re-entrant vessel which is movable, and which includes extensions of adjustable shape or position, to make more uniform the plasma contained within the chamber. One or more magnets, which may be static or moving, may be included within the re-entrant vessel. The ion optics include a grid with a number of apertures, and tuning features each surrounding an aperture. These tuning features either reduce the diameter of the associated aperture, or increase the length of that aperture, to create more uniform beamlets emerging from the grid. The RF coil includes a flux concentrator positioned adjacent to the winding in at least one angular region thereof to tune the magnetic field produced thereby.

Ion Sources And Methods For Generating An Ion Beam With A Controllable Ion Current Density Distribution

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US Patent:
7557362, Jul 7, 2009
Filed:
Feb 26, 2007
Appl. No.:
11/678979
Inventors:
Rustam Yevtukhov - Briarwood NY, US
Alan V. Hayes - Great Neck NY, US
Viktor Kanarov - Bellmore NY, US
Boris L. Druz - Brooklyn NY, US
Assignee:
Veeco Instruments Inc. - Woodbury NY
International Classification:
H01J 49/10
H01J 1/50
H01J 37/08
US Classification:
250423R, 250424, 250396 ML, 31511121, 31511181, 31511101, 118723 I
Abstract:
Ion sources and methods for generating an ion beam with a controllable ion current density distribution. The ion source includes a discharge chamber and an electromagnet adapted to generate a magnetic field for changing a density distribution of the plasma inside the discharge chamber and, thereby, to change the ion current density distribution.

Method And Apparatus For Surface Processing Of A Substrate

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US Patent:
7879201, Feb 1, 2011
Filed:
Aug 11, 2004
Appl. No.:
10/915745
Inventors:
Boris Druz - Brooklyn NY, US
Viktor Kanarov - Bellmore NY, US
Alan V. Hayes - Centerport NY, US
Emmanuel Lakios - Mount Sinai NY, US
Assignee:
Veeco Instruments Inc. - Woodbury NY
International Classification:
C23C 14/00
C23C 14/32
C25B 9/00
C25B 11/00
C25B 13/00
US Classification:
20419211, 20419212, 20419232, 20419234, 20429811, 20429827
Abstract:
Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180 to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture.

Apparatus For Cathodic Vacuum-Arc Coating Deposition

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US Patent:
8157976, Apr 17, 2012
Filed:
Apr 26, 2007
Appl. No.:
11/740592
Inventors:
Boris Druz - Brooklyn NY, US
Ivan I. Aksenov - Kharkov, UA
Olexandr A. Luchaninov - Kharkov, UA
Volodymyr E. Strelnytskiy - Kharkov, UA
Volodymyr V. Vasylyev - Kharkov, UA
Isaak Zaritskiy - Copiague NY, US
Piero Sferlazzo - Marblehead MA, US
Assignee:
Veeco Instruments, Inc. - Woodbury NY
International Classification:
C23C 14/00
C23C 16/00
H01L 21/306
US Classification:
20429841, 15634549, 118723 IR
Abstract:
Apparatus for cathodic vacuum-arc coating deposition. The apparatus includes a mixing chamber, at least one input duct projecting from a first end wall of the mixing chamber, and an output duct projecting from a second end wall of the mixing chamber. Coupled with each input duct is a plasma source adapted to discharge an ion flow of a coating material into the mixing chamber, which is subsequently directed to the output duct. A first solenoidal coil disposed about a side wall of the mixing chamber creates a first magnetic field inside the mixing chamber for steering the ion flow. A second solenoidal coil is disposed adjacent to the first end wall and aligned substantially coaxially with the output duct. The second solenoidal coil creates a second magnetic field inside the mixing chamber for steering the first ion flow. The electrical currents flow through the first and second solenoidal coils in opposite solenoidal directions.

Methods Of Operating An Electromagnet Of An Ion Source

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US Patent:
8158016, Apr 17, 2012
Filed:
Feb 26, 2008
Appl. No.:
12/037598
Inventors:
Alan V. Hayes - Great Neck NY, US
Rustam Yevtukhov - Briarwood NY, US
Viktor Kanarov - Bellmore NY, US
Boris L. Druz - Brooklyn NY, US
Assignee:
Veeco Instruments, Inc. - Woodbury NY
International Classification:
G01L 21/30
B44C 1/22
US Classification:
216 59, 216 66, 216 67
Abstract:
Methods of operating an electromagnet of an ion source for generating an ion beam with a controllable ion current density distribution. The methods may include generating plasma in a discharge space of the ion source, generating and shaping a magnetic field in the discharge space by applying a current to an electromagnet that is effective to define a plasma density distribution, extracting an ion beam from the plasma, measuring a distribution profile for the ion beam density, and comparing the actual distribution profile with a desired distribution profile for the ion beam density. Based upon the comparison, the current applied to the electromagnet may be adjusted either manually or automatically to modify the magnetic field in the discharge space and, thereby, alter the plasma density distribution.

Method And Process For Fabricating Read Sensors For Read-Write Heads In Mass Storage Devices

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US Patent:
20060292705, Dec 28, 2006
Filed:
Jun 24, 2005
Appl. No.:
11/166322
Inventors:
Ming Mao - Pleasanton CA, US
Boris Druz - Brooklyn NY, US
Adrian Devasahayam - Commack NY, US
Assignee:
Veeco Instruments Inc. - Woodbury NY
International Classification:
H01L 21/00
US Classification:
438003000
Abstract:
Method and process for fabricating a device structure for a read head of a mass storage device. A polish stop layer formed of a relatively hard material, such as diamond-like carbon, is positioned between a layer stack and a resist mask used to mask regions of the layer stack during ion milling that removes portions of the layer stack to define a read sensor. The resist mask is removed, after the read sensor is defined, by a planarization process, which eliminates the need to lift-off the resist mask with a conventional chemical-based process. An electrical isolation layer of a material, such as AlO, is formed on the masked read sensor. In addition or alternatively, the electrical isolation layer may be formed using an atomic layer deposition (ALD) process performed at an elevated temperature that would otherwise hard bake the resist mask.
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Boris Te Druz from Brooklyn, NY, age ~77 Get Report