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Bora Onat Phones & Addresses

  • 6 Chase Ct, Trenton, NJ 08691 (609) 223-2100
  • Robbinsville, NJ
  • 47 Hoover Ave, Princeton, NJ 08540
  • 999 Hidden Lake Dr, North Brunswick, NJ 08902 (732) 940-4351
  • Sunnyvale, CA
  • Iselin, NJ
  • Middletown, RI
  • Emmaus, PA
  • Somerset, NJ
  • N Brunswick, NJ

Business Records

Name / Title
Company / Classification
Phones & Addresses
Bora Onat
Principal Investigator
Princeton Lightwave Inc
Mfg Electrical Equipment/Supplies · Mfg Electrical Equipment/Supplies Mfg Semiconductors/Related Devices · All Other Misc Mfg
2555 Us Hwy 130, East Windsor, NJ 08512
(609) 495-2600, (609) 395-9114

Publications

Us Patents

Solid State Focal Plane Array For Hyperspectral Imaging Applications

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US Patent:
8247754, Aug 21, 2012
Filed:
Mar 20, 2009
Appl. No.:
12/408243
Inventors:
Bora Muammer Onat - Princeton NJ, US
Assignee:
Princeton Lightwave, Inc. - Cranbury NJ
International Classification:
H01L 27/142
US Classification:
2502081, 250226
Abstract:
A focal plane array suitable for use in hyperspectral imaging applications is provided. The focal plane array comprises pixels comprising arrays of photodiodes, wherein each photodiode in each array is selectively sensitive to a different wavelength of a set of wavelengths.

Optoelectronic Device Doped To Augment An Optical Power Threshold For Bandwidth Collapse And A Method Of Manufacture Therefor

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US Patent:
20030047791, Mar 13, 2003
Filed:
Sep 13, 2001
Appl. No.:
09/951182
Inventors:
Edward Flynn - Summit NJ, US
Leonard Gruezke - Oakhurst NJ, US
David Lang - Madison NJ, US
Bora Onat - North Brunswick NJ, US
P. Yoder - New Providence NJ, US
Assignee:
Agere Systems Optoelectronics Guardian Corp. - Orlando FL
International Classification:
H01L031/00
US Classification:
257/450000, 257/461000, 257/463000, 257/189000
Abstract:
The present invention provides an improved optoelectronic device and a method of manufacture therefor. The optoelectronic device includes a doped buffer layer located over a substrate having an optical window formed therein and an absorber layer located over the doped buffer layer. The optoelectronic device further includes a doped region located over the absorber layer and having a dopant tail that extends substantially through the absorber layer, and the doped buffer layer and the dopant tail are doped to augment an optical power threshold for bandwidth collapse of the optoelectronic device.

Monolithic Dual Band Imager

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US Patent:
20100051809, Mar 4, 2010
Filed:
Sep 1, 2009
Appl. No.:
12/551667
Inventors:
Bora Muammer Onat - Princeton NJ, US
Mark Allen Itzler - Princeton NJ, US
Assignee:
PRINCETON LIGHTWAVE, INC. - Cranbury NJ
International Classification:
H01L 31/09
H01L 31/0352
US Classification:
250332, 257 21, 257E31033
Abstract:
An imaging sensor for imaging scenes based on both shortwave infrared and midwave infrared radiation is disclosed. The imaging sensor comprises pixels that include a photodiode that is selectively sensitive to shortwave infrared radiation based upon its bias voltage.

Process For Hybrid Integration Of Focal Plane Arrays

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US Patent:
20130153645, Jun 20, 2013
Filed:
Nov 19, 2012
Appl. No.:
13/680825
Inventors:
Princeton Lightwave, Inc. - Cranbury NJ, US
Sabbir Sajjad Rangwala - West Windsor NJ, US
Bora Muammer Onat - Robbinsville NJ, US
Domenick Salvemini - North Plainfield NJ, US
Assignee:
PRINCETON LIGHTWAVE, INC. - Cranbury NJ
International Classification:
H01L 23/00
US Classification:
22818022
Abstract:
A method for aligning a first substrate relative to a second substrate by enabling reflow of low-melting-temperature solder bumps is disclosed. Reflow of the solder bumps induces a force that moves one substrate relative to the other to improve alignment accuracy between bond pads located on each substrate. The method further enables reduction of surface oxide on the solder bumps that would otherwise inhibit reliable solder joint formation.
Bora M Onat from Robbinsville, NJ, age ~53 Get Report