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Bikram Kapoor

from Trumbull, CT
Age ~52
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Also known as:
Vikram Kapoor, Bakram Kapoor, Kapoor Bakram, Bikramk Poor, A Poor
Phone and address:
58 Sabina Rd, Bridgeport, CT 06611
Related to:
Swatantar KapoorJaya KapoorAshok PrabhakarJaya Kapoor, 53
Connected to:
A Kapoor, 53Aashish Kapoor, 39Achal D Kapoor, 53Akshay Kapoor, 33Amit Kapoor, 49Anoop Kapoor, 74Arun K Kapoor, 37Arushi Kapoor, 28Divye Kapoor, 36Florence M Kapoor, 80

Bikram Kapoor Phones & Addresses

  • 58 Sabina Rd, Trumbull, CT 06611
  • 2138 Santa Cruz Ave, Santa Clara, CA 95051
  • New York, NY
  • Wadsworth, IL
  • Evanston, IL
  • Jersey City, NJ
  • Livingston, NJ
  • San Jose, CA
  • Minneapolis, MN
  • Oak Creek, WI

Resumes

Resumes

Bikram Kapoor Photo 1

Founder

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Location:
58 Sabina Rd, Trumbull, CT 06611
Industry:
Financial Services
Work:
Ge
Commodity and Merchant Risk Leader
Florida Power & Light Sep 2013 - May 2015
Director, Power Marketing and Origination
Xanthus Capital Management, Llc Apr 2012 - Sep 2013
Proprietary Trader
Nomura Jul 2010 - Mar 2012
Vice President, Us Cash Equities Trading
Barclays Investment Bank Sep 2008 - Jun 2010
Assistant Vice President, Power Sales and Structuring, Global Commodities
Education:
Northwestern University - Kellogg School of Management 2005 - 2007
Master of Business Administration, Masters, Finance University of Minnesota 1996 - 1998
Master of Science, Masters, Agricultural Engineering Indian Institute of Technology, Bombay 1990 - 1995
Masters, Chemical Engineering St John's High School
Skills:
Derivatives
Trading
Capital Markets
Valuation
Financial Modeling
Portfolio Management
Equities
Management
Strategy
Semiconductor Industry
Competitive Analysis
Options
Security Analysis
Semiconductors
P&L Accountability
International Business Operations
Product Development and Product Marketing
Product Management
Analysis
Due Diligence
Commodity
Business Strategy
Risk Management
Financial Services
Financial Analysis
Business Development
Project Management
Project Finance
Financial Structuring
Product Development
Structured Finance
Natural Gas
Commodity Markets
Analytical Skills
Renewable Energy
Python
Sql
Microsoft Excel
Visual Basic For Applications
Microsoft Powerpoint
Leadership
Presentations
Negotiation
Interpersonal Skills
Electricity Markets
Energy Storage
Futures Trading
Commodity Risk Management
Structured Commodity Finance
Data Analytics
Risk Analytics
Predictive Analytics
Energy Markets
Contract Negotiation
Solar Energy
Customer Relationship Management
Cross Functional Team Leadership
Real Estate
Renewable Energy Policy
Bikram Kapoor Photo 2

Bikram Kapoor

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Publications

Us Patents

High Density Plasma Cvd Process For Gapfill Into High Aspect Ratio Features

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US Patent:
6802944, Oct 12, 2004
Filed:
Oct 23, 2002
Appl. No.:
10/279961
Inventors:
Farhan Ahmad - Singapore, SG
Michael Awdshiew - Singapore, SG
Alok Jain - Singapore, SG
Bikram Kapoor - Santa Clara CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1434
US Classification:
20419223, 20419232, 20419237, 216 63, 216 67, 216 80, 427331, 42725528, 427578, 427307, 427314, 427402, 427534
Abstract:
A method of depositing a film on a substrate. In one embodiment, the method includes depositing a first portion of the film using a high density plasma to partially fill a gap formed between adjacent features formed on the substrate. The film deposition process is then stopped before or shortly after the entry of the gap pinches off and the film is etched to widen entry to the gap using a two step etching process that includes a first physical etch step that forms a plasma from a sputtering agent introduced into the processing chamber and biases the plasma towards the substrate and a subsequent chemical etch step that forms a plasma from a reactive etchant gas introduced into the processing chamber. After the etching sequence is complete, a second portion of the film is deposited over the first portion using a high density plasma to further fill the gap.

