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Bernard F Phlips

from Accokeek, MD
Age ~55

Bernard Phlips Phones & Addresses

  • 14411 Captain John Smith Dr, Accokeek, MD 20607 (301) 292-0355
  • 828 Leigh Mill Rd, Great Falls, VA 22066
  • New Haven, CT
  • Ft Washington, MD
  • 11307 Inglish Mill Dr, Great Falls, VA 22066 (301) 292-0355

Work

Position: Administrative Support Occupations, Including Clerical Occupations

Education

Degree: Graduate or professional degree

Publications

Us Patents

Neutron Detector With Gamma Ray Isolation

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US Patent:
7902513, Mar 8, 2011
Filed:
Mar 18, 2009
Appl. No.:
12/406262
Inventors:
Francis J. Kub - Arnold MD,
Bernard F. Phlips - Accokeek MD,
Karl D. Hobart - Upper Marlboro MD,
Eric A. Wulf - Arlington VA,
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
G01T 3/08
US Classification:
25037005
Abstract:
A silicon-on-insulator (SOI) neutron detector comprising a silicon-on-insulator structure, wherein the silicon-on-insulator structure consists of an active semiconductor layer, a buried layer, and a handle substrate, a lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure, and a neutron to high energy particle converter layer on the active semiconductor layer.

Methods And Systems Of Thick Semiconductor Drift Detector Fabrication

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US Patent:
7968959, Jun 28, 2011
Filed:
Oct 19, 2009
Appl. No.:
12/581710
Inventors:
Marc Christophersen - Alexandria VA,
Bernard F. Phlips - Great Falls VA,
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01L 31/115
H01L 21/00
US Classification:
257429, 257622, 257E21218, 257E31092, 25037001, 438 56
Abstract:
Gray-tone lithography technology is used in combination with a reactive plasma etching operation in the fabrication method and system of a thick semiconductor drift detector. The thick semiconductor drift detector is based on a trench array, where the trenches in the trench array penetrate the bulk with different depths. These trenches form an electrode. By applying different electric potentials to the trenches in the trench array, the silicon between neighboring trenches fully depletes. Furthermore, the applied potentials cause a drifting field for generated charge carriers, which are directed towards a collecting electrode.

Neutron Detector With Gamma Ray Isolation

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US Patent:
8008626, Aug 30, 2011
Filed:
Jan 21, 2011
Appl. No.:
13/010996
Inventors:
Francis J Kub - Arnold MD,
Bernard F Phlips - Accokeek MD,
Karl D Hobart - Upper Marlboro MD,
Eric A Wulf - Arlington VA,
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
G01T 3/08
US Classification:
25037005
Abstract:
A silicon-on-insulator (SOI) neutron detector comprising a silicon-on-insulator structure, wherein the silicon-on-insulator structure consists of an active semiconductor layer, a buried layer, and a handle substrate, a lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure, and a neutron to high energy particle converter layer on the active semiconductor layer.

Gray-Tone Lithography Using Optical Diffusers

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US Patent:
8372578, Feb 12, 2013
Filed:
Aug 21, 2008
Appl. No.:
12/195594
Inventors:
Marc Christophersen - Alexandria VA,
Bernard Phlips - Great Falls VA,
Assignee:
The United States of America, as represented by the Secretary of the Navy - Washington DC
International Classification:
G03F 7/20
US Classification:
430325, 430321
Abstract:
A method of: directing an exposing light through an optical diffuser; directing the diffused light though a photomask having transparent areas corresponding to a gray-tone pattern; directing the masked light onto a photoresist material on a substrate; developing the photoresist to produce a three dimensional structure in the photoresist.

Methods And Systems Of Isolating Segmented Radiation Detectors Using Alumina

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US Patent:
8481953, Jul 9, 2013
Filed:
Feb 29, 2012
Appl. No.:
13/408852
Inventors:
Marc Christophersen - Berwyn Heights MD,
Bernard F. Phlips - Great Falls VA,
Assignee:
The United States of America, as represented by the Secretary of the Navy - Washington DC
International Classification:
G01T 1/24
US Classification:
25037001
Abstract:
Radiation detectors can be made of n-type or p-type silicon. All segmented detectors on p-type silicon and double-sided detectors on n-type silicon require an “inter-segment isolation” to separate the n-type strips from each other; an alumina layer for isolating the strip detectors is applied, and forms negative charges at the silicon interface with appropriate densities. When alumina dielectric is deposited on silicon, the negative interface charge acts like an effective p-stop or p-spray barrier because electrons are “pushed” away from the interface due to the negative interface charge.

Compton Scatter Imaging Instrument

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US Patent:
2002000, Jan 24, 2002
Filed:
Apr 27, 2001
Appl. No.:
09/845107
Inventors:
James Kurfess - Gambrills MD,
Richard Kroeger - Bowie MD,
W. Johnson - Alexandria VA,
Bernard Phlips - Accokeek MD,
International Classification:
G01T001/24
US Classification:
250/370130, 250/370090, 250/385100
Abstract:
A device for determining the photon energy Eand direction cone angle of incident gamma ray includes a radiation detector for receiving an incident gamma ray having an unknown photon energy Eand an unknown direction and for scattering the gamma ray with two Compton scattering interactions and a subsequent scattering or absorption interaction. The detector provides three outputs, each output corresponding to one of the Compton scattering and the subsequent scattering or absorption interactions, to a processor, which is programmed to calculate the photon energy Eand direction cone angle of the incident gamma ray based on these outputs. The detector configuration, for example one that includes multiple detector layers, provides an accurate determination of both the position and energy of the incident gamma ray, while the calculation of the photon energy Eand direction cone angle of the incident gamma ray does not require absorption and measurement of the entire or substantially all the energy Ein the detector.

Wafer Bonded Silicon Radiation Detectors

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US Patent:
2006011, Jun 8, 2006
Filed:
Oct 25, 2005
Appl. No.:
11/258464
Inventors:
Bernard Phlips - Accokeek MD,
Francis Kub - Arnold MD,
Karl Hobart - Upper Marlboro MD,
James Kurfess - Gambrills MD,
International Classification:
G01T 1/24
US Classification:
250370010
Abstract:
An apparatus and method for operating a direct wafer bonded semiconductor radiation detector includes bonding a plurality of wafers, receiving a radiation signal from a radiation source thereby producing electron and hole pairs via the radiation signal interacting with the detecting device. A voltage source produces a voltage across the direct bonded wafers, thereby drifting the electrons and holes through the plurality of bonded layers. The drifted electrons and/or holes include total drifted charge information of the detector and are collected and processed either at the detector or remote from the detector.

Methods And Systems Of Curved Radiation Detector Fabrication

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US Patent:
2010026, Oct 21, 2010
Filed:
Oct 19, 2009
Appl. No.:
12/581469
Inventors:
Marc Christophersen - Alexandria VA,
Bernard F. Phlips - Great Falls VA,
Assignee:
US Gov't Represented by the Secretary of the Navy Office of Naval Research (ONR/NRL) code OOCCIP - Arlington VA
International Classification:
H01L 31/0352
H01L 31/18
US Classification:
257429, 257447, 438 56, 438 75, 257E31038
Abstract:
Gray tone lithography is used to form curved silicon topographies for semiconductor based solid-state imaging devices. The imagers are curved to a specific curvature and shaped directly for the specific application; such as curved focal planes. The curvature of the backside is independent from the front surface, which allows thinning of the detector using standard semiconductor processing.
Bernard F Phlips from Accokeek, MD, age ~55 Get Report