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Blanca Es Kruse

from Maricopa, AZ
Age ~67
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Also known as:
Blanca E Kruse, Blanca H Kruse, Blanca Estela Valdez, Blanca E Valdez, Blanca E Gutierrez, Blanca E Kruise, Blance Kruse, Blanca Kayser, Blanca Maricopa, Blancae Gutierrez
Phone and address:
40057 W Hayden Dr, Maricopa, AZ 85138
(520) 466-6966
Related to:
Gabriel Gutierrez, 53John Kruse, 87Maria Gutierrez, 61Anita Valdez, 83Efrain Gutierrez, 76
Connected to:
Amber Kruse, 41Anne H Kruse, 62Bailey C Kruse, 29Belinda L Kruse, 73Bethany L Kruse, 39Brenna M Kruse, 42Cam R Kruse, 62Candice D Kruse, 40Carly S Kruse, 37Carol H Kruse, 62

Blanca Kruse Phones & Addresses

  • 40057 W Hayden Dr, Maricopa, AZ 85138 (520) 466-6966
  • 41229 W Cielo Ln, Maricopa, AZ 85138 (520) 494-7648
  • 1143 Benito Dr W #759, Arizona City, AZ 85223 (520) 243-0441
  • 11189 W Benito Dr, Arizona City, AZ 85123
  • 1175 W Pecos Rd, Chandler, AZ 85224 (602) 509-6531
  • Phoenix, AZ
  • Casa Grande, AZ
  • Pinedale, AZ
  • 41229 W Cielo Ln, Maricopa, AZ 85138 (602) 224-5324

Resumes

Resumes

Blanca Kruse Photo 1

Product Engineering

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Location:
41229 west Cielo Ln, Maricopa, AZ 85138
Industry:
Semiconductors
Work:
On Semiconductor Jul 1986 - Dec 2011
New Product Development
On Semiconductor Jul 1986 - Dec 2011
Product Engineering
Phoenix Transformers Mar 1982 - Jun 1986
Assistant Supervisor
Education:
University of Phoenix
Gateway Community College
Skills:
Semiconductors
Semiconductor Industry
Design of Experiments
Product Engineering
Failure Analysis
Spc
Electronics
Ic
Manufacturing
Six Sigma
Product Development
Silicon
Metrology
Characterization
Cross Functional Team Leadership
Yield
Jmp
Engineering Management
Program Management
Continuous Improvement
Cmos
Power Management
Hardware Architecture
Device Characterization
Dmaic
Process Engineering
Test Engineering
Mixed Signal
Asic
Analog
Soc
Root Cause Analysis
Simulations
Design For Manufacturing
Process Integration
Eda
Mems
Power Supplies
Manufacturing Operations
Test Equipment
Thin Films
Process Simulation
Technical Marketing
Microelectronics
Cvd
Reliability
Testing
Analog Circuit Design
Fmea
Circuit Design
Interests:
New Technology
Skydiving
Traveling
Hiking
Sports
Blanca Kruse Photo 2

Npd Technician At On Semiconductor

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Position:
NPD Technician at ON Semiconductor
Location:
United States
Industry:
Semiconductors
Work:
ON Semiconductor
NPD Technician

Publications

Us Patents

Schottky Diode And Method Of Manufacture

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US Patent:
7279390, Oct 9, 2007
Filed:
Mar 21, 2005
Appl. No.:
11/084471
Inventors:
Mark Duskin - Scottsdale AZ, US
Blanca Estela Kruse - Arizona City AZ, US
Assignee:
Semiconductor Components Industries, L.L.C. - Phoenix AZ
International Classification:
H01L 21/8222
US Classification:
438328, 257E21357, 257E2704
Abstract:
A Schottky diode capable of sustaining a breakdown voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer disposed on a semiconductor substrate has a thickness of at least about 15 micrometers and an impurity concentration ranging from about 1×10atoms per cubic centimeter to about 1×10atoms per cubic centimeter. A guard ring extends from about 3 micrometers to about 15 micrometers into the epitaxial layer. A dielectric material is formed over the epitaxial layer and a portion of the dielectric material is removed to expose a portion of the guard ring and a portion of the epitaxial layer within the guard ring. An electrically conductive material is formed over the exposed portion of the epitaxial layer and an electrically conductive material is formed in contact with a bottom surface of the semiconductor substrate.

Schottky Diode And Method Of Manufacture

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US Patent:
7820473, Oct 26, 2010
Filed:
Mar 21, 2005
Appl. No.:
11/084524
Inventors:
Linghui Chen - Gilbert AZ, US
Blanca Estela Kruse - Arizona City AZ, US
Mark Duskin - Scottsdale AZ, US
John D. Moran - Mesa AZ, US
Assignee:
Semiconductor Components Industries, LLC - Phoenix AZ
International Classification:
H01L 21/00
US Classification:
438 92, 438167, 438169, 438534, 438570, 257E21359, 257E21368
Abstract:
A Schottky diode capable of sustaining a voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer of N-type conductivity is disposed on a semiconductor substrate of N-type conductivity. A guard ring of P-type conductivity extends into the epitaxial layer from its surface. A stacked structure is formed on a portion of the guard ring and a portion of the epitaxial layer. The stacked structure includes a layer of semi-insulating semiconductor material disposed on a layer of dielectric material. A first metal layer is formed on the portion of the epitaxial layer adjacent a first side of the stacked structure and on a first portion of the stacked structure. A second metal layer is formed on the portion of the epitaxial layer adjacent a second side of the stacked structure and on a second portion of the stacked structure.

Flip Chip Structure And Method Of Manufacture

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US Patent:
8501612, Aug 6, 2013
Filed:
Sep 20, 2007
Appl. No.:
11/858289
Inventors:
John D. Moran - Mesa AZ, US
Blanca Kruse - Maricopa AZ, US
Amilcar B. Gamez Sanchez - Chandler AZ, US
Assignee:
Semiconductor Components Industries, LLC - Phoenix AZ
International Classification:
H01L 21/44
US Classification:
438612, 257690
Abstract:
A flip chip structure includes glass stand-offs formed overlying a substrate surface. A conductive layer is formed overlying the glass stand-offs and configured for attaching to a next level of assembly. In one embodiment, photo glass processing is used to form the glass stand-offs.

Semiconductor Diode And Method Therefor

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US Patent:
20060084221, Apr 20, 2006
Filed:
Oct 18, 2004
Appl. No.:
10/966519
Inventors:
John Moran - Mesa AZ, US
Blanca Kruse - Arizona City AZ, US
Jose Moreno - Queen Creek AZ, US
International Classification:
H01L 21/8234
US Classification:
438237000
Abstract:
In one embodiment, a diode is formed with anodes on two surfaces of a semiconductor substrate.
Control profile
Blanca Es Kruse from Maricopa, AZ, age ~67 Get Report