Hydrogen Assisted Hdp-Cvd Deposition Process For Aggressive Gap-Fill Technology

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US Patent:
6808748, Oct 26, 2004
Filed:
Jan 23, 2003
Appl. No.:
10/350445
Inventors:
Bikram Kapoor - Santa Clara CA
M. Ziaul Karim - San Jose CA
Anchuan Wang - Fremont CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1640
US Classification:
42725531, 42725537, 42725538, 427575, 438695
Abstract:
A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with high D/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lower D/S ratio of, for example, 3-10.

Hdp-Cvd Uniformity Control

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US Patent:
6890597, May 10, 2005
Filed:
May 9, 2003
Appl. No.:
10/435296
Inventors:
Padmanabhan Krishnaraj - San Francisco CA, US
Bruno Geoffrion - San Jose CA, US
Michael S. Cox - Davenport CA, US
Lin Zhang - San Jose CA, US
Bikram Kapoor - Santa Clara CA, US
Anchuan Wang - Fremont CA, US
Zhenjiang Cui - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C016/40
US Classification:
4272481, 42725537, 427355, 438692, 438697, 438788
Abstract:
A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.

Hdp-Cvd Multistep Gapfill Process

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US Patent:
7205240, Apr 17, 2007
Filed:
Jun 4, 2003
Appl. No.:
10/456611
Inventors:
M. Ziaul Karim - San Jose CA, US
Bikram Kapoor - Santa Clara CA, US
Anchuan Wang - Fremont CA, US
Dong Qing Li - Santa Clara CA, US
Katsunari Ozeki - Chiba, JP
Manoj Vellaikal - Santa Clara CA, US
Zhuang Li - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/00
US Classification:
438694, 438695, 438692, 438424, 438435, 42725523, 42725528, 42725537, 216 59, 216 67, 216 79, 15634524, 15634533, 15634548, 118696, 118697, 118723 I, 118723 IR
Abstract:
A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes Hduring the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.

Oxygen Plasma Treatment For Enhanced Hdp-Cvd Gapfill

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US Patent:
7229931, Jun 12, 2007
Filed:
Jun 16, 2004
Appl. No.:
10/870232
Inventors:
Hemant P. Mungekar - San Jose CA, US
Young S Lee - Santa Clara CA, US
Manoj Vellaikal - Santa Clara CA, US
Karen Greig - Santa Clara CA, US
Bikram Kapoor - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/31
H01L 21/469
US Classification:
438758, 257E21546, 438788, 438771
Abstract:
Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 10ions/cmfrom the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 10ions/cm. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.

Hydrogen Assisted Hdp-Cvd Deposition Process For Aggressive Gap-Fill Technology

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US Patent:
7595088, Sep 29, 2009
Filed:
Aug 10, 2004
Appl. No.:
10/915781
Inventors:
Bikram Kapoor - Santa Cruz CA, US
M. Ziaul Karim - San Jose CA, US
Anchuan Wang - Fremont CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/00
C23C 16/40
H05H 1/24
US Classification:
4272481, 42725523, 42725537, 427569
Abstract:
A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with highD/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lowerD/S ratio of, for example, 3-10.

Reactive Ion Etching For Semiconductor Device Feature Topography Modification

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US Patent:
7628897, Dec 8, 2009
Filed:
Sep 12, 2003
Appl. No.:
10/660813
Inventors:
Hemant P. Mungekar - San Jose CA, US
Anjana M. Patel - San Jose CA, US
Manoj Vellaikal - Santa Clara CA, US
Anchuan Wang - Fremont CA, US
Bikram Kapoor - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 14/35
C23C 16/00
H01L 21/311
US Classification:
20419237, 20419232, 42725528, 42725537, 42725529, 438694, 438696, 438703, 438706, 438707, 438710, 438723
Abstract:
A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.

Microcontamination Abatement In Semiconductor Processing

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US Patent:
20050260356, Nov 24, 2005
Filed:
May 18, 2004
Appl. No.:
10/847922
Inventors:
Hemant Mungekar - San Jose CA, US
Bikram Kapoor - Santa Clara CA, US
Zhuang Li - San Jose CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
C23C016/00
US Classification:
427569000, 427248100, 427585000
Abstract:
A film is deposited over a substrate by flowing a process gas to a process chamber and flowing a fluent gas to the process chamber. The process gas includes a silicon-containing gas and an oxygen-containing gas. The fluent gas includes a flow of helium and a flow of molecular hydrogen, the flow of molecular hydrogen being provided at a flow rate less than 20% of a flow rate of the helium. A plasma is formed in the process chamber with a density greater than 10. The film is deposited over the substrate with the plasma.
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Bikram Kapoor from Trumbull, CT, age ~52 Get Report