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Bayu Atmaja Thedjoisworo

from San Jose, CA
Age ~44
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Also known as:
Bayu A Thedjoisworo, Bayu Atmaja, Baju Atmaja, Thedjoisworo Bayu, Atmaja Bayu, Bayu D
Phone and address:
333 Santana Row APT 322, San Jose, CA 95128
Related to:
Bayu Atmaja
Connected to:
Michael F Theeck, 47Susanne B Theede, 51Muralidhar Theegala, 60Alex M Theel, 39Christian J Theel, 31Darin E Theel, 59Edward Theel, 57Max C Theel, 84Camela C Theeler, 49Susan S Theeman, 71

Bayu Thedjoisworo Phones & Addresses

  • 333 Santana Row APT 322, San Jose, CA 95128
  • Santa Clara, CA
  • Mountain View, CA
  • Stanford, CA
  • Sunnyvale, CA
  • Richmond, CA

Resumes

Resumes

Bayu Thedjoisworo Photo 1

Touch And Display Integration: Process And Materials

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Location:
San Francisco, CA
Industry:
Computer Hardware
Work:
Apple
Touch and Display Integration: Process and Materials
Lam Research Jul 2010 - Oct 2014
Staff Process Engineer
Stanford University Sep 2005 - Apr 2010
Graduate Student Reseacher In Chemical and Bioengineering
Ibm Jul 2004 - Aug 2005
Research Engineer In Electronics
Stanford University Sep 2003 - Mar 2004
Researcher In Biochemical Engineering
Education:
Stanford University 2005 - 2010
Doctorates, Doctor of Philosophy, Chemical Engineering, Philosophy University of California, Berkeley 1999 - 2002
Bachelors, Bachelor of Science, Chemical Engineering
Skills:
Product Development
Research
Process Engineering
Thin Films
Nanotechnology
Chemistry
Microsoft Office
Public Speaking
Biotechnology
Technical Communication
Chemical Engineering
Microsoft Excel
Microsoft Word
Teaching
Strategic Planning
Languages:
English
Mandarin
Indonesian
Bayu Thedjoisworo Photo 2

Process Development Engineer

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Position:
Process Development Engineer at Novellus Systems
Location:
San Francisco Bay Area
Industry:
Semiconductors
Work:
Novellus Systems since Jul 2010
Process Development Engineer
Stanford Univeristy - Stanford, CA Sep 2005 - Mar 2010
PhD graduate student
IBM Research - Almaden San Jose, CA Jul 2004 - Jul 2005
Research Engineer
Education:
Stanford University 2005 - 2010
PhD, Chemical Engineering UC Berkeley 1999 - 2002
B.S., Chemical Engineering

Publications

Us Patents

Photoresist Strip Processes For Improved Device Integrity

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US Patent:
20130048014, Feb 28, 2013
Filed:
Aug 20, 2012
Appl. No.:
13/590083
Inventors:
Roey Shaviv - Palo Alto CA, US
Kirk Ostrowski - San Jose CA, US
David Cheung - Foster City CA, US
Joon Park - Dublin CA, US
Bayu Thedjoisworo - Santa Clara CA, US
Patrick J. Lord - San Jose CA, US
International Classification:
B08B 7/00
B05B 1/18
US Classification:
134 11, 15634527
Abstract:
Provided herein are methods and apparatus of hydrogen-based photoresist strip operations that reduce dislocations in a silicon wafer or other substrate. According to various embodiments, the hydrogen-based photoresist strip methods can employ one or more of the following techniques: 1) minimization of hydrogen budget by using short processes with minimal overstrip duration, 2) providing dilute hydrogen, e.g., 2%-16% hydrogen concentration, 3) minimization of material loss by controlling process conditions and chemistry, 4) using a low temperature resist strip, 5) controlling implant conditions and concentrations, and 6) performing one or more post-strip venting processes. Apparatus suitable to perform the photoresist strip methods are also provided.

Selective Nitride Etch

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US Patent:
20160181116, Jun 23, 2016
Filed:
Dec 18, 2014
Appl. No.:
14/576020
Inventors:
- Fremont CA, US
Ivelin Angelov - Sunnyvale CA, US
Linda Marquez - San Jose CA, US
Faisal Yaqoob - Fremont CA, US
Pilyeon Park - Santa Clara CA, US
Helen H. Zhu - Fremont CA, US
Bayu Atmaja Thedjoisworo - San Jose CA, US
Zhao Li - Santa Clara CA, US
International Classification:
H01L 21/311
H01L 21/67
C09K 13/00
Abstract:
Methods of selectively etching silicon nitride are provided. Silicon nitride layers are exposed to a fluorinating gas and nitric oxide (NO), which may be formed by reacting nitrous oxide (NO) and oxygen (O) in a plasma. Methods also include defluorinating the substrate prior to turning off the plasma to increase etch selectivity of silicon nitride.
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Bayu Atmaja Thedjoisworo from San Jose, CA, age ~44 Get Report