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Barton Akiko Lane

from Oakland, CA
Age ~82
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Also known as:
Barton Elizabeth Lane, Barton F Lane, Barton D Lane, Barton P Lane, Barton L Lane, Frederick Lane Barton
Related to:
Sheila Marie Lane, 68Akiko Mizuno, 56Dixie L Franklin, 64Elizabeth A Trittipo, 50Alan H Franklin, 62Elizabeth A Lane, 84Suzanne E Franklin, 49Doctor Lane
Connected to:
A Lane, 93Abbott A Lane, 91Adrianna M Lane, 27Aisha A Lane, 39Akira H Lane, 66Alina L Lane, 38Angelo R Lane, 30Anne Lane, 64Anom D Lane, 45Anthony M Lane, 64

Barton Lane Phones & Addresses

  • Oakland, CA
  • Belmont, CA
  • 14262 Davos Dr, Truckee, CA 96161 (530) 587-4435
  • Ellicott City, MD
  • 6300 Wimbledon Ct, Elkridge, MD 21075 (410) 579-8175
  • Baltimore, MD
  • Los Altos, CA
  • Block Island, RI
  • Laurel, MD
  • Glenelg, MD

Professional Records

Medicine Doctors

Barton Lane Photo 1

Dr. Barton F Lane, Baltimore MD - MD (Doctor of Medicine)

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Specialties:
Diagnostic Radiology
Address:
22 S Greene St Suite N2E23, Baltimore, MD 21201
(410) 328-3477 (Phone), (410) 328-0641 (Fax)

UNIVERSITY OF MAR
22 S Greene St, Baltimore, MD 21201
(410) 328-6971 (Phone), (410) 328-8326 (Fax)
Certifications:
Diagnostic Radiology, 2006
Awards:
Healthgrades Honor Roll
Languages:
English
Hospitals:
22 S Greene St Suite N2E23, Baltimore, MD 21201

UNIVERSITY OF MAR
22 S Greene St, Baltimore, MD 21201

University of Maryland Medical Center
22 South Greene Street, Baltimore, MD 21201
Education:
Medical School
Univ Of MD Sch Of Med
Graduated: 2001
Medical School
Washington Hospital Center
Graduated: 2001
Medical School
University of Maryland School Medicine
Graduated: 2001
Medical School
Johns Hopkins University
Graduated: 2001
Barton Lane Photo 2

Dr. Barton Lane, Baltimore MD - MD (Doctor of Medicine)

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Specialties:
Neuroradiology
Address:
22 S Greene St Suite N2E16, Baltimore, MD 21201
(410) 328-3477 (Phone), (410) 328-0641 (Fax)

Baltimore Office
22 S Greene St, Baltimore, MD 21201
(410) 328-6971 (Phone), (410) 328-8326 (Fax)

VA PALO ALTO HEALTH CARE SYSTEM
3801 Miranda Ave, Palo Alto, CA 94304
(650) 493-5000 (Phone), (650) 852-3473 (Fax)
Certifications:
Diagnostic Radiology
Neuroradiology, 1996
Awards:
Healthgrades Honor Roll
Languages:
English
Spanish
Education:
Medical School
University of California At San Francisco
Graduated: 1968
Medical School
San Francisco General Hospital
Graduated: 1968
Medical School
Nyu Langone Medical Center
Graduated: 1968
Barton Lane Photo 3

Barton Frederick Lane, Baltimore MD

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Specialties:
Nuclear Medicine
Radiology
Diagnostic Radiology
Work:
University of Maryland
22 S Greene St, Baltimore, MD 21263
Univ. Of Md Medical System
10 N Greene St, Baltimore, MD 21201
Education:
University of Maryland(2001)
Barton Lane Photo 4

Barton Frederick Lane, Baltimore MD

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Specialties:
Radiologist
Address:
22 S Greene St, Baltimore, MD 21201
Education:
University of Maryland, School of Medicine - Doctor of Medicine
Johns Hopkins Hospital - Fellowship - Abdominal Imaging
University of Maryland Medical Center - Residency - Diagnostic Radiology
Washington Hospital Center - Internship - Internal Medicine
Board certifications:
American Board of Radiology Certification in Diagnostic Radiology (Radiology)
Barton Lane Photo 5

Barton Lane, Palo Alto CA

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Specialties:
Neuro-Radiologist
Address:
3801 Miranda Ave, Palo Alto, CA 94304
Education:
University of California San Francisco, School of Medicine - Doctor of Medicine
Board certifications:
American Board of Radiology Certification in Diagnostic Radiology (Radiology)
American Board of Radiology Sub-certificate in Neuroradiology (Radiology)

License Records

Barton F Lane

Address:
13112 Cox Ct, Ellicott City, MD
22 S Greene St, Baltimore, MD
Phone:
(410) 328-2731
License #:
3096 - Active
Category:
Health Care
Issued Date:
Aug 24, 2015
Effective Date:
Aug 24, 2015
Expiration Date:
Aug 23, 2017
Type:
Medical Doctor Expert Witness Certificate

Public records

Vehicle Records

Barton Lane

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Address:
13112 Cox Ct, Ellicott City, MD 21042
VIN:
5TDBK22C37S003651
Make:
Toyota
Model:
Sienna
Year:
2007

Business Records

Name / Title
Company / Classification
Phones & Addresses
Barton Frederick Lane
Barton Lane MD
Radiology
22 S Greene St, Baltimore, MD 21201
(410) 328-3477
Barton Nmi Lane
Barton Lane MD
Radiology
3801 Miranda Ave, Palo Alto, CA 94304
(650) 493-5000
Barton Lane
Medical Doctor
Veterans Health Administration
General Hospital Administrative Veterans' Affairs · Medical Doctor's Office Administrative Veterans' Affairs · Canteen Service · Administration of Veterans' Affairs · Other Individual and Family Services
3801 Miranda Ave, Palo Alto, CA 94304
(650) 493-5000, (650) 858-3965, (650) 852-3472

Publications

Us Patents

Use Of Modeled Parameters For Real-Time Semiconductor Process Metrology Applied To Semiconductor Processes

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US Patent:
7695984, Apr 13, 2010
Filed:
Apr 20, 2006
Appl. No.:
11/409308
Inventors:
Joseph R Monkowski - Danville CA, US
Barton Lane - Pleasanton CA, US
Assignee:
Pivotal Systems Corporation - Pleasanton CA
International Classification:
H01L 21/00
US Classification:
438 5, 438 9, 438 10, 438 14, 257E21528
Abstract:
Method and system for detecting endpoint for a plasma etch process are provided. In accordance with one embodiment, the method provides a semiconductor substrate having a film to be processed thereon. The film is processed in a plasma environment during a time period to provide for device structures. Information associated with the plasma process is collected. The information is characterized by a first signal intensity. Information on a change in the first signal intensity is extracted. The change in the first signal intensity has a second signal intensity. The change in signal intensity at the second signal intensity is associated to an endpoint of processing the film in the plasma environment. The second signal intensity may be about 0. 25% and less of the first signal intensity.

Techniques For Calibration Of Gas Flows

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US Patent:
7757541, Jul 20, 2010
Filed:
Sep 13, 2007
Appl. No.:
11/855052
Inventors:
Joseph R. Monkowski - Danville CA, US
Barton Lane - Pleasanton CA, US
Assignee:
Pivotal Systems Corporation - Pleasanton CA
International Classification:
G01F 25/00
US Classification:
73 134
Abstract:
An embodiment of a method in accordance with the present invention to determine the flow rate of a second gas relative to a first gas, comprises, setting a flow of a first gas to a known level, taking a first measurement of the first gas with a measurement technique sensitive to a concentration of the first gas, and establishing a flow of a second gas mixed with the first gas. A second measurement of the first gas is taken with a measurement technique that is sensitive to the concentration of the first gas, and the flow of the second gas is determined by a calculation involving a difference between the first measurement and the second measurement. In alternative embodiments, the first measurement may be taken of a flow of two or more gases combined, with the second measurement taken with one of the gases removed from the mixture. Certain embodiments of methods of the present invention may be employed in sequence in order to determine flow rates of more than two gases.

End Point Detection Method For Plasma Etching Of Semiconductor Wafers With Low Exposed Area

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US Patent:
7871830, Jan 18, 2011
Filed:
Jan 18, 2006
Appl. No.:
11/335099
Inventors:
Sumer S. Johal - Walnut Creek CA, US
Barton Lane - Pleasanton CA, US
Georges J. Gorin - Novato CA, US
Sylvia G. J. P. Spruytte - Palo Alto CA, US
Herve C. Kieffel - San Francisco CA, US
Assignee:
Pivotal Systems Corporation - Pleasanton CA
International Classification:
H01L 21/302
US Classification:
438 10, 438 9, 438689, 216 59, 216 61, 427 8, 427569
Abstract:
A method for controlling the plasma etching of semiconductor wafers determines the impedance of a plasma chamber using values representing voltage, current, and the phase angle between them, as provided by a sensor. All or less than all of the data during a first time period may be used to calculate a model. During a second time period, real time data is used to calculate a version of the instant impedance of the chamber. This version of impendence is compared to a time-projected version of the model. The method determines that etching should be stopped when the received data deviates from the extrapolated model by a certain amount. In some embodiments a rolling average is used in the second time period, the rolling average compared to the model to determine the end point condition.

Method And Apparatus For Identifying The Chemical Composition Of A Gas

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US Patent:
7940395, May 10, 2011
Filed:
Aug 1, 2008
Appl. No.:
12/184574
Inventors:
Joseph R. Monkowski - Danville CA, US
Barton Lane - Pleasanton CA, US
Assignee:
Pivotal Systems Corporation - Pleasanton CA
International Classification:
G01N 21/00
US Classification:
356437, 356432
Abstract:
Embodiments of the present invention relate to the analysis of the components of one or more gases, for example a gas mixture sampled from a semiconductor manufacturing process such as plasma etching or plasma enhanced chemical vapor deposition (PECVD). Particular embodiments provide sufficient power to a plasma of the sample, to dissociate a large number of the molecules and molecular fragments into individual atoms. With sufficient power (typically a power density of between 3-40 W/cm) delivered into the plasma, most of the emission peaks result from emission of individual atoms, thereby creating spectra conducive to simplifying the identification of the chemical composition of the gases under investigation. Such accurate identification of components of the gas may allow for the precise determination of the stage of the process being performed, and in particular for detection of process endpoint.

Method And Apparatus For Identifying The Chemical Composition Of A Gas

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US Patent:
8237928, Aug 7, 2012
Filed:
Mar 30, 2011
Appl. No.:
13/076409
Inventors:
Joseph R. Monkowski - Danville CA, US
Barton Lane - Pleasanton CA, US
Assignee:
Pivotal Systems Corporation - Pleasanton CA
International Classification:
G01N 21/00
US Classification:
356437, 356436
Abstract:
Embodiments of the present invention relate to the analysis of the components of one or more gases, for example a gas mixture sampled from a semiconductor manufacturing process such as plasma etching or plasma enhanced chemical vapor deposition (PECVD). Particular embodiments provide sufficient power to a plasma of the sample, to dissociate a large number of the molecules and molecular fragments into individual atoms. With sufficient power (typically a power density of between 3-40 W/cm) delivered into the plasma, most of the emission peaks result from emission of individual atoms, thereby creating spectra conducive to simplifying the identification of the chemical composition of the gases under investigation. Such accurate identification of components of the gas may allow for the precise determination of the stage of the process being performed, and in particular for detection of process endpoint.

Method And Apparatus For The Measurement Of Atmospheric Leaks In The Presence Of Chamber Outgassing

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US Patent:
8393197, Mar 12, 2013
Filed:
Jul 24, 2009
Appl. No.:
12/509375
Inventors:
Joseph R. Monkowski - Danville CA, US
Barton Lane - Pleasanton CA, US
Assignee:
Pivotal Systems Corporation - Pleasanton CA
International Classification:
G01M 3/38
G01M 3/40
US Classification:
73 492, 73 405 R, 73 407
Abstract:
Embodiments of the present invention employ measurement of argon as the means to detect the presence of an atmospheric leak in a processing chamber. Argon detected inside the process chamber is conclusive evidence of a leak. Furthermore, the amount of detected argon provides information on the rate of air entering through the leak. In one embodiment, leak detection takes place in the main plasma inside the processing chamber. In another embodiment, leak detection takes place in the self-contained plasma generated in a remote plasma sensor. Additional measurements can be performed, such as measuring the amount of oxygen, and/or the presence of moisture to help in detecting and quantifying outgassing from the processing chamber.
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Barton Akiko Lane from Oakland, CA, age ~82 Get Report